2SC5226A Ordering number : ENA1062A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features * * * Low-noise : NF=1.0dB typ (f=1GHz) High gain : S21e2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Conditions Ratings 20 V 10 V VEBO IC 2 V 70 mA 150 mW Junction Temperature PC Tj Storage Temperature Tstg 150 C --55 to +150 C Product & Package Information unit : mm (typ) 7023A-009 * Package : MCP * JEITA, JEDEC : SC-70, SOT-323 * Minimum Packing Quantity : 3,000 pcs./reel 0.425 2SC5226A-4-TL-E 2SC5226A-5-TL-E Packing Type: TL Marking 0 to 0.08 1.25 2.1 0.15 3 0.2 Package Dimensions 2.0 LOT No. 1 2 0.65 R A N K LOT No. TL 0.3 Electrical Connection 0.3 0.425 LN 0.9 Unit VCBO VCEO 1 : Base 2 : Emitter 3 : Collector SANYO : MCP 3 1 2 http://semicon.sanyo.com/en/network 71812 TKIM/51408AB TIIM TC-00001340 No. A1062-1/8 2SC5226A Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=10V, IE=0A VEB=1V, IC=0A Gain-Bandwidth Product hFE fT VCE=5V, IC=20mA VCE=5V, IC=20mA Output Capacitance Cob Reverse Transfer Capacitance Cre Emitter Cutoff Current DC Current Gain Forward Transfer Gain Noise Figure Ratings Conditions min typ Unit max 60* 1.0 A 10 A 270* 5 7 GHz 0.75 VCB=10V, f=1MHz 1.2 0.5 pF pF 2 S21e 1 VCE=5V, IC=20mA, f=1GHz 12 dB 2 S21e 2 VCE=2V, IC=3mA, f=1GHz 8 dB NF VCE=5V, IC=7mA, f=1GHz 1.0 9 1.8 dB * : The 2SC5226A is classified by 20mA hFE as follows : Rank hFE 3 60 to 120 4 90 to 180 5 135 to 270 Ordering Information Package Shipping 2SC5226A-4-TL-E Device MCP 3,000pcs./reel 2SC5226A-5-TL-E MCP 3,000pcs./reel hFE -- IC 3 memo Pb Free fT -- IC 2 VCE=5V VCE=5V Gain-Bandwidth Product, fT -- GHz DC Current Gain, hFE 2 100 7 5 3 2 10 3 5 7 1.0 3 2 5 7 10 2 5 3 Collector Current, IC -- mA 3 2 1.0 1.0 7 5 3 2 0.1 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 1.0 2 3 5 3 ITR07921 7 2 10 3 5 Collector Current, IC -- mA Reverse Transfer Capacitance, Cre -- pF f=1MHz 7 7 7 100 2 ITR07920 Cre -- VCB 3 2 Output Capacitance, Cre -- pF 5 5 2 7 100 ITR07919 Cob -- VCB 3 5 7 7 7 5 10 f=1MHz 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 3 ITR07922 No. A1062-2/8 2SC5226A S21e2 -- IC 12 VCE=5V f=1GHz V CE 8 =2 V V Noise Figure, NF -- dB 10 10 6 4 8 6 4 2 2 0 NF -- IC 12 f=1GHz V CE = 5 Forward Transfer Gain,S21e2 -- dB 14 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 2 ITR07924 PC -- Ta 160 0 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 2 ITR07923 Collector Dissipation, PC -- mW 150 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR07925 No. A1062-3/8 2SC5226A f=100MHz, 200MHz to 2000MHz(200MHz Step) f=100MHz, 200MHz to 2000MHz(200MHz Step) 120 j25 j100 j150 10 0 VCE=2V IC=3mA --j10 50 100 VCE=5V IC=20mA 0.1GHz 150 250 180 --j250 --j200 --j150 0.1GHz --j100 0 --90 ITR07927 f=100MHz, 200MHz to 2000MHz(200MHz Step) j50 2.0GHz 60 2.0GHz j25 j100 2.0GHz VCE=2V 