V
RRM
= 1600 V - 2000 V
I
F
= 380 A
Features
• High Surge Capability DO-9 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
eV
RRM
V
2000
S380Z (R)S380Y (R)
1600
S380Y thru S380ZR
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
y
Diode
Conditions
• Types from 1600 V to 2000 V V
RRM
2. Reverse polarity (R): Stud is anode.
pp g
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
0.16
2000
1414
1.2
S380Z (R)
-55 to 150 -55 to 150
S380Y (R)
1.2
10
12 12
10
I
R
V
F
1131
1600
380
6335
-55 to 150
V
R
= 1600 V, T
j
= 25 °C
I
F
= 380 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
V
R
= 1600 V, T
j
= 175 °C
V
A
-55 to 150
6335
380
0.16
Reverse current
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
S380Y thru S380ZR
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
S380Y thru S380ZR
DO-9 (DO--205AB)
D
H
I
F
B
G
A
E
C
Inches Millimeters
Min Max Min Max
A M 20 * P 1.5
B ----- 1.10 ----- 27.94
C 1.24 1.25 31.5 31.90
D 5.31 5.98 135 152
E 0.78 0.828 19.60 21.03
F 0.470 0.530 11.94 13.46
G ----- 1.122 ----- 28.5
H ----- 0.787 ----- 20.0
I 0.330 0.350 8.38 8.89
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3
