98-0476PBF - INFINEON TECHNOLOGIES AG

INSULATED GATE BIPOLAR TRANSISTOR

TO-247AC

IRGP4640PbF

TO-247AD

IRGP4640-EP

GCE

IRGP4640PbF

IRGP4640-EPbF

GC E

Gate Collector Emitter

VCES = 600V

IC = 40A, TC = 100°C

tSC ≥ 5µs, TJ(max) = 175°C

VCE(on) typ. = 1.60V @ IC = 24A

Features Benefits

Low VCE(ON) and Switching Losses High efficiency in a wide range of applications and switching

frequencies

Square RBSOA and Maximum Junction Temperature 175°C Improved reliability due to rugged hard switching performance

and higher power capability

Positive VCE (ON) Temperature Coefficient Excellent current sharing in parallel operation

5µs short circuit SOA Enables short circuit protection scheme

Lead-Free, RoHS compliant Environmentally friendly

Applications

• Inverters

• UPS

• Welding

Absolute Maximum Ratings

Parameter Max. Units

VCES Collector-to-Emitter Voltage 600 V

IC @ TC = 25°C Continuous Collector Current 65

IC @ TC = 100°C Continuous Collector Current 40

ICM Pulse Collector Current, VGE = 15V

ILM Clamped Inductive Load Current, VGE = 20V

96 A

VGE Continuous Gate-to-Emitter Voltage ±20 V

Transient Gate-to-Emitter Voltage ±30

PD @ TC = 25°C Maximum Power Dissipation 250 W

PD @ TC = 100°C Maximum Power Dissipation 125

TJOperating Junction and -40 to +175

TSTG Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter Min. Typ. Max. Units

RθJC Junction-to-Case

––– ––– 0.60 °C/W

RθCS Case-to-Sink (flat, greased surface) ––– 0.24 –––

RθJA Junction-to-Ambient (typical socket mount) ––– ––– 40

n-channel

Form Quantit

IRGP4640PbF TO-247AC Tube 25 IRGP4640PbF

IRGP4640-EPbF TO-247AD Tube 25 IRGP4640-EPbF

Base part number Package Type Standard Pack Orderable part number

IRGP4640PbF/IRGP4640-EPbF

Notes:

Pulse width limited by max. junction temperature.

VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10Ω.

Rθ is measured at TJ of approximately 90°C.

Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

Maximum limits are based on statistical sample size characterization.

Values are influenced by parasitic L and C in measurement.

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

(BR)CES

Collector-to-Emitter Breakdown Voltage 600 — — V V

= 0V, I

= 100µA

∆

(BR)CES

/∆T

Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C V

= 0V, I

= 1mA (25°C-175°C)

CE(on)

Collector-to-Emitter Saturation Voltage — 1.60 1.90 I

= 24A, V

= 15V, T

= 25°C

—2.00— I

= 24A, V

= 15V, T

= 175°C

GE(th)

Gate Threshold Voltage 4.0 — 6.5 V V

= V

, I

= 700µA

∆V

GE ( t h)

/∆TJ

Threshold Voltage temp. coefficient — -18 — mV/°C V

= V

, I

= 1.0mA (25°C - 175°C)

gfe Forward Transconductance — 17 — S V

= 50V, I

= 24A, PW = 80µs

CES

Collector-to-Emitter Leakage Current — 1.0 20 µA V

= 0V, V

= 600V

—600— V

= 0V, V

= 600V, T

= 175°C

GE S

Gate-to-Emitter Leakage Current — — ±100 nA V

= ±20V

Switching Characteristics @ T

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max.

Units

Total Gate Charge (turn-on) — 50 75 I

= 24A

Gate-to-Emitter Charge (turn-on) — 15 20 nC V

= 15V

Gate-to-Collector Charge (turn-on) — 20 30 V

= 400V

Turn-On Switching Loss — 0.1 0.2

off

Turn-Off Switching Loss — 0.6 0.7 mJ

total

Total Switching Loss — 0.7 0.9 I

= 24A, V

= 400V, V

= 15V

d(on)

Turn-On delay time — 40 55 R

= 10Ω, T

= 25°C

Rise time —2030ns

E nergy los s es include tail & diode revers e recovery

d(off)

Turn-Off delay time — 105 115

Fall time — 30 40

Turn-On Switching Loss — 0.4 —

off

Turn-Off Switching Loss — 0.85 — mJ

total

Total Switching Loss — 1.25 — I

= 24A, V

= 400V, V

=15V

d(on)

Turn-On delay time — 40 — R

=10Ω, T

= 175°C

Rise time — 25 — ns

E nergy los s es include tail & diode revers e recovery

d(off)

Turn-Off delay time — 125 —

Fall time — 40 —

ies

Input Capacitance — 1490 — pF V

= 0V

oes

Output Capacitance — 130 — V

= 30V

res

Reverse Transfer Capacitance — 45 — f = 1.0Mhz

= 175°C, I

= 96A

RBSOA Reverse Bias Safe Operating Area FULL SQUARE V

= 480V, Vp =600V

Rg = 10Ω, V

= +20V to 0V

SCSOA Short Circuit Safe Operating Area 5 — — µs V

= 400V, Vp =600V

Rg = 10Ω, V

= +15V to 0V

Conditions

IRGP4640PbF/IRGP4640-EPbF

Fig. 2 - Maximum DC Collector Current vs.

