DSEI2x101-06A
Low Loss and Soft Recovery
Fast Recovery Epitaxial Diode
Parallel legs
FRED
2
3
1
4
Part number
DSEI2x101-06A
Backside: isolated
FAV
rr
tns35
RRM
96
600
=
V= V
I= A
2x
Features / A dvantages: Applications: Package:
● Planar passivated chips
● Low leakage current
● Short recovery time
● Improved thermal behaviour
● Low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
IXYS reserves the right to change limits, conditions and dimensions. 20130703bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-06A
n
s
27
A
T
VJ
=°C
reverse recovery time
A
40
80
150
n
s
I
RM
max. reverse recovery current
I
F
=A;100
25
T=100°C
VJ
-di
F
=A/µs600/dtt
rr
V
R
=V300
T
VJ
=°C25
T=100°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.25
R0.5 K/
W
R
min.
96
V
RSM
V
3T = 25°C
VJ
T = °C
VJ
m
A
20V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
70
P
tot
250
W
T = 25°C
C
RK/
W
100
480
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.40
T = 25°C
VJ
125
V
F0
V
0.70T = °C
VJ
150
r
F
4.7 m
Ω
V
1.17T = °C
VJ
I = A
F
V
100
1.70
I = A
F
200
I = A
F
200
threshold voltage
slope resistance for power loss calculation only
m
A
150
V
RRM
V
600
max. re pe titiv e re verse b locki n g v ol tage T = 25°C
VJ
C
J
107
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
150
1.20 k
A
600
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
600
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20130703bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-06A
Ratings
abcde
YYWWZ XXXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
Assembly Line
Package
T
VJ
°C
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temperatu re
Unit
M
T
Nm1.5
terminal torque 1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 150 A
per terminal
150-40
terminal to terminal
SOT-227B
(
minibloc
)
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSEI2x101-06A 468029Tube 10DSEI2x101-06AStandard
2500
3000
ISOL
threshold voltage V0.7
mΩ
V
0 max
R
0 max
slope resistance * 3.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130703bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-06A
2
3
1
4
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20130703bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSEI2x101-06A
200 600 10000 400 800
120
140
160
180
200
220
240
260
0.001 0.01 0.1 1 10
0.1
1
0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
0 200 400 600 800 1000
10
30
50
0
20
40
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
200 600 10000 400 800
10
30
50
70
0
20
40
60
80
0001001
0
1
2
3
4
5
6
7
0.0 0.5 1.0 1.5
0
25
50
75
100
125
150
0.1
0.2
0.3
0.05
t[s]
I
F
[A]
-di
F
/dt [A/μs]V
F
[V]
Q
r
[μC]
-di
F
/dt [A/μs]
I
RM
[A]
-di
F
/dt [A/μs] -di
F
/dt [A/μs]
V
FR
[V]
t
rr
[ns]
t
fr
[μs]
V
FR
TVJ [°C]
Kf
ZthJC
[K/W]
I
RM
Q
rr
Fig. 1 Forward current
IFversus VF
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF/dt
Fig. 3 Typ. peak reverse current
IRM versus -diF/dt
Fig. 4 Typ. dyn. parameters
Qr,I
RM versus TVJ
Fig. 5 Typ. recovery time
trr versus -diF/dt
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
Fi
g
. 7 Transient thermal impedance
j
unction to case
Constants for ZthJC calculation:
iR
thi ti
[K/W] [s]
1 0.020 0.00002
2 0.020 0.00081
3 0.076 0.01
4 0.240 0.94
5 0.114 0.45
T
VJ
= 150°C
100°C
25°C
I
F
=200A
100 A
50 A
T
VJ
= 100°C
V
R
= 300 V
I
F
= 200 A
100 A
50 A
T
VJ
=100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V T
VJ
= 100°C
V
R
=300 V
I
F
= 200 A
100 A
50 A t
fr
D=0.7
0.5
0.05
Single Pulse
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20130703bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved