SEMITOP®3
Mosfet Module
SK 260MAR10
Preliminary Data
Features
!
"
Typical Applications
#
$ $
%&"
1) ' & (
( *+,
MAR
Absolute Maximum Ratings - .+ ,(
Symbol Conditions Values Units
MOSFET
/"" 011 /
/2"" 3.1 /
4 - .+ *1 ,5 0 .61 0*1 7
4' 8 0 5 - .+ *1 ,5 0 9:1 6:1 7
;<91===>0+1 ,
Inverse diode
4?-<4 - .+ *1 ,5 .61 0*1 7
4?' -<4' 8 0 5 - .+ *1 ,5 9:1 6:1 7
;<91===>0+1 ,
Freewheeling CAL diode
4?-<4 - *1 , @+ 7
;<91===>0.+ ,
< 91 === > 0.+ ,
( 01 .:1 ,
/ 7+1A( 0 0 .+11 B 6111 /
Characteristics - .+ ,(
Symbol Conditions min. typ. max. Units
MOSFET
/C"" /2" -1/(4- 1(D+ 7 E /"" /
/2" /2" - /"5 4- 1(D+ 7 .(+ 6(6 /
4"" /2" -1/5/" - /""5 ;- .+ 0.+ , 011 +11 F7
42"" /2" - .1/ 5/" - 1 / 011 7
C" 4- 611 75 /2" - 01 /5 ;- .+ , .(+ G
C" 4- 611 75 /2" - 01 /5 ;- 0.+ , 6(+ 9(+ G
'"?H ?
I .D(: ?
/2" -1/5/" - .+ /5 - 0 'A .(@ ?
.(* ?
#"
I 901
/ - +1 /5 /2" - 01 /5
4- *+ 7
9+1
C2- 6(6 G 09@1
961
C;< '"?H 1(9+ JBK
Inverse diode
/" 4?- 611 75 /2" -1/5 ;- .+ , 1(D: /
4CC' I 7
L 4?- 611 75 $; - ,5 C2- G F
/C- 75 B - 7BF
Free-wheeling diode
/?4?- 0+1 75 /2" - 1 / 0(9+ 0(D /
4CC' I @1 7
L 4?- 0+1 75 $; - 0.+ , @(@ F
/- 611 75 B - <*11 7BF
Mechanical data
'0 M .(+ N
61
"H'4 &O6 90
SK 260MAR10
1 11-04-2005 RAM © by SEMIKRON
Fig. 3 Output characteristic, tp= 80 µs, Tj= 25 °C
Fig. 5 Breakdown voltage vs. temperature Fig. 6 Typ. capacitancies vs. drain-source voltage
Fig. 7 Gate charge characteristic, IDp = 300 A Fig. 8 Diode forward characteristic, tp= 80 µs
SK 260MAR10
2 11-04-2005 RAM © by SEMIKRON
Dimensions in mm
"%22H" H #H47'H HC ?C H "#HC &4N" 7N H '%N 4N2 &4N" 4N H &I .
90
'7C
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SK 260MAR10
3 11-04-2005 RAM © by SEMIKRON
