DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. PIN DESCRIPTION 1 base 2 emitter 3 collector 3 age Code: R7p 1 2 Top view MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 20 V VCEO collector-emitter voltage open base - - 15 V IC DC collector current - - 100 mA mW Ptot total power dissipation up to Ts = 70 C; note 1 - - 500 hFE DC current gain IC = 50 mA; VCE = 9 V; Tamb = 25 C 25 80 - fT transition frequency IC = 50 mA; VCE = 9 V; f = 500 MHz; Tamb = 25 C - 5 - GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb = 25 C - 11.5 - dB Vo output voltage IC = 50 mA; VCE = 9 V; RL = 75 ; Tamb = 25 C; dim = -60 dB; f(p+q-r) = 793.25 MHz - 350 - mV MAX. UNIT LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 15 V VEBO emitter-base voltage open collector - 3 V IC DC collector current - 100 mA Ptot total power dissipation - 500 mW Tstg storage temperature -65 150 C Tj junction temperature - 175 C up to Ts = 70 C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point THERMAL RESISTANCE up to Ts = 70 C; note 1 210 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. - - 100 UNIT ICBO collector cut-off current hFE DC current gain IC = 50 mA; VCE = 9 V 25 80 - fT transition frequency IC = 50 mA; VCE = 9 V; f = 500 MHz; Tamb = 25 C - 5 - GHz Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz - 1.5 - pF IE = 0; VCB = 10 V nA Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz - 4.5 - pF Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz - 1.2 - pF GUM maximum unilateral power gain (note 1) IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb = 25 C - 11.5 - dB F noise figure IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb = 25 C - 3.5 - dB d2 second order intermodulation distortion note 2 - -50 - dB Vo output voltage note 3 - 350 - mV Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 G UM S 21 - dB. = 10 log ------------------------------------------------------------2 2 1 - S 11 1 - S 22 2. IC = 30 mA; VCE = 6 V; RL = 75 ; Tamb = 25 C; f(p+q) = 810 MHz; Vo = 100 mV. 3. dim = -60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL = 75 ; Tamb = 25 C; f(p+q-r) = 793.25 MHz. September 1995 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 MBB774 MEA398 - 1 600 1/2 page (Datasheet) 120 handbook, halfpage 22 mm P tot h FE (mW) 400 80 200 40 0 0 0 50 150 100 Ts 0 200 ( o C) 40 80 120 I C (mA) VCE = 9 V; Tamb = 25 C. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. MBB773 8 MEA399 40 handbook, halfpage handbook, halfpage fT (GHz) G UM (dB) 6 30 4 20 2 10 0 0 40 80 I C (mA) 0 120 10 VCE = 9 V; f = 500 MHz; Tj = 25 C. Fig.4 2 103 f (MHz) 10 IC = 30 mA; VCE = 6 V; Tamb = 25 C. Fig.5 Transition frequency as a function of collector current. September 1995 10 4 Maximum unilateral power gain as a function of frequency. 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 1 handbook, full pagewidth 0.5 2 0.2 2000 MHz 1200 1000 +j 0.2 0 -j 5 1500 10 800 0.5 500 1 2 5 10 200 10 100 0.2 5 40 MHz 2 0.5 MEA400 1 IC = 30 mA; VCE = 6 V; Tamb = 25 C. Zo = 50 . Fig.6 Common emitter input reflection coefficient (S11). 90 handbook, full pagewidth 120 150 60 30 40 MHz 100 200 180 50 40 30 20 10 500 800 1000 1200 1500 + 0 2000 MHz - 30 150 60 120 IC = 30 mA; VCE = 6 V; Tamb = 25 C. 90 MEA403 Fig.7 Common emitter forward transmission coefficient (S21). September 1995 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 90 handbook, full pagewidth 120 60 2000 MHz 150 30 1500 1200 1000 800 0.5 180 0.4 0.3 0.2 0.1 + 500 200 100 40 MHz 0 - 30 150 60 120 MEA402 90 IC = 30 mA; VCE = 6 V; Tamb = 25 C. Fig.8 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 5 +j 0 0.2 -j 10 800 MHz 0.5 1 2 5 10 500 10 200 5 0.2 100 2 0.5 IC = 30 mA; VCE = 6 V; Tamb = 25 C. Zo = 50 . 40 MHz 1 MEA401 Fig.9 Common emitter output reflection coefficient (S22). September 1995 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 September 1995 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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