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MRF18060ALR3 MRF18060ALSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications. Specified for GSM 1805 -- 1880 MHz.
!Typical GSM Performance, Full Frequency Band (1805 -- 1880 MHz)
Power Gain 13 dB @ 60 Watts
Efficiency 45% @ 60 Watts
!Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW
Output Power
Features
!Internally Matched for Ease of Use
!High Gain, High Efficiency and High Linearity
!Integrated ESD Protection
!Designed for Maximum Gain and Insertion Phase Flatness
!Excellent Thermal Stability
!Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40"# Nominal.
!RoHS Compliant
!In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --0.5, +15 Vdc
Total Device Dissipation @ TC$25%C
Derate above 25%C
PD180
1.03
W
W/%C
Storage Temperature Range Tstg -- 65 to +150 %C
Case Operating Temperature TC150 %C
Operating Junction Temperature TJ200 %C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R&JC 0.97 %C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 2 (Minimum)
Machine Model M3 (Minimum)
Document Number: MRF18060A
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
MRF18060ALR3
MRF18060ALSR3
1805--1880 MHz, 60 W, 26 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF18060ALR3
CASE 465A--06, STYLE 1
NI--780S
MRF18060ALSR3
'Freescale Semiconductor, Inc., 2006, 2010.
A
ll rights reserved.
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RF Device Data
Freescale Semiconductor
MRF18060ALR3 MRF18060ALSR3
Table 4. Electrical Characteristics (TC=25%C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D=10"Adc)
V(BR)DSS 65 Vdc
Zero Gate Voltage Drain Current
(VDS =26Vdc,V
GS =0Vdc)
IDSS 6 "Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS 1 "Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 300 "Adc)
VGS(th) 2 4 Vdc
Gate Quiescent Voltage
(VDS =26Vdc,I
D= 500 mAdc)
VGS(Q) 2.5 3.9 4.5 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2Adc)
VDS(on) 0.27 Vdc
Dynamic Characteristics
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS =26Vdc(30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Ciss 160 pF
Output Capacitance (1)
(VDS =26Vdc(30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss 740 pF
Reverse Transfer Capacitance
(VDS =26Vdc(30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss 2.7 pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Common--Source Amplifier Power Gain @ 60 W (2)
(VDD =26Vdc,I
DQ = 500 mA, f = 1805 -- 1880 MHz)
Gps
11.5 13
dB
Drain Efficiency @ 60 W (2)
(VDD =26Vdc,I
DQ = 500 mA, f = 1805 -- 1880 MHz)
)
43 45
%
Input Return Loss (2)
(VDD =26Vdc,P
out =60WCW,I
DQ = 500 mA,
f = 1805 -- 1880 MHz)
IRL -- 1 0 dB
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring
batch--to--batch consistency.
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MRF18060ALR3 MRF18060ALSR3
3
RF Device Data
Freescale Semiconductor
RF
INPUT
RF
OUTPUT
Z1
VBIAS
C6
C7
C1
Z3
DUT
VSUPPLY
Z4 Z5
C1 100 nF Chip Capacitor (1203)
C2, C4, C7 10 pF Chip Capacitors
C3 10 mF, 35 V Electrolytic Tantalum Capacitor
C5 1.2 pF Chip Capacitor
C6 1.0 pF Chip Capacitor
R1, R3 2.2 k*Chip Resistors (0805)
R2, R4 2.7 k*Chip Resistors (0805)
R5 1.1 k*Chip Resistor (0805)
T1 BC847 Transistor SOT--23
Z1 0.47#x0.09#Microstrip
Z2 1.16#x0.09#Microstrip
Z3 0.57#x0.95#Microstrip
Z4 0.59#x1.18#Microstrip
Z5 1.26#x0.15#Microstrip
Z6 1.15#x0.09#Microstrip
Z7 0.37#x0.09#Microstrip
C5
Z7
R4
C2
R5
C3
C4 +
Z2
R3
R1
R2
T1 Z6
VBIAS
Ground Ground
VSUPPLY
C7
C4
C3
R5
C2
C1
R4R3
R2
R1
C5
C6
T1
Figure 1. 1805 -- 1880 MHz Test Fixture Schematic
Figure 2. 1805 -- 1880 MHz Test Fixture Component Layout
MRF18060
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
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RF Device Data
Freescale Semiconductor
MRF18060ALR3 MRF18060ALSR3
C4
VSUPPLY
C3
C1
R1
R2
R5
R6
R3
R4
Z5
T1
T2
C5
C2
VBIAS
Z4
RF
INPUT
RF
OUTPUT
Z1
C7 C8
Z3 Z6
C6
Z7
+
Z2
Figure 3. 1800 -- 2000 MHz Demo Board Schematic
C1 1 mF Chip Capacitor (0805)
C2 100 nF Chip Capacitor (0805)
C3, C5, C8 10 pF Chip Capacitors, ACCU--P (0805)
C4 10 mF, 35 V Tantalum Electrolytic Capacitor
C6 1.8 pF Chip Capacitor, ACCU--P (0805)
C7 1 pF Chip Capacitor, ACCU--P (0805)
R1 10 *Chip Resistor (0805)
R2, R6 1 k*Chip Resistors (0805)
R3 1.2 k*Chip Resistor (0805)
R4 2.2 k*Chip Resistor (0805)
R5 5 k*, SMD Potentiometer
T1 LP2951 Micro--8 Voltage Regulator
T2 BC847 SOT--23 NPN Transistor
Z1 0.159#x 0.055#Microstrip
Z2 0.982#x 0.055#Microstrip
Z3 0.087#x 0.055#Microstrip
Z4 0.512#x 0.787#Microstrip
Z5 0.433#x 1.220#Microstrip
Z6 1.039#x0.118#Microstrip
Z7 0.268#x 0.055#Microstrip
Substrate = 0.5 mm Teflon+Glass, ,r=2.55
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MRF18060ALR3 MRF18060ALSR3
5
RF Device Data
Freescale Semiconductor
T2
R4
VSUPPLY
Ground
C6
C4
C7 C8
C5
R6
C2
C1
R1
T1
R2
R3
R5
VBIAS
Figure 4. 1800 -- 2000 MHz Demo Board Component Layout
C3
MRF18060
MRF18060
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
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6
RF Device Data
Freescale Semiconductor
MRF18060ALR3 MRF18060ALSR3
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
IRL
Pin =6W
Figure 5. Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS)
8
10
Figure 6. Output Power versus Supply Voltage
0
VDD, SUPPLY VOLTAGE (VOLTS)
100
10
40
Gps, POWER GAIN (dB)
181
P
Figure 7. Output Power versus Frequency
90
f, FREQUENCY (MHz)
0
Figure 8. Output Power and Efficiency
versus Input Power
Pin, INPUT POWER (WATTS)
20
1800
10
0
15
1
90
20
30
30
20
1900
60
100 3022
50
40
10
30
0
2
50
70
1820
Figure 9. Wideband Gain and IRL
(at Small Signal)
15.0
f, FREQUENCY (MHz)
10.0
1700
10.5
12.0
12.5
2100
14.5
14.0
19001800 2000
10
9
13
16
14
500 mA
300 mA
100 mA
IDQ = 750 mA
26
1840 3 4 5 6
60
50
40
20
15
η
VDD =26Vdc
f = 1880 MHz
11
12
2820 24
80
90
, OUTPUT POWER (WATTS)
out
2.5 W
Pin =5W
VDD =26Vdc
IDQ = 500 mA
1W
P , OUTPUT POWER (WATTS)
out
1860 1880
60
80
70
VDD =26Vdc
IDQ = 500 mA
1W
0.5 W
3W
50
40
60
70
80
P , OUTPUT POWER (WATTS)
out
25
30
Pout
VDD =26Vdc
IDQ = 500 mA
f = 1880 MHz
13.5
13.0
Gps, POWER GAIN (dB)
0
-- 1 0
-- 1 2
-- 1 8
-- 2 0
-- 1 6
-- 1 4
-- 2
-- 4
-- 6
-- 8
VDD =26Vdc
IDQ = 500 mA
Gps
35
45
55
11.0
11.5
IRL, INPUT RETURN LOSS (dB)
, DRAIN EFFICIENCY (%))
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7
RF Device Data
Freescale Semiconductor
f
MHz
Zsource
*
Zload
*
1700
1800
1900
0.60 -- j2.53
0.92 -- j3.42
0.80 -- j3.20
2.27 -- j3.44
2.05 -- j3.05
1.90 -- j2.90
VDD =26V,I
DQ = 500 mA, Pout =60WCW
2000
2100 1.31 -- j4.00
1.07 -- j3.59 1.64 -- j2.88
1.29 -- j2.99
Figure 10. Series Equivalent Source and Load Impedance
f = 1700 MHz
f = 2100 MHz
Zo=5*
f = 1700 MHz
f = 2100 MHz
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource
Zload
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RF Device Data
Freescale Semiconductor
MRF18060ALR3 MRF18060ALSR3
NOTES
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9
RF Device Data
Freescale Semiconductor
NOTES
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RF Device Data
Freescale Semiconductor
MRF18060ALR3 MRF18060ALSR3
NOTES
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MRF18060ALR3 MRF18060ALSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465--06
ISSUE G
NI--780
MRF18060ALR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.772 0.788 19.60 20.00
Q.118 .138 3.00 3.51
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S0.365 0.375 9.27 9.52
M0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
CASE 465A--06
ISSUE H
NI--780S
MRF18060ALSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.805 0.815 20.45 20.70
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
M0.774 0.786 19.61 20.02
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S0.365 0.375 9.27 9.52
N0.772 0.788 19.61 20.02
U-- -- -- 0 . 0 4 0 -- -- -- 1 . 0 2
Z-- -- -- 0 . 0 3 0 -- -- -- 0 . 7 6
M
A
M
bbb B M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
R(LID)
S(INSULATOR)
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RF Device Data
Freescale Semiconductor
MRF18060ALR3 MRF18060ALSR3
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
9Dec. 2010 !MRF18060A Rev. 9 data sheet archived. Data sheet split due to change in part life cycle. See
MRF18060A--1 Rev. 10 for MRF18060ALSR3 and MRF18060A--2 Rev. 11 for MRF18030ALR3.
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13
RF Device Data
Freescale Semiconductor
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Document Number: MRF18060A
Rev. 9, 5/2006