V
RRM
= 100 V - 600 V
I
F
=12 A
Features
• High Surge Capability DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol S12B (R) S12D (R) Unit
Re
etitive
eak reverse volta
eV
RRM
100 200 V
• Types from 100 V to 600 V V
RRM
Silicon Standard
Recover
Diode
Conditions
600
S12B thru S12JR
S12J (R)
400
S12G (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
2. Reverse polarity (R): Stud is anode.
RMS reverse voltage V
RMS
70 140 V
DC blocking voltage V
DC
100 200 V
Continuous forward current I
F
12 12 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol S12B (R) S12D (R) Unit
Diode forward voltage 1.1 1.1
10 10 μA
12 12 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
2.50 2.50 °C/W
-55 to 150 -55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
420
600400
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
-55 to 150
S12J (R)
10 10
S12G (R)
2.50
V
R
= 50 V, T
j
= 175 °C
2.50
1.1 1.1
12
V
R
= 50 V, T
j
= 25 °C
I
F
= 12 A, T
j
= 25 °C
T
C
≤ 144 °C
Conditions
280
280 280
-55 to 150
12 12
12
A280
Reverse current I
R
V
F
280
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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