NVBLS0D5N04M8 Product Preview Power MOSFET 40 V, 300 A, 0.57 mW, Single N-Channel Features * * * * * www.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25C unless otherwise noted Parameter Symbol Ratings Units Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGS 20 V ID 300 A Drain Current - Continuous (VGS = 10) (Note 1) TC = 25C Pulsed Drain Current TC = 25C D (9) See Figure 4 Single Pulse Avalanche Energy (Note 2) EAS 1064 mJ Power Dissipation PD 429 W 2.86 W/C TJ, TSTG -55 to +175 C Thermal Resistance, Junction-to-Case RqJC 0.35 C/W Maximum Thermal Resistance, Junction-to-Ambient (Note 3) RqJA 43 C/W Derate Above 25C Operating and Storage Temperature MO-299A CASE 100CU G (1) S (2-8) ORDERING INFORMATION Device Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting TJ = 25C, L = 0.3 mH, IAS = 84 A, VDD = 40 V during inductor charging and VDD = 0 V during time in avalanche. 3. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2 oz copper. Package NVBLS0D5N04M8TXG MO-299A (Pb-Free) Marking 0D5N04M8 This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. (c) Semiconductor Components Industries, LLC, 2018 April, 2018 - Rev. P0 1 Publication Order Number: NVBLS0D5N04M8/D NVBLS0D5N04M8 Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units ID = 250 mA, VGS = 0 V 40 - - V TJ = 25C - - 1 mA TJ = 175C (Note 4) OFF CHARACTERISTICS BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current VDS = 40 V, VGS = 0 V - - 1 mA VGS = 20 V - - 100 nA VGS = VDS, ID = 250 mA 2.0 3.0 4.0 V TJ = 25C - 0.46 0.57 mW VDS = 25 V, VGS = 0 V, f = 1 MHz ON CHARACTERISTICS VGS(th) Gate-to-Source Threshold Voltage RDS(on) Drain-to-Source On Resistance ID = 80 A, VGS = 10 V DYNAMIC CHARACTERISTICS Ciss Input Capacitance - 15900 - pF Coss Output Capacitance - 4000 - pF Crss Reverse Transfer Capacitance - 600 - pF - 2.6 - W - 220 296 nC - 29 39 nC Rg Qg(ToT) Qg(th) Gate Resistance f = 1 MHz Total Gate Charge at 10 V VGS = 0 to 10 V Threshold Gate Charge VGS = 0 to 2 V VDD = 20 V ID = 80 A Qgs Gate-to-Source Gate Charge - 73 - nC Qgd Gate-to-Drain "Miller" Charge - 41 - nC - - 221 ns - 54 - ns Rise Time - 82 - ns Turn-Off Delay - 106 - ns Fall Time - 52 - ns Turn-Off Time - - 215 ns ISD = 80 A, VGS = 0 V - - 1.25 V ISD = 40 A, VGS = 0 V - - 1.2 V IF = 80 A, dISD/dt = 100 A/ms, VDD = 32 V - 119 133 ns - 228 274 nC SWITCHING CHARACTERISTICS ton Turn-On Time td(on) Turn-On Delay tr td(off) tf toff VDD = 20 V, ID = 80 A, VGS = 10 V, RGEN = 6 W DRAIN-SOURCE DIODE CHARACTERISTICS VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge 4. The maximum value is specified by design at TJ = 175C. Product is not tested to this condition in production. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NVBLS0D5N04M8 1.2 700 1.0 600 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Characteristics 0.8 0.6 0.4 0.2 CURRENT LIMITED BY PACKAGE VGS = 10V CURRENT LIMITED BY SILICON 500 400 300 200 100 0 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(o C) 25 175 Figure 1. Normalized Power Dissipation vs. Case Temperature 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, Z qJC DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z qJA x RqJA + TC SINGLE PULSE 0.01 -5 -4 10 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 VGS = 10V T C = 25 oC IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25o C DERATE PEAK CURRENT AS FOLLOWS: I = I2 175 - T C 150 1000 SINGLE PULSE 100 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 NVBLS0D5N04M8 Typical Characteristics 10000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 2000 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms 100ms 1000 TC = 25 o C 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.001 0.01 0.1 1 10 100 1000 10000 400 VDD = 5V 180 TJ = 25 oC 120 TJ = -55 oC TJ = 175 oC 0 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 100 TJ = 175 oC 10 TJ = 25oC 1 0.1 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 400 350 VGS 350 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 300 250 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) STARTING TJ = 150 o C Figure 6. Unclamped Inductive Switching Capability PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 2 10 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 300 60 STARTING TJ = 25 oC tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area 240 100 1 0.1 0.1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BV DSS - V DD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV DSS - VDD) +1] 200 150 5V 100 80 ms PULSE WIDTH Tj=25 oC 50 0 0.0 300 5V 250 200 150 0 2.0 Figure 9. Saturation Characteristics 15V Top 10V 8V 5.5V 7V 6V 5.5V 5V Bottom 100 80 ms PULSE WIDTH Tj=175 oC 50 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS 0.0 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 NVBLS0D5N04M8 rDS(on), DRAIN TO SOURCE ON-RESISTANCE ( mW) 5 ID = 80A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Typical Characteristics PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 4 3 TJ = 175 oC TJ = 25oC 2 1 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.2 0.9 0.6 0.3 0.0 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 1.4 1.2 1.0 0.8 ID = 80A VGS = 10V 0.6 0.4 -80 40 80 120 160 -40 0 TJ, JUNCTION TEMPERATURE(oC) 200 ID = 1mA 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 100000 CAPACITANCE (pF) 1.6 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature Ciss 10000 Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 1.10 VGS = VDS ID = 250 mA -80 1.8 Figure 12. Normalized RDSON vs. Junction Temperature NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.5 2.0 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 ID = 80A VDD =16V 8 VDD = 20V VDD = 24V 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 220 Qg, GATE CHARGE(nC) Figure 15. Capacitance vs. Drain to Source Voltage Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 NVBLS0D5N04M8 PACKAGE DIMENSIONS H-PSOF8L 11.68x9.80 CASE 100CU ISSUE O www.onsemi.com 6 NVBLS0D5N04M8 PowerTrench is a registered trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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