47
SQD300AA100
TRANSISTOR MODULE
UL;E76102 M
Thermal Impedance
(junction to case)
Maximum Ratings Tj 25
Electrical Characteristics Tj 25
Symbol Item Conditions Ratings
SQD300AA100 Unit
VCBO Collector-Base Voltage 1000 V
VCEX Collector-Emitter Voltage VBE 2V 1000 V
Emitter-Base Voltage VVEBO 7
ICCollector Current 300 A
ICReverse Collector Current 300 A
IBBase Current 16 A
PTTotal power dissipation TC25 2000 W
TjJunction Temperature 40 150
Tstg Storage Temperature 40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
Mounting M6
Terminal
M6
Recommended Value 2.5 3.9 25 40 4.7 48
Recommended Value 2.5 3.9 25 40 4.7 48
Terminal
M4 Recommended Value 1.0 1.4 10 14 1.5 15
N m
(fB)
Mass Typical Value 520 g
Unit A
Symbol Item Conditions Ratings
Min. Max.
2.0
800
1000
75
100
2.5
3.5
3.0
15.0
3.0
1.8
0.063
0.3
Unit
ICBO Collector Cut-off Current VCB 1000V mA
IEBO Emitter Cut-off Current VEB 7V mA
V
CEX SUS
hFE
Collector Emitter Sustaning Voltage
Ic 60A IB2 12A
Ic 300A VCE 2.8V
V
DC Current Gain Ic 300A VCE 5V
VCE sat
Collector-Emitter Saturation Voltage
Ic 300A IB6A V
VBE sat
Base-Emitter Saturation Voltage
Ic 300A IB6A V
s
V
/W
ton On Time
Storage Time
Fall Time
ts
tf
Vcc 600V Ic 300A
IB1 6A IB2 6A
Ic 300A
Transistor part
Diode part
VECO
Rth j-c
Switching
Time
Collector-Emitter Reverse Voltage
SQD300AA100 is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
IC300A, VCEX 1000V
Low saturation voltage for higher efficiency.
High DC current gain hFE
Isolated mounting base
Applications
Moter Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
http://store.iiic.cc/
49
SQD300AA120
TRANSISTOR MODULE
UL;E76102 M
Thermal Impedance
(junction to case)
Maximum Ratings Tj 25
Electrical Characteristics Tj 25
Symbol Item Conditions Ratings
SQD300AA120 Unit
VCBO Collector-Base Voltage 1200 V
VCEX Collector-Emitter Voltage VBE 2V 1200 V
Emitter-Base Voltage VVEBO 10
ICCollector Current 300 A
ICReverse Collector Current 300 A
IBBase Current 16 A
PTTotal power dissipation TC25 2000 W
TjJunction Temperature 40 150
Tstg Storage Temperature 40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
M6
Terminal
M6
Recommended Value 2.5 3.9 25 40 4.7 48
Recommended Value 2.5 3.9 25 40 4.7 48
Terminal
M4 Recommended Value 1.0 1.4 10 14 1.5 15
N m
(fB)
Mass Typical Value 470 g
Unit A
Symbol Item Conditions Ratings
Min. Max.
4.0
1200
1200
75
3.0
3.5
3.0
15.0
3.0
1.8
0.063
0.3
Unit
ICBO Collector Cut-off Current VCB 1200V mA
IEBO Emitter Cut-off Current VEB 10V mA
V
CEX SUS
hFE
Collector Emitter Sustaning Voltage
Ic 60A IB2 12A
Ic 300A VCE 5V
V
DC Current Gain
VCE sat
Collector-Emitter Saturation Voltage
Ic 300A IB6A V
VBE sat
Base-Emitter Saturation Voltage
Ic 300A IB6A V
s
V
/W
ton On Time
Storage Time
Fall Time
Transistor part
Dioe part
ts
tf
Vcc 600V Ic 300A
IB1 6A IB2 6A
Ic 300A
VECO
Rth j-c
Switching
Time
Collector-Emitter Reverse Voltage
SQD300AA120 is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
IC300A, VCEX 1200V
Low saturation voltage for higher efficiency.
High DC current gain hFE
Isolated mounting base
Applications
Moter Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
http://store.iiic.cc/
