© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 9
1Publication Order Number:
TIP41A/D
TIP41, TIP41A, TIP41B,
TIP41C (NPN); TIP42, TIP42A,
TIP42B, TIP42C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
•ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
VCEO 40
60
80
100
Vdc
Collector−Base Voltage TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
VCB 40
60
80
100
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current−Continuous
Peak
IC6.0
10
Adc
Base Current IB2.0 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD65
0.52
W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD2.0
0.016
W
W/°C
Unclamped Inductive Load Energy
(Note 1)
E 62.5 mJ
Operating and Storage Junction,
Temperature Range
TJ, Tstg –65 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.67 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 57 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
6 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40−60−80−100 VOLTS,
65 WATTS
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123
4
TIP4xx = Device Code
xx = 1, 1A, 1B, 1C
2, 2A, 2B, 2C
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
TIP4xxG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) TIP41, TIP42
(IC = 30 mAdc, IB = 0) TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
VCEO(sus) 40
60
80
100
−
−
−
−
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP41, TIP41A, TIP42, TIP42A
(VCE = 60 Vdc, IB = 0) TIP41B, TIP41C, TIP42B, TIP42C
ICEO
−
−
0.7
0.7
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0) TIP41, TIP42
(VCE = 60 Vdc, VEB = 0) TIP41A, TIP42A
(VCE = 80 Vdc, VEB = 0) TIP41B, TIP42B
(VCE = 100 Vdc, VEB = 0) TIP41C, TIP42C
ICES
−
−
−
−
400
400
400
400
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO −1.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE 30
15
−
75
−
Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) VCE(sat) −1.5 Vdc
Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) −2.0 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT3.0 −MHz
Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − −
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device Package Shipping
TIP41 TO−220 50 Units / Rail
TIP41G TO−220
(Pb−Free)
50 Units / Rail
TIP41A TO−220 50 Units / Rail
TIP41AG TO−220
(Pb−Free)
50 Units / Rail
TIP41B TO−220 50 Units / Rail
TIP41BG TO−220
(Pb−Free)
50 Units / Rail
TIP41C TO−220 50 Units / Rail
TIP41CG TO−220
(Pb−Free)
50 Units / Rail
TIP42 TO−220 50 Units / Rail
TIP42G TO−220
(Pb−Free)
50 Units / Rail
TIP42A TO−220 50 Units / Rail
TIP42AG TO−220
(Pb−Free)
50 Units / Rail
TIP42B TO−220 50 Units / Rail
TIP42BG TO−220
(Pb−Free)
50 Units / Rail
TIP42C TO−220 50 Units / Rail
TIP42CG TO−220
(Pb−Free)
50 Units / Rail
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
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3
Figure 1. Power Derating
T, TEMPERATURE (°C)
0 100
0
20
160
40
60
60 80
40 140
80
Figure 2. Switching Time Test Circuit
0.06
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.4 6.0
0.07
1.0
4.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
t, TIME (s)μ
0.5
0.3
0.1
0.05
0.1 0.6 1.0
td @ VBE(off) ≈ 5.0 V
0.03
0.7
2.0
0.2 2.0
tr
20 120
PD, POWER DISSIPATION (WATTS)
TC
TC
0
1.0
2.0
3.0
4.0
TA
TA
+11 V
25 ms
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
0.2
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
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4
t, TIME (ms)
1.0
0.01
0.01
0.1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 1.0 100
ZqJC(t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.02
0.01
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10 205.0 60 100
Figure 5. Active−Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25°C
(SINGLE PULSE)
1.0ms
2.0
1.0
10
5.0
IC, COLLECTOR CURRENT (AMP)
0.5ms
CURVES APPLY BELOW RATED VCEO
3.0
0.3
40 80
5.0ms
TJ = 150°C
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1 0.4 0.6 4.00.06 1.0 2.00.2
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
5.0
t, TIME (s)μ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
6.0 1.0 3.0 5.0 200.5 102.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C, CAPACITANCE (pF)
200
100
70
50
30
30 50
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2 Cib
Cob
3.0
ts
tf
TJ = 25°C
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
103
-0.3
101
100
10-2
102
10-1
10-3
10M
100k
10k
0.1k
1.0M
1.0k
IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
300
500
0.1 0.2 0.4 6.00.06
100
70
50
30
10
7.0
0.3
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 10. “On” Voltages
VCE = 2.0 V
5.0 1.0 2.00.6
1.6
2.0
20 30 100 100010
0.8
0.4
50
0300 500200
25°C
TJ = 150°C
-55°C
1.2
2.0
0.06
IC, COLLECTOR CURRENT (AMP)
1.6
0.8
1.2
0.4
00.1 0.2 0.3 0.4 0.6 1.0
+2.5
IC = 1.0 A
20 60 80 100 120 16014040
V, VOLTAGE (VOLTS)
TJ = 25°C
2.5 A 5.0 A
2.0 3.0 4.0 6.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 10
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+1.0
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
*APPLIES FOR IC/IB ≤ hFE/4
*qVC FOR VCE(sat)
qVB FOR VBE
Figure 11. Temperature Coefficients
, COLLECTOR CURRENT (A)μIC
-0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
IC = ICES
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC ≈ ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
200
20
4.0
0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0
+25°C to +150°C
-55°C to +25°C
+25°C to +150°C
-55°C to +25°C
+0.7
TJ = 25°C
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
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PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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TIP41A/D
PUBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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