Radar Pulsed Power Transistor, 300 Watts,
1.20-1.40 GHz, 150 µS Pulse, 10% Duty
Features
QNPN Silicon Microwave Power Transistor
QCommon Base Configuration
QBroadband Class C Operation
QHigh Efficiency Interdigitated Geometry
QGold Metalization System
QInternal Input and Output Impedance Matching
QHermetic Metal/Ceramic Package
PH1214-300M
Outline Drawing
12/06/01
Electrical Characteristics @ 25 °C
Parameter Symbol Min. Max. Units Test Conditions
Collector-Emitter Breakdown
Voltage
BVCES 90 - V IC=80 mA
Collector-Emitter Leakage
Current
ICES - 10 mA VCE=40 V
Thermal Resistance RTH(JC) - .25 °C/W VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Output Power PO 300 - W VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Power Gain GP 8.75 - dB VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Collector Efficiency η 50 - % VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Input Return Loss RL 10 - dB VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Load Mismatch Tolerance VSWR-T - 2:1 - VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Load Mismatch Stability VSWR-S - 1.5:1 - VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Rev. 0
Absolute Maximum Ratings @ 25 °C
Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 90 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 21.0 A
Total Power Dissipation
@ +45 °C
PTOT 620 W
Storage Temperature TSTG -65 to +200 °C
Junction Temperature Tj 200 °C
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty PH1214-300M
12/06/01
Rev. 0
Sample Test Data
(Broadband test fixture matched to 50 Ω.)
2
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
∆Gain
(dB)
Eff.
(%) Ic (A) Droop
(dB)
P1dB Overdrive VSWR-S
Pout
(W)
∆ Po
(dB)
Gain
(dB)
Droop
(dB)
Eff.
(%) 1.5:1 2:1 2.5:1
1.2 40 406 10.06
0.82
63.2 16.1 0.1 18 451 0.46 9.52 0.38 59.8 S S S
1.3 40 355 9.48 59.3 15 0.04 15 412 0.65 9.12 0.32 58.2 S S S
1.4 40 335.8 9.24 58.4 14.4 0.06 16 378 0.51 8.75 0.35 56 S S S
RL
(dB)
Note: ∆Po(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 40W.
PH1214-300M Pout vs. Pin
0
100
200
300
400
500
0 102030405060
Pin (W)
Pout (W)
1.2 GHz
1.3 GHz
1.4 GHz
Power Output Curves
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty PH1214-300M
12/06/01
Rev. 0
3
Test Fixture Impedances
Test Fixture Circuit Dimensions
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty PH1214-300M
12/06/01
Rev. 0
Specifications subject to change without notice.
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
4
Test Fixture Assembly
