75 A
95 A
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.71, .91 SERIES
Bulletin I27132 rev. I 09/04
1
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Parameters IRK.71 IRK.91 Units
IT(AV) or IF(AV)
@ 85°C
IO(RMS)
(*) 165 210 A
ITSM @ 50Hz 1665 1785 A
IFSM @ 60Hz 1740 1870 A
I2t @ 50Hz 13.86 15.91 KA2s
@ 60Hz 12.56 14.52 KA2s
I2√t 138.6 159.1 KA2√s
VRRM
range 400 to 1600 V
TSTG - 40 to 125 oC
TJ - 40 to125 oC
(*) As AC switch.
75 95 A
Major Ratings and Characteristics
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
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IRK.71, .91 Series
2
Bulletin I27132 rev. I 09/04
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On-state Conduction
IT(AV) Max. average on-state
current (Thyristors) 180o conduction, half sine wave,
IF(AV) Max. average forward TC
= 85oC
c urrent (D i odes )
IO(RMS) Max. continuous RMS
on-state current. 165 210
As AC switch
ITSM Max. peak, one cycle 1665 1785 t=10ms No voltage
or non-repetitive on-state 1740 1870 t=8.3ms reapplied
IFSM or forward current 1400 1500 t=10ms 100% VRRM
1470 1570 t=8.3ms reapplied
1850 2000 t=10ms TJ = 25oC,
1940 2100 t=8.3ms no voltage reapplied
I2
t Max. I2t for fusing 13.86 15.91 t=10ms No voltage
12.56 14.52 t=8.3ms reapplied
9.80 11.25 t=10ms 100% VRRM
8.96 10.27 t=8.3ms reapplied
17.11 20.00 t=10ms TJ = 25oC,
15.60 18.30 t= 8.3ms no voltage reapplied
I2√t Max. I2√t for fusing (1) 138.6 159.1 KA2√s t=0.1 to 10ms, no voltage reapplied,TJ = TJ max
VT(TO) Max. value of threshold 0.82 0.80 Low level (3)
voltage (2) 0.85 0.85 High level (4)
rt Max. value of on-state 3.00 2.40 Low level (3)
slope resistance (2) 2.90 2.25 High level (4)
VTM Max. peak on-state or ITM
= π x IT(AV)
VFM forward voltage IFM
= π x IF(AV)
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,
of rise of turned on 150 A/µs ITM =π x IT(AV), Ig = 500mA,
current tr < 0.5 µs, tp > 6 µs
IH Max. holding current 250 TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
IL Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
Parameters IRK.71 IRK.91 Units Conditions
Initial TJ = TJ max.
A
KA2s
V
mΩ
1.59 1.58 V
mA
or
I(RMS) I(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
- V V V mA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.71/ .91 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
Sinusoidal
half wave,
Initial TJ = TJ max.
75 95
TJ = TJ max
TJ = TJ max
TJ = 25°C
(1) I2t for time tx = I2√t x √tx (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7% x π x IAV < I < π x IAV
(4) I > π x IAV
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IRK.71, .91 Series
3
Bulletin I27132 rev. I 09/04
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IRRMMax. peak reverse and
IDRMoff-state leakage current
at VRRM, VDRM
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise TJ = 125oC, linear to 0.67 VDRM,
of off-state voltage (5) gate open circuit
TJ Junction operating
temperature range
Tstg Storage temp. range - 40 to 125
RthJC Max. internal thermal
resistance, junction 0.165 0.135 Per module, DC operation
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
15 mA TJ = 125 oC, gate open circuit
Thermal and Mechanical Specifications
500 V/µs
Parameters IRK.71 IRK.91 Units Conditions
- 40 to 125
0.1
5
Triggering
Blocking
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
K/W
Nm
Mounting surface flat, smooth and greased
VINS RMS isolation voltage V
PGM Max. peak gate power 12 12
PG(AV) Max. average gate power 3.0 3.0
IGM Max. peak gate current 3.0 3.0 A
-VGM Max. peak negative
gate voltage
VGT Max. gate voltage 4.0 TJ = - 40°C
required to trigger 2.5 TJ = 25°C
1.7 TJ = 125°C
IGT Max. gate current 270 TJ = - 40°C
required to trigger 150 mA TJ = 25°C
80 TJ = 125°C
VGD Max. gate voltage TJ
= 125oC,
that will not trigger rated VDRM
applied
IGD Max. gate current TJ
= 125oC,
that will not trigger rated VDRM
applied
Parameters IRK.71 IRK.91 Units Conditions
0.25 V
6 mA
W
V
10
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
°C
Parameters IRK.71 IRK.91 Units Conditions
Sine half wave conduction Rect. wave conduction
Devices Units
180o 120o 90o 60o 30o 180o 120o 90o 60o 30o
IRK.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18
IRK.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
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IRK.71, .91 Series
4
Bulletin I27132 rev. I 09/04
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Outline Table
Dimensions are in millimeters and [inches]
IRK T 91 / 16 A S90
Device Code
1 2 3 4 5
1 - Module type
2 - Circuit configuration (See Circuit Configuration table below)
3 - Current code * *
4 - Voltage code (See Voltage Ratings table)
5 - A : Gen V
6 - dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Ordering Information Table
6
* * Available with no auxiliary cathode.
