AON7452
100V N-Channel MOSFET
SDMOSTM
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 5.5A
R
DS(ON)
(at V
GS
=10V) < 310m
R
DS(ON)
(at V
GS
=7V) < 370m
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t 10s
Steady-State
Steady-State
R
θJC
Max
T
C
=25°C
3.1
7
T
C
=100°C
°C
Thermal Characteristics Units
Maximum Junction-to-Ambient
A
°C/W
R
θJA
30
60
Parameter Typ 40
V±25Gate-Source Voltage
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
2
Junction and Storage Temperature Range -55 to 150
The AON7452 is fabricated with SDMOS
TM
trench
technology that combines excellent R
DS(ON)
with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
100V
Drain-Source Voltage 100
A
T
A
=25°C I
DSM
A
T
A
=70°C
12Pulsed Drain Current
C
Continuous Drain
Current
Continuous Drain
Current
0.3
2.5
A2.5
I
D
5.5
3.5
T
C
=25°C
T
C
=100°C
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
17
2
T
A
=25°C
Power Dissipation
B
P
D
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
675
7.2
G
D
S
Top View
1
2
3
4
8
7
6
5
DFN 3x3 EP
Top View Bottom View
Pin 1
Rev 1: April 2011 www.aosmd.com Page 1 of 7
AON7452
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 10
T
J
=55°C 50
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 3.3 4 4.7 V
I
D(ON)
12 A
255 310
T
J
=125°C 404 485
296 370 m
g
FS
3.5 S
V
SD
0.8 1 V
I
S
15 A
C
iss
125 155 185 pF
C
oss
20 28 36 pF
C
rss
5 9 13 pF
R
g
123
Q
g
(10V) 2.4 3 4 nC
Q
gs
1 1.3 1.6 nC
Q
gd
0.5 0.9 1.3 nC
t
D(on)
4 ns
t
r
4.5 ns
t
D(off)
8.5 ns
t
f
2 ns
t
rr
6.7 9.6 13 ns
Q
rr
16 23 30 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=2.5A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
Forward Transconductance
Diode Forward Voltage
V
GS
=10V, V
DS
=50V, R
L
=20,
R
GEN
=3
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge V
GS
=10V, V
DS
=50V, I
D
=2.5A
Gate Source Charge
Gate Drain Charge
m
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=2.5A
V
GS
=7V, I
D
=2A
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
V
GS
=10V, I
D
=2.5A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Reverse Transfer Capacitance
I
F
=2.5A, dI/dt=500A/µs
V
GS
=0V, V
DS
=50V, f=1MHz
SWITCHING PARAMETERS
Body Diode Reverse Recovery Time
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 1: April 2011 www.aosmd.com Page 2 of 7
AON7452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
1
2
3
4
5
2345678
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
I
D
(A)
0
200
400
600
800
0123456
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
R
DS(ON)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
25°C
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Temperature C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Normalized On-Resistance
V
GS
=7V
I
D
=2A
V
GS
=10V
I
D
=2.5A
150
200
250
300
350
400
450
500
550
5 6 7 8 9 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(m
)
25°C
V
DS
=5V
V
GS
=7V
V
GS
=10V
I
D
=2.5A
25°C
0
2
4
6
8
10
0 1 2 3 4 5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
I
D
(A)
V
GS
=5.5V
6V
10V
6.5V
7V
Rev 1: April 2011 www.aosmd.com Page 3 of 7
AON7452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3 3.5
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
50
100
150
200
250
0 10 20 30 40 50 60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=50V
I
D
=2.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
R
θJC
=7.2°C/W
Rev 1: April 2011 www.aosmd.com Page 4 of 7
AON7452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
5
10
15
20
0 25 50 75 100 125 150
T
CASE
C)
Figure 12: Power De-rating (Note F)
Power Dissipation (W)
0
1
2
3
4
5
6
0 25 50 75 100 125 150
T
CASE
C)
Figure 13: Current De-rating (Note F)
Current rating I
D
(A)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Power (W)
T
A
=25°C
R
θJA
=75°C/W
Rev 1: April 2011 www.aosmd.com Page 5 of 7
AON7452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
45
02468
I
S
(A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Q
rr
(nC)
0
2
4
6
8
10
12
14
I
rm
(A)
di/dt=500A/µs125ºC
125ºC
25ºC
25ºC
Q
rr
I
rm
0
10
20
30
40
50
300 400 500 600 700
di/dt (A/µ
µµ
µs)
Figure 18: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Q
rr
(nC)
0
5
10
15
20
25
I
rm
(A)
125ºC
125ºC
25ºC
25ºC
I
s
=4A
Q
rr
I
rm
0
4
8
12
16
02468
I
S
(A)
Figure 17: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
t
rr
(ns)
0
0.5
1
1.5
2
2.5
3
S
di/dt=500A/µs125ºC
125ºC
25ºC
25ºC
t
rr
S
0
5
10
15
300 400 500 600 700
di/dt (A/µ
µµ
µs)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
t
rr
(ns)
0
0.5
1
1.5
2
2.5
S
125ºC
25ºC
25ºC
125º
I
s
=4A t
rr
S
Rev 1: April 2011 www.aosmd.com Page 6 of 7
AON7452
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev 1: April 2011 www.aosmd.com Page 7 of 7