ILD32-X009 - Vishay Siliconix

ILD32/ ILQ32

Document Number 83650

Rev. 1.5, 26-Oct-04

Vishay Semiconductors

www.vishay.com

i179017

Pb-free

Optocoupler, Photodarlington Output, High Gain (Dual, Quad

Channel)

Features

• Isolation Test Voltage, 5300 VRMS

• High Isolation Resistance, 1011 Ω Typical

• Low Coupling Capacitance

• Standard Plastic DIP Package

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E52744 System Code H or J,

Double Protection

• DIN EN 60747-5-2 (VDE0884)

DIN EN 60747-5-5 pending

Available with Option 1

Description

The ILD32/ ILQ32 are optically coupled isolators with

a gallium arsenide infrared LED and a silicon photo-

darlington sensor. Switching can be achieved while

maintaining a high degree of isolation between driving

and load circuits.

These optocouplers can be used to replace reed and

mercury relays with advantages of long life, high

speed switching and elimination of magnetic fields.

Order Information

For additional information on the available options refer to

Option Information.

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is

not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Part Remarks

ILD32 CTR > 500 %, DIP-8

ILQ32 CTR > 500 %, DIP-16

ILD32-X006 CTR > 500 %, DIP-8 400 mil (option 6)

ILD32-X007 CTR > 500 %, SMD-8 (option 7)

ILD32-X009 CTR > 500 %, SMD-8 (option 9)

ILQ32-X007 CTR > 500 %, SMD-8 (option 7)

ILQ32-X009 CTR > 500 %, SMD-8 (option 9)

Parameter Test condition Symbol Value Unit

Peak reverse voltage VR3.0 V

Forward continuous current IF60 mA

Power dissipation Pdiss 100 mW

Derate linearly from 25°C 1.33 mW/°C

www.vishay.com

Document Number 83650

Rev. 1.5, 26-Oct-04

ILD32/ ILQ32

Vishay Semiconductors

Output

Coupler

1) between emitter and detector refer to standard climate 23 °C/50 %RH; DIN 50014

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Output

Parameter Test condition Symbol Value Unit

Collector-emitter breakdown

voltage

BVCEO 30 V

Collector (load) current IC125 mA

Power dissipation Pdiss 150 mW

Derate linearly from 25°C 2.0 mW/°C

Parameter Test condition Part Symbol Value Unit

Isolation test voltage 1) t = 1.0 sec. VISO 5300 VRMS

Creepage ≥ 7mm

Clearance ≥ 7mm

Comparative tracking index per

DIN IEC 112/VDE303, part 1

≥ 175

Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω

VIO = 500 V, Tamb = 100 °C RIO 1011 Ω

Total dissipation ILD32 Ptot 400 mW

ILQ32 Ptot 500 mW

Derate linearly from 25 °C ILD32 5.33 mW/°C

ILQ32 6.67 mW/°C

Storage temperature Tstg - 55 to + 150 °C

Operating temperature Tamb - 55 to + 100 °C

Lead soldering time at 260 °C 10 sec.

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage IF = 10 mA VF1.25 1.5 V

Reverse current VR = 3.0 V IR0.1 100 pF

Capacitance VR = 0 V CO25 pF

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter breakdown

voltage

IC = 100 µA, IF = 0 BVCEO 30 V

Breakdown voltage emitter-

collector

IE = 100 µABC

ECO 5.0 10 nA

Collector-emitter leakage

current

VCE = 10 V, IF = 0 ICEO 1.0 100 nA

ILD32/ ILQ32

Document Number 83650

Rev. 1.5, 26-Oct-04

Vishay Semiconductors

www.vishay.com

Coupler

Current Transfer Ratio

Switching Characteristics

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter Test condition Symbol Min Ty p . Max Unit

Collector emitter IC = 2.0 mA, IF = 8.0 mA VCEsat 1.0 V

Capacitance (input-output) CIO 0.5 pF

Parameter Test condition Symbol Min Ty p . Max Unit

Current Transfer Ratio IF = 10 mA, VCE = 10 V CTR 500 %

Parameter Test condition Symbol Min Ty p . Max Unit

Turn-on time VCC = 10 V, IF = 5.0 mA,

RL = 100 Ω

ton 15 µs

Turn-off time VCC = 10 V, IF = 5.0 mA,

RL = 100 Ω

toff 30 µs

Figure 1. Forward Voltage vs. Forward Current

iild32_01

IF - Forward Current - mA

100101.1

0.7

0.8

0.9

1.0

1.1

1.2

1. 3

1.4

VF - Forward Voltage - V

Ta = –55°C

Ta = 25°C

Ta = 85°C

Figure 2. Normalized Non-saturated and Saturated CTRCE vs.