Case Temperature

Fig. 3 - Power Dissipation vs. Case

Temperature

Fig. 4 - Forward SOA

TC = 25°C, TJ ≤ 175°C; VGE =15V

Fig. 5 - Reverse Bias SOA

TJ = 175°C; VGE =20V

10 100 1000

VCE (V)

100

1000

IC (A)

1 10 100 1000 10000

VCE (V)

0.1

100

1000

IC (A)

1msec

10µsec

100µsec

Tc = 25°C

Tj = 175°C

Single Pulse

25 50 75 100 125 150 175

TC (°C)

IC (A)

25 50 75 100 125 150 175

TC (°C)

100

150

200

250

300

Ptot (W)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

0.1 110 100

f , Frequency ( kHz )

Load Current ( A )

For both:

Duty cycle : 50%

Tj = 175°C

Tsink = 100°C

Gate drive as specified

Power Dissipation = 125W

Square Wave:

VCC

Dio de as specified

IRGP4640PbF/IRGP4640-EPbF

Fig. 8 - Typ. IGBT Output Characteristics

TJ = 175°C; tp = 80µs

0 1 2 3 4 5 6 7 8

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

Fig. 9 - Typical VCE vs. VGE

TJ = -40°C

5 101520

VGE (V)

VCE (V)

ICE = 12A

ICE = 24A

ICE = 48A

Fig. 10 - Typical VCE vs. VGE

TJ = 25°C

5 101520

VGE (V)

VCE (V)

ICE = 12A

ICE = 24A

ICE = 48A

Fig. 11 - Typical VCE vs. VGE

TJ = 175°C

5 101520

VGE (V)

VCE (V)

ICE = 12A

ICE = 24A

ICE = 48A

Fig. 6 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

012345678

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

0 1 2 3 4 5 6 7 8

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

IRGP4640PbF/IRGP4640-EPbF

Fig. 16 - Typ. Switching Time vs. RG

TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V

025 50 75 100 125

RG (Ω)

100

1000

Swiching Time (ns)

tdOFF

tdON

Fig. 14 - Typ. Switching Time vs. IC

TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V

10 20 30 40 50

IC (A)

100

1000

Swiching Time (ns)

tdOFF

tdON

Fig. 15 - Typ. Energy Loss vs. RG

TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V

0 25 50 75 100 125

Rg (Ω)

200

400

600

800

1000

1200

1400

1600

Energy (µJ)

OFF

EON

Fig. 17 - VGE vs. Short Circuit Time

VCC = 400V; TC = 25°C

8 1012141618

VGE (V)

Time (µs)

120

160

200

240

280

Current (A)

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

0 5 10 15

VGE (V)

100

120

ICE (A)

TJ = 25°C

TJ = 175°C

Fig. 13 - Typ. Energy Loss vs. IC

TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V

0 102030405060

IC (A)

200

400

600

800

1000

1200

1400

1600

1800

Energy (µJ)

EOFF

EON

IRGP4640PbF/IRGP4640-EPbF

Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.2568 0.000311

0.3429 0.006347

τJ

τ1

τ2

R1R2

τC

Ci i/Ri

Ci= τi/Ri

Fig. 18 - Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

Fig. 19 - Typical Gate Charge vs. VGE

ICE = 24A; L = 600µH

020 40 60 80 100

VCE (V)

100

1000

10000

Capacitance (pF)

Cies

Coes

Cres

0 5 10 15 20 25 30 35 40 45 50 55

Q G, Total Gate Charge (nC)

VGE, Gate-to-Emitter Voltage (V)

VCES

= 300V

VCES

= 400V

IRGP4640PbF/IRGP4640-EPbF

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

VCCDUT

80 V

DUT VCC

Fig.C.T.5 - Resistive Load Circuit

VCC

DUT

R =

VCC

ICM

G force

C sens

100K

DUT

0.0075µF

D1 22K

E force

C force

E sense

Fig.C.T.6 - BVCES Filter Circuit

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

VCC

DUT /

DRIVER

diode clamp /

DUT

-5V

DUT

VCC

RSH

IRGP4640PbF/IRGP4640-EPbF

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175°C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175°C using Fig. CT.4

-100

100

200

300

400

500

600

-0.40 0.10 0.60

Time(µs)

(V)

-5

EOFF Loss

5% VCE

5% ICE

90% ICE

VCE

ICE

-100

100

200

300

400

500

600

11.70 11.90 12.10 12.30

Time (µs)

(V)

-10

EON

ICE

90% test

10% ICE

5% VCE

VCE

Fig. WF4 - Typ. S.C. Waveform

@ TJ = 25°C using Fig. CT.3

-100

100

200

300

400

500

600

-5.00 0.00 5.00 10.00

time (µS)

(V)

-50

100

150

200

250

300

(A)

IRGP4640PbF/IRGP4640-EPbF

TO-247AC Part Marking Information

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC package is not recommended for Surface Mount Application.

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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IRGP4640PbF/IRGP4640-EPbF

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

TO-247AD Part Marking Information

TO-247AD Package Outline

Dimensions are shown in millimeters (inches)

TO-247AD package is not recommended for Surface Mount Application.

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IRGP4640PbF/IRGP4640-EPbF

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Highest passing voltage.

Qualification Information

†

Moisture Sensitivity Level TO-247AC N/A

TO-247AD N/A

ESD

Qualification Level Industrial

(per International Rectifier’s internal

guidelines)

RoHS Compliant Yes

Human Body Model

Class H1C (+/- 2000V)

††

(per JEDEC JESD22-A114)

Charged Device Model

Class C5 (+/- 1000V)

††

(per JEDEC JESD22-C101)

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/