To specify change: 71 to 72
91 to 92
e.g. : IRKT92/16A etc.
IRK.92 types
With no auxiliary cathode
NOTE: To order the Optional Hardware see Bulletin I27900
+
K2 G2
-
K1G1
~
(1)
(2)
(3)
(4) (5) (7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
IRKT IRKH IRKL IRKN
+
-
K1
G1
+
(1)
(2)
(3)
(4) (5)
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IRK.71, .91 Series
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Bulletin I27132 rev. I 09/04
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
70
80
90
100
110
120
130
0 10 20 30 40 50 60 70 80
Maximum Allowable Case Temperature (°C)
30° 60° 90° 120°
180°
Average On-state Current (A)
Conduction Angle
IRK.71.. Series
R ( D C ) = 0 . 3 3 K/ W
thJC
70
80
90
100
110
120
130
0 20 40 60 80 100 120
DC
30° 60°
90°
120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
IRK.71.. Series
R ( DC ) = 0 .3 3 K/ W
thJC
Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 4 - On-state Power Loss Characteristics
0
20
40
60
80
100
120
0 10 20 30 40 50 60 70 80
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
IRK.71.. Series
Per Ju nc t io n
T = 1 2 5 ° C
J
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
IRK.71.. Se rie s
Pe r Ju n c t i o n
T = 1 2 5 ° C
J
700
800
900
1000
1100
1200
1300
1400
1500
1600
1 10 100
Numb er Of Eq ua l Amp litud e Ha lf C yc l e C urrent Pulse s ( N)
Pe a k Ha lf Sin e W a v e O n - st a t e Cu rr e n t ( A )
Initia l T = 125°C
@ 6 0 H z 0 . 0 0 8 3 s
@ 5 0 H z 0 . 0 1 0 0 s
J
At Any Ra ted Loa d Condition And With
Ra t e d V A p p l i e d Fo l l o w i n g Su r g e .
RRM
IRK.71.. Se ries
Pe r Ju nc t io n
600
800
1000
1200
1400
1600
1800
0.01 0.1 1
Pe a k Half Sin e Wav e On -st a t e C u rre nt (A)
Pulse Tra in Dura t io n ( s)
Init ia l T = 125°C
No V olta g e Re a p plied
Ra t e d V Re a p p l i e d
Of Conduction May Not Be Maintained.
RRM
J
Maximum Non Rep etitive Surg e Current
Versus Pulse Train Duration. Control
IRK.71.. Series
Pe r Ju n c t i o n
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IRK.71, .91 Series
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Bulletin I27132 rev. I 09/04
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Fig. 9 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
R = 0.1 K/ W - Delt a R
thSA
0.3 K/ W
0.5 K/W
1 K/
W
2 K/
W
0.2 K/ W
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140 160 180
To t a l O u t p u t C u r r e n t ( A )
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.71.. Series
Si n g l e P h a s e Br i d g e
Connected
T = 1 2 5 ° C
J
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
1 K/
W
0.5 K/
W
0.3 K/
W
R = 0.1 K/
W - Delt
a R
0
.2 K/
W
thSA
0
100
200
300
400
500
600
700
800
0 40 80 120 160 200 240
To t a l O u t p u t C u r r e n t ( A )
Maximum Total Power Loss (W)
120°
(Rect)
3 x IRK.71.. Series
Th r e e P h a s e B r i d g e
Connected
T = 1 2 5 ° C
J
Fig. 7 - On-state Power Loss Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
R = 0.1 K/
W - Delta R
thSA
3 K/W
1.5 K/ W
1 K/
W
0.7 K/
W
0.5 K/ W
0.4 K/ W
0.3 K/
W
0.2 K/W
0
50
100
150
200
250
0 20 40 60 80 100 120 140 160 180
180°
120°
90°
60°
30°
To t a l R M S O u t p u t C u r r e n t ( A )
Maximum Total On-state Power Loss (W)
Conduction Angle
IRK.71.. Se rie s
Pe r M o d u l e
T = 1 2 5 ° C
J
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IRK.71, .91 Series
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Bulletin I27132 rev. I 09/04
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Fig. 11 - Current Ratings CharacteristicsFig. 10 - Current Ratings Characteristics
70
80
90
100
110
120
130
0 20 40 60 80 100
30° 60° 90°
120°
180°
Average On-state Current (A)
Maximum Allow able Ca se Temp erature (°C)
Cond uction Angle
IRK.91.. Se ries
R ( D C ) = 0 . 2 7 K/ W
thJC
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160
DC
30°
60°
90°
120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
IRK.91.. Series
R ( D C ) = 0 . 27 K/ W
thJC
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 13 - On-state Power Loss CharacteristicsFig. 12 - On-state Power Loss Characteristics
0
20
40
60
80
100
120
140
0 20 40 60 80 100
RM S Li m i t
Conduc tio n Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
IRK.91.. Series
Pe r J u n c t i o n
T = 1 2 5 ° C
J
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
IRK.91.. Se ries
Pe r Ju n c t i o n
T = 1 2 5 ° C
J
700
800
900
1000
1100
1200
1300
1400
1500
1600
1 10 100
Nu mb er Of Eq ua l Am p litu d e Ha lf C yc le Curre nt Pu lse s ( N)
Pe a k Ha lf Sin e Wa v e O n - st a t e C ur re n t ( A )
Init ial T = 125°C
@ 6 0 H z 0 . 0 0 8 3 s
@ 5 0 H z 0 . 0 1 0 0 s
J
At Any Rated Load Condition And With
Ra t e d V A p p l i e d Fo l l o w i n g Su r g e .
