© 2009 IXYS CORPORATION, All Rights Reserved
G = Gate C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C, RGE = 1MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C36 A
IC90 TC= 90°C20 A
ICM TC= 25°C, 1ms 80 A
SSOA VGE = 15V, TJ = 125°C, RG = 15Ω ICM = 40 A
(RBSOA) Clamped Inductive load @VCE ≤ ≤
≤ ≤
≤ 1200 V
PCTC= 25°C 180 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting Torque (TO-220) 1.13/10 Nm/lb.in.
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C
Weight TO-263 2.5 g
TO-220 3.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC= 250μA, VGE = 0V 1200 V
VGE(th) IC= 250μA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES,VGE = 0V 25 μA
TJ = 125°C 1 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC = 16A, VGE = 15V, Note 2 2.7 3.1 V
TJ = 125°C 2.8 V
DS100126(03/09)
GenX3TM 1200V IGBT
Preliminary Technical Information
VCES = 1200V
IC90 = 20A
VCE(sat) ≤≤
≤≤
≤ 3.1V
IXGA20N120B3
IXGP20N120B3
High Speed Low Vsat PT
IGBTs 3-20 kHz Switching
Features
zOptimized for Low Conduction and
Switching Losses
zSquare RBSOA
zInternational Standard Packages
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zWelding Machines
zInductive Heating
TO-263 (IXGA)
G
EC (TAB)
TO-220 (IXGP)
G
E
C
C (TAB)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N120B3
IXGP20N120B3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 16A, VCE = 10V, Note 2 7.5 12.5 S
Cies 1070 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 80 pF
Cres 32 pF
Qg 51 nC
Qge IC = 16A, VGE = 15V, VCE = 0.5 • VCES 7.4 nC
Qgc 23 nC
td(on) 16 ns
tri 31 ns
Eon 0.92 mJ
td(off) 150 ns
tfi 155 ns
Eoff 0.56 1.00 mJ
td(on) 16 ns
tri 45 ns
Eon 1.60 mJ
td(off) 180 ns
tfi 540 ns
Eoff 1.63 mJ
RthJC 0.69 °C/W
RthCK TO-220 0.50 °C/W
Inductive load, TJ = 25°°
°°
°C
IC = 16A, VGE = 15V
VCE = 600V, RG = 15Ω
Note 1
Notes: 1. Switching Times may Increase for VCE (Clamp) > 0.5 • VCES,
Higher TJ or Increased RG.
2. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Inductive load, TJ = 125°°
°°
°C
IC = 16A, VGE = 15V
VCE = 600V, RG = 15Ω
Note 1
TO-263 (IXGA) Outline
Pins: 1 - Gate 2 - Drain
TO-220 (IXGP) Outline
© 2009 IXYS CORPORATION, All Rights Reserved
Fi g . 1. Ou tp u t C h ar acter i sti cs
@ 25ºC
0
4
8
12
16
20
24
28
32
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
7V
5V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
0 4 8 1216202428
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
7V
9V
11V
13V
Fig. 3. Output Characteristics
@ 125ºC
0
4
8
12
16
20
24
28
32
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 32A
I
C
= 16A
I
C
= 8A
Fi g . 5. Co l l ect or -to -Emi tt er V ol tag e
vs. Gate-to -Emitter Vo ltag e
1
2
3
4
5
6
7
8
5 6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 32
A
T
J
= 25ºC
8
A
16
A
Fi g . 6. I n pu t Ad mi ttance
0
5
10
15
20
25
30
35
40
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GE
- Volts
I
C
-
Amperes
T
J
= - 40ºC
25ºC
125ºC
IXGA20N120B3
IXGP20N120B3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N120B3
IXGP20N120B3
IXYS REF: G_20N120B3(4L)03-17-09
Fi g . 7. Transconductance
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. R ever se-Bi as Safe Oper ati n g Area
0
5
10
15
20
25
30
35
40
45
200 300 400 500 600 700 800 900 1000 1100 1200 1300
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 15Ω
dV / dt < 10V / ns
Fi g . 11. Maxi mu m Transi en t Thermal I mp edan ce
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 16A
I
G
= 10 mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1MHz
Cies
Coes
Cres
© 2009 IXYS CORPORATION, All Rights Reserved
Fig. 12. Inductive Switching
Energ y L oss vs. G ate Resi st an ce
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
10 20 30 40 50 60 70 80 90
R
G
- Ohms
E
off
- MilliJoules
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 32A
I
C
= 16A
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
0
100
200
300
400
500
600
700
800
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
-
Nanoseconds
80
100
120
140
160
180
200
220
240
t d(off)
-
Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 15Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 32A
I
C
= 16A
Fig. 15. Inductive Turn-off
Switch i n g Times vs. Gate R es is tan ce
200
300
400
500
600
700
800
10 20 30 40 50 60 70 80 90
R
G
- Ohms
t f
- Nanoseconds
0
100
200
300
400
500
600
t d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 600V
I
C
= 16A
I
C
= 32A
Fig. 13. Inductive Switching
Energ y L oss vs. Co l lector C u rr en t
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
10 12 14 16 18 20 22 24 26 28 30 32
I
C
- Amperes
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 15
Ω ,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
4.8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 15Ω
,
V
GE
= 15V
V
CE
= 600V
I
C
= 32A
I
C
= 16A
Fig. 16. Inductive Turn-off
Switch i n g Times vs. C o l l ecto r C u r r en t
0
100
200
300
400
500
600
700
800
10 12 14 16 18 20 22 24 26 28 30 32
I
C
- Amperes
t f i
- Nanoseconds
100
120
140
160
180
200
220
240
260
t d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 15Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
IXGA30N120B3
IXGP30N120B3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N120B3
IXGP20N120B3
IXYS REF: G_20N120B3(4L)03-17-09
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
0
20
40
60
80
100
120
140
10 12 14 16 18 20 22 24 26 28 30 32
I
C
- Amperes
t
r i
- Nanoseconds
12
14
16
18
20
22
24
26
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 15Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive T urn-on
Switching Times vs. Junction Temp erature
0
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
12
14
16
18
20
22
24
26
28
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 15Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 16A
I
C
= 32A
Fig. 18. Inductive T urn-on
Swit ch i n g Times vs. Gat e R esi stan c e
20
40
60
80
100
120
140
160
180
200
10 20 30 40 50 60 70 80 90
R
G
- Ohms
t
r i
- Nanoseconds
0
10
20
30
40
50
60
70
80
90
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 16A
I
C
= 32A
