© Semiconductor Components Industries, LLC, 2018
April, 2018 − Rev. P0 1Publication Order Number:
NVBLS0D5N04M8/D
NVBLS0D5N04M8
Product Preview
Power MOSFET
40 V, 300 A, 0.57 mW, Single N−Channel
Features
•Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A
•Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A
•UIS Capability
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS TJ = 25°C unless otherwise noted
Parameter Symbol Ratings Units
Drain−to−Source Voltage VDSS 40 V
Gate−to−Source Voltage VGS ±20 V
Drain Current − Continuous (VGS = 10)
(Note 1) TC = 25°CID300 A
Pulsed Drain Current TC = 25°C See
Figure 4
Single Pulse Avalanche Energy (Note 2) EAS 1064 mJ
Power Dissipation PD429 W
Derate Above 25°C 2.86 W/°C
Operating and Storage Temperature TJ, TSTG −55 to +175 °C
Thermal Resistance, Junction−to−Case RqJC 0.35 °C/W
Maximum Thermal Resistance,
Junction−to−Ambient (Note 3) RqJA 43 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Current is limited by bondwire configuration.
2. Starting T J = 25°C, L = 0.3 mH, IAS = 84 A, VDD = 40 V during inductor charging
and VDD = 0 V during time in avalanche.
3. RqJA is the sum of the junction−to−case and case−to−ambient thermal
resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA
is determined by the board design. The maximum rating presented here is
based on mounting on a 1 in2 pad of 2 oz copper.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
Device Package Marking
ORDERING INFORMATION
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NVBLS0D5N04M8TXG MO−299A
(Pb−Free) 0D5N04M8
MO−299A
CASE 100CU
S (2−8)
G (1)
D (9)
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Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain−to−Source Breakdown Voltage ID = 250 mA, VGS = 0 V 40 − − V
IDSS Drain−to−Source Leakage Current VDS = 40 V,
VGS = 0 V TJ = 25°C − − 1 mA
TJ = 175°C (Note 4) − − 1 mA
IGSS Gate−to−Source Leakage Current VGS = ±20 V − − ±100 nA
ON CHARACTERISTICS
VGS(th) Gate−to−Source Threshold Voltage VGS = VDS, ID = 250 mA2.0 3.0 4.0 V
RDS(on) Drain−to−Source On Resistance ID = 80 A, VGS = 10 V TJ = 25°C − 0.46 0.57 mW
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz − 15900 − pF
Coss Output Capacitance − 4000 − pF
Crss Reverse Transfer Capacitance − 600 − pF
RgGate Resistance f = 1 MHz − 2.6 − W
Qg(ToT) Total Gate Charge at 10 V VGS = 0 to 10 V VDD = 20 V
ID = 80 A − 220 296 nC
Qg(th) Threshold Gate Charge VGS = 0 to 2 V − 29 39 nC
Qgs Gate−to−Source Gate Charge − 73 − nC
Qgd Gate−to−Drain “Miller” Charge − 41 − nC
SWITCHING CHARACTERISTICS
ton T urn−On Time VDD = 20 V, ID = 80 A,
VGS = 10 V, RGEN = 6 W− − 221 ns
td(on) T urn−On Delay − 54 − ns
trRise Time − 82 − ns
td(off) Turn−Off Delay − 106 − ns
tfFall Time − 52 − ns
toff Turn−Off Time − − 215 ns
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD Source−to−Drain Diode Voltage ISD = 80 A, VGS = 0 V − − 1.25 V
ISD = 40 A, VGS = 0 V − − 1.2 V
trr Reverse−Recovery Time IF = 80 A, dISD/dt = 100 A/ms,
VDD = 32 V −119 133 ns
Qrr Reverse−Recovery Charge − 228 274 nC
4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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Typical Characteristics
Figure 1. Normalized Power Dissipation vs. Case
Temperature
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
POWER DISSIPATION MULTIPLIER
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
25 50 75 100 125 150 175 200
0
100
200
300
400
500
600
700
CURRENT LIMITED
BY SILICON
CURRENT LIMITED
BY PACKAGE VGS = 10V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE(oC)
Figure 3.
10−5 10−4 10−3 10−2 10−1 100101
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
NORMALIZED THERMAL
IMPEDANCE, ZqJC
t, RECTANGULAR PULSE DURATION(s)
DUTY CYCLE − DESCENDING ORDE R
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZqJA x RqJA + TC
PDM
t1t2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10−5 10−4 10−3 10−2 10−1 100101
100
1000
10000 VGS = 10V
SINGLE PULSE
IDM, PEAK CURRENT (A)
t, RECTANGULAR PULSE DURATION(s)
TC = 25oC
I = I2175 − TC
150
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
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Figure 5.
0.1 1 10 100 200
0.1
1
10
100
1000
2000
100us
1ms
10ms
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
100ms
Forward Bias Safe Operating Area
0.001 0.01 0.1 1 10 100 1000 10000
1
10
100
1000
10000
STARTING TJ = 150oC
STARTING TJ = 25oC
IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
tAV = (L)(IAS)/(1.3*RATED BVDSS − VDD)
If R = 0
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS
− VDD) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
23456
0
60
120
180
240
300
TJ = −55oC
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VDD = 5V
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 8.
0.0
0.1
1
10
100
400
TJ = 25 oC
TJ= 175oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Forward Diode Characteristics
Figure 9.
0.0 0.5 1.0 1.5 2.0
0
50
100
150
200
250
300
350
400
5V
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
80ms PULSE WIDTH
Tj=25oC
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics Figure 10.
0.0 0.5 1.0 1.5 2.0
0
50
100
150
200
250
300
350
5V
5.5V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
80 ms PULSE WIDTH
Tj=175oC
Saturation Characteristics
Typical Characteristics
0.2 0.4 0.6 0.8 1.0 1.2
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Figure 11.
246810
0
1
2
3
4
5
ID = 80A PULS E DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
rDS(on), DRAIN TO SOURCE
ON−RESISTANCE (mW)
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 2 5oC
TJ = 175oC
RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction
Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0 PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
ID = 80A
VGS = 10V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
TJ, JUNCTION TEMPERATURE(oC)
Figure 13.
−80 −40 0
0.0
0.3
0.6
0.9
1.2
1.5 VGS = VDS
ID = 250 mA
NORMALIZED GATE
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE(oC)
Normalized Gate Threshold Voltage vs.
Temperature Figure 14.
−80 −40 0
0.90
0.95
1.00
1.05
1.10 ID = 1 mA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE (oC)
Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 15.
0.1 1 10 100
100
1000
10000
100000
f = 1MHz
VGS = 0V
Crss
Coss
Ciss
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs. Drain to Source
Voltage Figure 16.
0 20 40 60 80 100 120 140 160 180 200 220
0
2
4
6
8
10
VDD = 20V
VDD =16V
ID = 80A
VDD = 24V
Qg, GATE CHARGE(nC)
VGS, GATE TO SOURCE VOLTAGE(V)
Gate Charge vs. Gate to Source
Voltage
Typical Characteristics
40 80 120 160 200 40 80 120 160 200
−80 −40 0 40 80 120 160 200
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