
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Diode SD106WS
Document number: BL/SSSDB026 www.galaxycn.com
Rev.A 1
FEATURES Pb
Lead-free
z Low turn-on voltage.
z Fast switching.
z This device is protected by a PN junction guard ring against
excessive voltage,such as electrostatic discharge.
z Ideal for precaution of MOS device ,steering ,biasing ,
and coupling diodes for fast switching and
low logic level application.
z Microminiature plastic package. SOD-323
APPLICATIONS
z High speed switching
ORDERING INFORMATION
Type No. Marking Package Code
SD106WS S21 SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter Symbol Limits Unit
Non-Repetitive Peak reverse voltage VRM 30 V
Peak forward Current IFM 200 mA
Forward surge current tp=10ms IFSM 1 A
Power dissipation Ptot 250 mW
Thermal resistance junction to ambient air TθjA 500 ℃/W
Junction temperature Tj150 ℃
Storage temperature TSTG -65~+150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified