MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-24K * * * * * IC Collector current ........................ 150A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain. ............................. 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-6.5 930.25 B2X B2 C1 C2E1 10.5 6 B1 E1 9 B1X C1 62 6 E2 15 30 E2 480.25 E2 B2 B2X C2E1 E2 B1X 8 14 17 8 17 3 Tab#110, t=0.5 9.5 8 LABEL 37 17 E1 B1 1.8 16 3 21.5 30 3-M6 25 25 7 8 15.3 Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage Parameter IC=1A, VEB=2V 1200 V VCEX Collector-emitter voltage VEB=2V 1200 V VCBO Collector-base voltage Emitter open 1200 V VEBO Emitter-base voltage Collector open IC Collector current DC -IC Collector reverse current DC (forward diode current) 150 A PC Collector dissipation TC=25C 1000 W IB Base current DC 8 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1500 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Conditions Charged part to case, AC for 1 minute Main terminal screw M6 -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS 7 V 150 A 2500 V 1.96~2.94 N*m 20~30 kg*cm 1.96~2.94 N*m 20~30 kg*cm 470 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1200V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=1200V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 400 mA VCE (sat) Collector-emitter saturation voltage -- -- 3.0 V VBE (sat) Base-emitter saturation voltage -- -- 3.5 V -VCEO Collector-emitter reverse voltage -IC=150A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=150A, VCE=5V 75 -- -- -- -- -- 3.0 s Switching time VCC=600V, IC=150A, IB1=-IB2=3A -- -- 15 s -- -- 3.0 s Transistor part (per 1/2 module) -- -- 0.125 C/ W Diode part (per 1/2 module) -- -- 0.60 C/ W Conductive grease applied (per 1/2 module) -- -- 0.075 C/ W IC=150A, IB=3A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) IB=2A DC CURRENT GAIN hFE 160 IB=1A IB=0.5A 120 IB=0.2A IB=0.1A 80 Tj=25C 40 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 2.2 2.6 3.0 3.4 BASE-EMITTER VOLTAGE 10 2 7 5 3 2 3.8 10 1 7 5 4 3 2 IC=50A IC=100A 1 Tj=25C Tj=125C IB=3A Tj=25C Tj=125C 10 -1 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 3 VCE(sat) COLLECTOR CURRENT IC (A) SWITCHING TIME IC=150A 4 VBE(sat) 10 0 7 5 4 3 2 VBE (V) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj=25C Tj=125C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 2 VCE=2.8V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=2.8V Tj=25C 10 -1 1.8 VCE=5.0V 10 3 7 5 3 2 VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 4 7 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 200 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 ts tf ton VCC=600V IB1=-IB2=3A Tj=25C Tj=125C 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE 10 2 7 5 4 3 2 10 0 VCC=600V IB1=3A IC=150A Tj=25C Tj=125C ts 10 1 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA tf 10 -1 2 3 4 5 7 10 0 320 Tj=125C COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) SWITCHING TIME VS. BASE CURRENT (TYPICAL) 280 IB2=-3A 240 200 160 120 80 40 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 VCE (V) DERATING FACTOR (%) 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 0.16 1600 SECOND BREAKDOWN AREA 90 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) s 200 s 1m C 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 1200 800 100 COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 400 DERATING FACTOR OF F. B. S. O. A. 50s 100s D 10 2 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2=-6A TIME (s) TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 10 7 5 3 2 Tj=25C Tj=125C 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150DY-24K HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 1400 1200 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 3 7 VCC=600V 5 IB1=-IB2=3A 3 Tj=25C 2 Tj=125C 10 2 7 5 3 2 10 1 7 5 3 2 10 2 Irr 10 1 trr (s) 1600 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD CURRENT) Qrr 10 0 trr 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0 Zth (j-c) (C/ W) 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/