CPH5804
No.6980-1/5
Features
•Composite type with a P-Channel Sillicon MOSFET
(MCH3312) and a Schottky Barrier Diode (SBS006M)
contained in one package facilitating high-density
mounting.
[MOSFET]
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V drive.
[SBD]
•Short reverse recovery time.
•Low forward voltage.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6980
CPH5804
Package Dimensions
unit : mm
2171
[CPH5804]
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC / DC Converter Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS --30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID-- 2 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --8 A
Allowable Power Dissipation PD
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
0.9 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V
Average Output Current IO0.5 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Marking : QE
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1.6 0.60.6 2.8
0.2
2.9
0.05
0.40.95
0.2
0.9
0.7
0.15
0.4
12
345
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
62001 TS IM TA-3172
CPH5804
No.6980-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
[MOSFET]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V
Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA
Gate-to-Source Leakage Current IGSS VGSS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--1A 1.4 2.0 S
RDS(on)1 ID=--1A, VGS=--10V 110 145 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--500mA, VGS=--4V 205 290 mΩ
Input Capacitance Ciss VDS=--10V, f=1MHz 200 pF
Output Capacitance Coss VDS=--10V, f=1MHz 47 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 32 pF
Turn-ON Delay Time td(on) See specified Test Circuit 7.2 ns
Rise T ime trSee specified Test Circuit 2.9 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 21 ns
Fall Time tfSee specified Test Circuit 8.7 ns
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2A 5.5 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2A 0.98 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2A 0.82 nC
Diode Forward Voltage VSD IS=--2A, VGS=0 --0.85 --1.5 V
[SBD]
Reverse Voltage VRIR=0.5mA 30 V
Forward Voltage VF1I
F=0.3A 0.35 0.4 V
VF2I
F=0.5A 0.42 0.47 V
Reverse Current IRVR=10V 200 µA
Interterminal Capacitance C VR=10V, f=1MHz, 1 cycle 20 pF
Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns
Electrical Connection (Top view)
Switching Time Test Circuit trr Test Circuit
[MOSFET] [SBD]
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --1A
RL=15Ω
VDD= --15V
VOUT
CPH5804
(MOSFET)
VIN
0V
--10V
VIN
Duty≤10%
50Ω100Ω10Ω
--5V
trr
100mA100mA
10mA
10µs
ASG
CD
G : Gate
S : Source
A : Anode
C : Cathode
D : Drain
CPH5804
No.6980-3/5
--0.1 --1.0
23 57 23 5
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
--5.0
--60 --40 --20 0 20 40 60 80 100 120 140 160
0 --2 --4 --6 --8 --12 --14 --16--10 --18 --20
RDS(on) -- VGS
IT03214
0
0
--0.4
--0.8
--1.6
--2.0
--0.2
--1.2
0
50
100
150
200
250
300
350
400
0
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
ID -- VDS
VGS= --3.0V
--3.5V
--4.0V
--6.0V
--10.0V
IT03212
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5
ID -- VGS
VDS=10V
25°C
--25°C
Ta=75°C
IT03213
RDS(on) -- Ta
IT03215
50
100
150
200
250
300
350
400
0
Ta=25°C
--1.0A
ID= --0.5A
ID= --1.0A, VGS= --10V
ID= --0.5A, VGS= --4V
7
5
3
2
2
10
100
7
5
3
2
1.0
SW Time -- ID
VDD= --15V
VGS= --10V
td(on)
td(off)
tr
tf
IT03218
Ciss, Coss, Crss -- VDS
IT03216
--0.01 --0.1
23 57 23 57 23 57
--1.0 --10
10
1.0
7
5
3
2
0.1
7
5
3
2
yfs -- IDVDS=10V
75°C
25°C
Ta= --25°C
IT03217
--0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2
--0.01
--0.1
--10
--1.0
7
5
3
2
7
5
3
2
7
5
3
2
IF -- VSD VGS=0
--25°C
25°C
Ta=75°C
[MOSFET] [MOSFET]
[MOSFET] [MOSFET]
[MOSFET] [MOSFET]
[MOSFET] [MOSFET]
0 --5 --10 --15 --20 --25 --30
10
100
3
2
7
5
3
2
f=1MHz
Ciss
Coss
Crss
IT03219
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
CPH5804
No.6980-4/5
01234 65
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
VGS -- Qg
VDS= --10V
ID= --2A
IT03220
[MOSFET] [MOSFET]
[MOSFET]
0
020 40
0.2
0.4
0.6
0.8
0.9
1.0
60 80 100 120 140 160
PD -- Ta
IT03222
A S O
2
3
5
7
2
3
5
7
2
3
5
7
--10
--1.0
--0.1
--0.01 --0.1 23 57
--1.0--0.01 23 57 23 57 7
--10 23 5--100
IT03221
IDP= --8A
ID= --2A
Operation in this
area is limited by RDS(on).
100µs
100ms
DC operation
1ms
10ms
<10µs
f=1MHz
[SBD] [SBD]
[SBD] [SBD]
180°
360°
θ
360°
(2)
(3)
(4)
(1)
1.0 10
2
2
3
5
100
1.0
10
7
2
3
5
7
357 2357
100
C -- VR
f=1MHz
0
100
10
1.0
0.1
0.01
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
3015 2552010
IR -- VR
0
00.1 0.2 0.3 0.4
0.40
0.30
0.35
0.25
0.20
0.10
0.05
0.15
0.5 0.6 0.7
PF(AV) -- IO
0
0.1
0.01 0.80.4 1.00.2
1.0
10
7
5
3
2
7
5
3
2
7
5
3
2
0.6
IF -- VF
Ta=125°C
25°C
100°C
Ta=125°C
25°C
50°C
75°C
100°C
IT00632 IT00633
IT00634 IT00635
50°C
75°C
Ta=25°C
Single pulse
Mounted on a ceramic board(600mm
2
✕0.8mm) 1unit
Mounted on a ceramic board(600mm
2
✕0.8mm) 1unit
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
Rectangular wave
Sine wave
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Rev erse Voltage, VR -- V
Interterminal Capacitance, C -- pF
Rev erse Voltage, VR -- V
Reverse Current, IR -- mA
Average Forward Current, IO -- A
Average Forward Power Dissipation, PF(AV) -- W
Forward Voltage, VF -- V
Forward Current, IF -- A
CPH5804
No.6980-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.
PS
IS
20ms
t
70.01 23 7
0.1
052 237
1.0
5
12
10
8
6
4
2
3
IS -- t
IT00636
[SBD]
Time, t -- s
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
