BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Min Max Min Max
Case : SOT- 23 small outline plastic package 2.80 3.00 0.110 0.118
1.20 1.40 0.047 0.055
0.30 0.50 0.012 0.020
1.80 2.00 0.071 0.079
2.25 2.55 0.089 0.100
0.90 1.20 0.035 0.043
Package Packing Marking
SOT-23 3K / 7" Reel 3A
SOT-23 3K / 7" Reel 3B
SOT-23 3K / 7" Reel 3E
SOT-23 3K / 7" Reel 3F
SOT-23 3K / 7" Reel 3G
SOT-23 3K / 7" Reel 3J
SOT-23 3K / 7" Reel 3K
SOT-23 3K / 7" Reel 3L
SOT-23 3K / 7" Reel 3A
SOT-23 3K / 7" Reel 3B
SOT-23 3K / 7" Reel 3E
SOT-23 3K / 7" Reel 3F
SOT-23 3K / 7" Reel 3G
SOT-23 3K / 7" Reel 3J
SOT-23 3K / 7" Reel 3K
SOT-23 3K / 7" Reel 3L
Maximum Ratings
BC856
BC857
BC858
BC856
BC857
BC858
Notes:1. Valid provided that electrodes are kept at ambient temperature
BC857C RFG
BC858A RFG
BC858B RFG
BC858C RFG
SOT-23
Type Number Symbol
Epitaxial planar die construction
BC858B RF
Weight : 0.008gram (approximately)
Maximum Ratings and Electrical Characteristics
C
Unit (mm)
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
-5
250
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Unit (inch)
Dimensions
BC856A RFG
Suggested PAD Layout
V
V
-65
-45
-30
-80
-50
-30
BC858C RF
BC856B RFG
BC857A RFG
BC857B RFG
Rating at 25°C ambient temperature unless otherwise specified.
B
Power Dissipation PD
BC857A RF
BC857B RF
BC857C RF
BC858A RF
Value
Features
Mechanical Data
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
A
High temperature soldering guaranteed: 260°C/10s
F
D
E
Junction and Storage Temperature Range TJ, TSTG
Emitter-Base Voltage VEBO
Collector Current IC
Ordering Information
Part No.
BC856A RF
BC856B RF
Units
°C
-0.1
-55 to + 150
A
mW
V
B
A
C
D
F
E
2 Emitter
3 Collector
1 Base
2.0
0.079
0.95
0.037
0.9
0.035
0.8
0.031
Version : E11
BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
Electrical Characteristics Units
Collector-Base Breakdown Voltage
BC856
BC857
BC858
IC= -10μAI
E= 0 V
Collector-Emitter Breakdown Voltage
BC856
BC857
BC858
IC= -10mA IB= 0 V
IE= -1μAI
C= 0 V
VCB= -30V IE= 0 nA
VEB= -5V IC=0 μA
VCE= -5V IC= -2mA
IC= -100mA IB= -5mA V
IC= -100mA IB= -5mA V
VCE= -5V IC= -10mA f= 100MHz MHz
Tape & Reel specification
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
BC856A, BC857A, BC858A
DC current gain BC856B, BC857B, BC858B
BC857C, BC858C
2.00 ±0.05
Emitter-Base Breakdown Voltage
0.229 ±0.013
Collector Cut-off Current
IEBO -
125
220
420
hFE
Emitter Cut-off Current
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
-
-
ICBO
V(BR)CEO
V(BR)EBO
12.30 ±0.20
8.10 ±0.20 W
4.00 ±0.10
E
F
-
-
Transition frequency
W1
P0
P1
100
fT-
T
D1
D2
--5
-0.1
250
475
800
- -15
Min MaxType Number
-80
-50
-30
Symbol
V(BR)CBO
-65
-45
-30
55 Min
Item Symbol Dimension(mm)
A
B
3.15 ±0.10
1.50 ± 0.10
-0.65
-1.1
178 ± 1
d
D
C
2.77 ±0.10
1.22 ±0.10
Collector-Emitter saturation voltage VCE(sat)
Base-Emitter saturation voltage VBE(sat)
W1
D1D2
D
T
C
dP1
P0
A
B
FW
E
Direction of Feed
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
TSC label
BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
-0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
IB = - 50µA
IB = - 100µA
IB = - 150µA
IB = - 200µA
IB = - 250µA
IB = - 300µA
IB = - 350µA
IB = - 400µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
10
100
1000
VCE = - 5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100
VCE = - 5V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
f=1MHz IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10
10
100
1000
f=1MHz IE=0
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
Version : E11
BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Figure 7. DC current gain as a function of
collector current; typical values
Figure 8. Base-emitter voltage as a function of
collector current; typical values
VBE-IC
hFE
-
I
C
Version : E11
