Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 100V
▼ Lower Gate Charge RDS(ON) 120mΩ
▼ Fast Switching Characteristic ID11A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃/W
Rthj-a Maixmum Thermal Resistance, Junction-ambient 62 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 34.7
-55 to 150
Operating Junction Temperature Range -55 to 150
Continuous Drain Current, VGS @ 10V 7
Pulsed Drain Current130
Gate-Source Voltage +20
Continuous Drain Current, VGS @ 10V 11
Parameter Rating
Drain-Source Voltage 100
AP9997GP
RoHS-compliant Product
200812242
1
G
D
S
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
GDSTO-220(P)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 100 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=8A - - 120 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=8A - 7.3 - S
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=150oC) VDS=80V ,VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=10A - 13 21 nC
Qgs Gate-Source Charge VDS=80V - 2.2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 6 - nC
td(on) Turn-on Delay Time2VDS=50V - 5 - ns
trRise Time ID=10A - 17 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 15 - ns
tfFall Time RD=5Ω- 4.4 - ns
Ciss Input Capacitance VGS=0V - 450 720 pF
Coss Output Capacitance VDS=25V - 65 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=10A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=10A, VGS=0V - 41 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 73 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP9997GP
2
AP9997GP
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
4
8
12
16
20
012345
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
7.0V
5.0V
4.5V
VG=3.0V
0
4
8
12
16
20
0246810
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
7.0V
5.0V
4.5V
VG=3.0V
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=8A
VG=10V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
90
100
110
120
130
140
150
246810
VGS Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=8A
TC=25oC
0.0
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP9997GP
0
2
4
6
8
10
12
048121620
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =80V
ID=10A
Q
VG
10V
QGS QGD
QG
Charge
10
100
1000
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
td(on) trtd(off) tf
VDS
VGS
10%
90%
Package Outline : TO-220
Millimeters
MIN NOM MAX
A 4.25 4.48 4.70
b0.65 0.80 0.90
b1 1.15 1.38 1.60
c0.40 0.50 0.60
c1 1.00 1.20 1.40
E 9.70 10.00 10.40
E1 --- --- 11.50
e---- 2.54 ----
L 12.70 13.60 14.50
L1 2.60 2.80 3.00
L2 1.00 1.40 1.80
L3 2.60 3.10 3.60
L4 14.70 15.50 16.00
L5 6.30 6.50 6.70
φ3.50 3.70 3.90
D 8.40 8.90 9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-220
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
E
b
b1
e
D
L3
L4
L1
L2
A
c1
c
L
Package Code
Part Number
Date Code (ywwsss)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
9997GP
YWWSSS
LOGO
φ
L5
meet Rohs requirement
for low voltage MOSFET only
E1
5