LED Current

iild32_02

.1 1 10 100 1000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Vce =1V

Vce = 10 V

IF - LED Current - mA

NCTRce - Normalized CTR

Vce = 10 V

IF=10mA

Ta = 25°C

Normalized to:

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Document Number 83650

Rev. 1.5, 26-Oct-04

ILD32/ ILQ32

Vishay Semiconductors

Figure 3. Normalized Non-Saturated and Saturated Collector-

Emitter Current vs. LED Current

Figure 4. Low to High Propagation Delay vs. Collector Load

Resistance and LED Current

Figure 5. High to low Propagation Delay vs. Collector Load

Resistance and LED Current

iild32_03

100

1.1

.001

.01

Vce=1V

Vce=10V

IF - LED Current - mA

NIce - Normalized Ice

Ta = 25°C

IF = 10 mA

Vce=10V

Normalized to:

iild32_04

0 5 10 15 20

80 TA= 25°C, VCC =10V

Vth = 1.5 V

220 Ωıˇ

470 Ω

IF- LED Current - mA

100 Ω

1kΩ

tpLH -Low/High Propagation

Delay - µs

iild32_05

0 5 10 15 20

100Ω

1kΩ

IF- LED Current - mA

TA=25°C

VCC =10V

Vth = 1.5 V

tpHL -High/Low Propagation

Delay - µs

Figure 6. Switching Timing

Figure 7. Switching Schematic

iild32_06

tStF

tPHL

tPLH

VTH=1.5 V

iild32_07

VCC=10 V

IF=5 mA

F=10 KHz,

DF=50%

ILD32/ ILQ32

Document Number 83650

Rev. 1.5, 26-Oct-04

Vishay Semiconductors

www.vishay.com

Package Dimensions in Inches (mm)

i178006

pin one ID

.255 (6.48)

.268 (6.81)

.379 (9.63)

.390 (9.91)

.030 (0.76)

.045 (1.14)

4° typ.

.100 (2.54) typ.

10°

3°–9°

.300 (7.62)

typ.

.018 (.46)

.022 (.56) .008 (.20)

.012 (.30)

.110 (2.79)

.130 (3.30)

.150 (3.81)

.020 (.51 )

.035 (.89 )

.230(5.84)

.250(6.35)

4321

.031 (0.79)

.050 (1.27)

5678

ISO Method A

.255 (6.48)

.265 (6.81)

.779 (19.77 )

.790 (20.07)

.030 (.76)

.045 (1.14)

4°

.100 (2.54)typ.

10°

typ.

3°–9°

.018 (.46)

.022 (.56) .008 (.20)

.012 (.30)

.110 (2.79)

.130 (3.30)

pin one ID

.130 (3.30)

.150 (3.81)

.020(.51)

.035 (.89)

87654321

910111213141516

.031(.79)

.300 (7.62)

typ.

.230 (5.84)

.250 (6.35)

.050 (1.27)

i178007

ISO Method A

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Document Number 83650

Rev. 1.5, 26-Oct-04

ILD32/ ILQ32

Vishay Semiconductors

min.

.315 (8.00)

.020 (.51)

.040 (1.02)

.300 (7.62)

ref.

.375 (9.53)

.395 (10.03)

.012 (.30) typ.

.0040 (.102)

.0098 (.249)

15° max.

Option 9

.014 (0.35)

.010 (0.25)

.400 (10.16)

.430 (10.92)

.307 (7.8)

.291 (7.4)

.407 (10.36)

.391 (9.96)

Option 6

.315 (8.0)

MIN.

.300 (7.62)

TYP.

.180 (4.6)

.160 (4.1)

.331 (8.4)

MIN.

.406 (10.3)

MAX.

.028 (0.7)

MIN.

Option 7

18450

ILD32/ ILQ32

Document Number 83650

Rev. 1.5, 26-Oct-04

Vishay Semiconductors

www.vishay.com

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423