30 IC=3mA VCE=5V IC=7mA 0.1GHz 0.1GHz 0.04 0.08 0.12 0.16 0.2 0 0.1GHz 180 16 20 --60 --120 f=100MHz, 200MHz to 2000MHz(200MHz Step) 150 12 --30 ITR07926 VCE=5V IC=20mA 30 --150 --j50 90 60 VCE=5V IC=7mA 0.1GHz --j25 120 VCE=5V IC=20mA VCE=2V 0.1GHz I =3mA C 0.1GHz 2.0GHz 2.0GHz 8 2.0GHz 4 2.0GHz 2.0GHz 25 VCE =5V IC =7mA 150 j200 j250 j10 2.0GHz 90 0.1GH z j50 j150 j200 j250 j10 0 10 50 100 150 VCE=5V 2.0GHz VCE=5V IC=20mA IC=7mA 2.0GHz 2.0GHz V =2V CE IC=3mA --j10 --30 --150 25 250 --j250 --j200 --j150 --j100 --j25 --60 --120 --90 ITR07928 --j50 ITR07929 No. A1062-4/8 2SC5226A S Parameters (Common emitter) VCE=5V, IC=7mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.720 0.612 0.497 0.456 0.440 0.436 0.434 0.433 0.433 0.434 0.439 S11 -46.0 -80.9 -121.3 -143.5 -157.6 -167.5 -176.1 176.6 170.9 165.0 159.6 S21 17.973 13.927 8.656 6.080 4.725 3.864 3.258 2.847 2.329 2.252 2.057 S21 148.5 127.3 105.0 92.8 84.3 77.0 70.3 64.5 57.4 54.2 49.2 S12 0.030 0.047 0.066 0.079 0.094 0.110 0.126 0.143 0.160 0.178 0.197 S12 68.5 57.1 51.3 52.9 55.4 56.8 57.9 58.4 58.9 58.6 58.1 S22 0.880 0.697 0.479 0.382 0.339 0.323 0.312 0.304 0.296 0.293 0.294 S22 -23.6 -37.6 -47.6 -50.5 -51.8 -53.4 -55.8 -58.3 -62.0 -65.0 -68.1 S11 -78.8 -119.2 -151.6 -166.4 -175.9 178.2 172.1 166.7 162.1 156.7 152.1 S21 29.795 19.008 10.416 7.084 5.407 4.401 3.701 3.217 2.839 2.534 2.319 S21 132.9 112.2 95.4 86.6 80.1 74.1 68.5 63.6 58.8 54.3 50.1 S12 0.022 0.033 0.052 0.071 0.092 0.114 0.134 0.156 0.176 0.197 0.219 S12 63.9 60.8 64.7 67.2 68.4 67.8 66.8 65.6 64.0 62.4 60.6 S22 0.707 0.470 0.296 0.236 0.213 0.208 0.204 0.202 0.199 0.197 0.197 S22 -38.2 -51.1 -55.3 -56.1 -56.6 -57.9 -60.7 -63.5 -67.9 -71.2 -74.2 S11 -32.4 -60.7 -101.1 -126.5 -143.7 -156.3 -166.8 -175.5 177.0 170.3 163.8 S21 9.413 8.187 5.855 4.337 3.444 2.871 2.446 2.145 1.904 1.714 1.564 S21 157.2 138.5 113.8 98.4 87.7 78.5 70.5 63.5 57.1 51.7 45.9 S12 0.040 0.070 0.101 0.114 0.122 0.130 0.137 0.146 0.155 0.168 0.183 S12 72.6 59.2 44.5 39.1 38.0 38.6 40.3 42.5 45.0 47.3 49.2 S22 0.945 0.833 0.637 0.515 0.454 0.426 0.407 0.393 0.382 0.379 0.378 S22 -16.5 -29.3 -43.2 -50.0 -53.8 -57.1 -60.3 -63.8 -68.0 -72.0 -75.8 VCE=5V, IC=20mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.481 0.420 0.391 0.386 0.381 0.382 0.385 0.388 0.390 0.391 0.394 VCE=2V, IC=3mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.858 0.782 0.653 0.588 0.557 0.543 0.536 0.533 0.527 0.525 0.528 No. A1062-5/8 2SC5226A Embossed Taping Specification 2SC5226A-4-TL-E, 2SC5226A-5-TL-E No. A1062-6/8 2SC5226A Outline Drawing 2SC5226A-4-TL-E, 2SC5226A-5-TL-E Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No. A1062-7/8 2SC5226A Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2012. Specifications and information herein are subject to change without notice. PS No. A1062-8/8