IGBT Module IC80 = 60 A
VCES = 600 V
VCE(sat)typ. = 2.4 V
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
PSII 75/06*
tentative data sheet
product still under
development
Features
•Package with DCB ceramic
base plate
•Isolation voltage 3000 V∼
•Planar glass passivated chips
•Low forward voltage drop
•Leads suitable for PC board
soldering
•UL Release applied
Applications
•AC and DC motor control
•AC servo and robot drives
•Power supplies
•Welding inverters
Advantages
•Easy to mount with four screws
•Space and weight savings
•Improved temperature and
power cycling capability
•High power density
•Small and light weight
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 600 V
VGES ± 20 V
IC25 TC = 25°C 90 A
IC80 TC = 80°C 60 A
ICM VGE = ±15 V; RG = 15 Ω; TVJ = 125°C 150 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 294 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 100 A; VGE = 15 V; TVJ = 25°C 2.4 2.8 V
TVJ = 125°C 2.8 V
VGE(th) IC = 1.5 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES;V
GE = 0 V; TVJ = 25°C 1.4 mA
TVJ = 125°C 6.5 mA
IGES VCE = 0 V; VGE = ± 20 V 150 nA
td(on) 150 ns
tr60 ns
td(off) 450 ns
tf40 ns
Eon 3.2 mJ
Eoff 2.2 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 4.2 nF
RthJC (per IGBT) 0.43 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 0.85 K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 60 A
VGE = 15/0 V; RG = 15 Ω
*NTC optional
ECO-TOPTM 1
V3 V6
N1
G1
Q1
V10
V9
N15
K1
V13
V12
G15
V1
U1
A1
S15
D1
A9
A7
A15
R15
typical picture, for pin
configuration see outline
drawing
http://store.iiic.cc/
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
tentative data sheet
product still under
development
Reverse diodes (FRED)
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 130 A
IF80 TC = 80°C 80 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 60 A; TVJ = 25°C 1.78 1.99 V
TVJ = 125°C 1.33 V
IRM IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C 28 A
trr VR = 300 V; VGE = 0 V 100 ns
RthJC 0.66 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.32 K/W
Module
Symbol Conditions Maximum Ratings
TVJ -40...+125 °C
Tstg -40...+150 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~
MdMounting torque (M5) 3 N m
26 lb.in.
aMax. allowable acceleration 50 m/s2
Symbol Conditions Characteristic Values
min. typ. max.
dSCreepage distance on surface (Pin to heatsink) 11.2 m m
dAStrike distance in air (Pin to heatsink) 11.2 m m
Weight 86 g
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R25 T = 25°C 4.75 5.0 5.25 kΩ
B25/50 3375 K
Package style and outline
Dimensions in mm (1mm = 0.0394“)
http://store.iiic.cc/
