Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 1 1Publication Order Number:
MAC223A6FP/D
MAC223A6FP, MAC223A8FP,
MAC223A10FP
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
lighting systems, hea ter c ontrols, motor controls and power supplies; or
wherever full–wave silicon–gate–controlled devices are needed.
•Off–State Voltages to 800 Volts
•All Diffused and Glass Passivated Junctions for Parameter Uniformity
and Stability
•Small, Rugged Thermowatt Construction for Thermal Resistance and
High Heat Dissipation
•Gate Triggering Guaranteed in Four Modes
• Indicates UL Registered — File #E69369
•Device Marking: Logo, Device Type, e.g., MAC223A6FP, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +125°C, Sine Wave 50 to
60 Hz, Gate Open) MAC223A6FP
MAC223A8FP
MAC223A10FP
VDRM,
VRRM
400
600
800
Volts
On-State RMS Current (TC = +80°C)(2)
Full Cycle Sine W ave 50 to 60 Hz IT(RMS) 25 Amps
Peak Non–repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 80°C)
Preceded and followed by rated current
ITSM 250 Amps
Circuit Fusing (t = 8.3 ms) I2t 260 A2s
Peak Gate Power
(t
p
2 µsec; TC = +80°C) PGM 20 Watts
Average Gate Power
(t = 8.3 ms; TC = +80°C) PG(AV) 0.5 Watt
Peak Gate Current
(t
p
2 µsec; TC = +80°C) IGM 2.0 Amps
Peak Gate Voltage
(t
p
2 µsec; TC = +80°C) VGM
"
10 Volts
RMS Isolation Voltage (TA = 25°C,
Relative Humidity
p
20%) () V(ISO) 1500 Volts
Operating Junction Temperature TJ–40 to
+125 °C
Storage Temperature Range Tstg –40 to
+150 °C
Mounting Torque — 8.0 in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.
ISOLATED TRIAC
25 AMPERES RMS
400 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MAC223A6FP ISOLATED TO220FP 500/Box
http://onsemi.com
MAC223A8FP ISOLATED TO220FP 500/Box
MT1
G
MT2
ISOLATED TO–220 Full Pack
CASE 221C
STYLE 3
123
PIN ASSIGNMENT
1
2
3
Main Terminal 2
Gate
Main Terminal 1
MAC223A10FP ISOLATED TO220FP 500/Box
()
MAC223A6FP, MAC223A8FP, MAC223A10FP
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.2 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C
(VD = Rated VDRM, VRRM; Gate Open) TJ = 125°CIDRM,
IRRM —
——
—10
2.0 µA
mA
ON CHARACTERISTICS
Peak On-State Voltage
(ITM =
"
35 A Peak, Pulse Width
p
2 ms; Duty Cycle
p
2%) VTM — 1.4 1.85 Volts
Gate T rigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)
IGT
—
—20
30 50
75
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)
VGT
—
—1.1
1.3 2.0
2.5
Volts
Gate Non–trigger Voltage
(VD = 12 V, TJ = 125°C, RL = 100 Ω)
All Quadrants
VGD 0.2 0.4 — Volts
Holding Current
(VD = 12 Vdc, Gate Open, Initiating Current =
"
200 mA) IH— 10 50 mA
Gate Controlled T urn–On Time
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) tgt — 1.5 — µs
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential W aveform, TC = 125°C) dv/dt — 40 — V/µs
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)
dv/dt(c) — 5.0 — V/µs
MAC223A6FP, MAC223A8FP, MAC223A10FP
http://onsemi.com
3
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 – VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(–) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(–) MT2
REF
MT1
(–) IGT
GATE
(–) MT2
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT – + IGT
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
MAC223A6FP, MAC223A8FP, MAC223A10FP
http://onsemi.com
4
Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation
IT(RMS), RMS ON–STATE CURRENT (AMPS)
15
105
85
75
1005
95
115
125
T
2520
IT(RMS), RMS ON–STATE CURRENT (AMPS)
150
40
20
10
0510
30
P
20 25
,
MA
X
IM
U
M
ALL
O
WA
B
L
E C
AS
E
T
E
M
PE
RAT
U
R
E
(
C
)
°
C
, AVERAGE POWER DISSIPATION (WATTS)
D(AV)
Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage
Figure 5. Typical Hold Current Figure 6. Typical On–State Characteristics
vTM, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
0
100
10
1
0.1 1234
TJ, JUNCTION TEMPERATURE (°C)
60–60
1
0.3
0.2
0.1 40–40 –20 0 20
0.5
2
3
NO
RMALI
ZED G
AT
E CU
RR
EN
T
i
50
5
0.5
200
TJ = 25°C
12010080 140
VD = 12 V
RL = 100
W
TJ, JUNCTION TEMPERATURE (°C)
60–60
1
0.3
0.2
0.1 40–40 –20 0 20
0.5
2
3
NORMALIZED GATE VOLTAGE
12010080 140
VD = 12 V
RL = 100
W
TJ, JUNCTION TEMPERATURE (°C)
60–60
1
0.3
0.2
0.1 40–40 –20 0 20
0.5
2
NO
RMALI
ZED HO
L
D CU
RR
EN
T
12010080 140
ITM = 200 mA
GATE OPEN
, INST ANTANEOUS ON–STA TE CURRENT (AMPS)
TM
MAC223A6FP, MAC223A8FP, MAC223A10FP
http://onsemi.com
5
PACKAGE DIMENSIONS
ISOLATED TO–220 Full Pack
CASE 221C–02
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
–Y–
–B– –T–
Q
P
A
K
H
Z
G
L
F
D3 PL
M
B
M
0.25 (0.010) Y
E
NS
J
R
C
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.680 0.700 17.28 17.78
B0.388 0.408 9.86 10.36
C0.175 0.195 4.45 4.95
D0.025 0.040 0.64 1.01
E0.340 0.355 8.64 9.01
F0.140 0.150 3.56 3.81
G0.100 BSC 2.54 BSC
H0.110 0.155 2.80 3.93
J0.018 0.028 0.46 0.71
K0.500 0.550 12.70 13.97
L0.045 0.070 1.15 1.77
N0.049 ––– 1.25 –––
P0.270 0.290 6.86 7.36
Q0.480 0.500 12.20 12.70
R0.090 0.120 2.29 3.04
S0.105 0.115 2.67 2.92
Z0.070 0.090 1.78 2.28
123
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
MAC223A6FP, MAC223A8FP, MAC223A10FP
http://onsemi.com
6
Notes
MAC223A6FP, MAC223A8FP, MAC223A10FP
http://onsemi.com
7
Notes
MAC223A6FP, MAC223A8FP, MAC223A10FP
http://onsemi.com
8
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