RRM
IRK.91.. Se rie s
Pe r Ju nc t io n
600
800
1000
1200
1400
1600
1800
0.01 0.1 1
Pe a k Ha l f Sin e Wa v e O n - st a t e C u rr e n t ( A )
Pulse Tra in Dura t io n ( s)
Versus Pulse Train Duration. Control
Init ia l T = 125°C
No V olt a g e Re a p p lie d
Ra t e d V Re a p p l i e d
RRM
J
Of Conduc tion May Not Be Maintained.
Ma xim um Non Re petitive Surg e Current
IRK.91.. Series
Pe r Junc t io n
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IRK.71, .91 Series
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Bulletin I27132 rev. I 09/04
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Fig. 17 - On-state Power Loss Characteristics
Fig. 18 - On-state Power Loss Characteristics
000 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
0.5 K/
W
0.3 K/ W
0.2 K/
W
R = 0.1 K/
W - Delta R
1 K/
W
2 K/
W
thSA
0
100
200
300
400
500
600
0 40 80 120 160 2 0
To t a l O u t p u t C u r r e n t ( A )
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.91.. Series
Si n g l e P h a s e B r i d g e
Connected
T = 1 2 5 ° C
J
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
0.5 K/
W
1 K/
W
0.3 K/
W
0.2 K/
W
R = 0.1 K/W - Delta R
thSA
0
100
200
300
400
500
600
700
800
900
0 40 80 120 160 200 240 280
To t a l O u t p u t C u r r e n t ( A )
Maximum Total Power Loss (W)
120°
(Rect)
3 x IRK.91.. Series
Th r e e P h a s e Br i d g e
Connected
T = 1 2 5 ° C
J
Fig. 16 - On-state Power Loss Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temp erature (°C)
1.5 K/ W
3 K
/
W
1 K/
W
0.7 K/
W
0.5 K/
W
0.3 K/
W
0.2 K/W
R = 0.1 K/W - Delta R
thSA
0
50
100
150
200
250
300
350
0 40 80 120 160 200 240
180°
120°
90°
60°
30°
To t a l RM S O u t p u t C u r r e n t ( A )
Maximum Total On-state Power Loss (W)
Conduction Angle
IRK.91.. Se rie s
Pe r M od ule
T = 1 2 5 ° C
J
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IRK.71, .91 Series
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Bulletin I27132 rev. I 09/04
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Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5
T = 2 5 ° C
J
Inst a nt aneous On-sta te C urrent ( A)
Inst a n t a ne o us On-st a t e Vo lt a g e (V)
T = 1 2 5 ° C
J
IRK.91.. Series
Pe r Ju nc t io n
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4
T = 2 5 ° C
J
Inst a nt ane ous On-st at e C urre nt (A)
Inst a n t aneo us On -st a t e Vo lta g e (V)
T = 1 2 5 ° C
J
IRK.71.. Series
Pe r J u n c t i o n
Fig. 23 - Thermal Impedance ZthJC Characteristics
Fig. 22 - Recovery Current CharacteristicsFig. 21 - Recovery Charge Characteristics
20
40
60
80
100
120
140
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Re covery Current - Irr (A)
Ra t e O f F a l l O f F o r w a r d C u r r e n t - d i / d t ( A / µ s)
100 A
50 A
I = 200 A
TM
20 A
10 A
IRK.71.. Series
IRK.91.. Series
T = 1 2 5 ° C
J
100
200
300
400
500
600
700
10 20 30 40 50 60 70 80 90 100
100 A
50 A
Ra t e O f Fa l l O f O n - st a t e C u r r e n t - d i / d t ( A / µ s)
Maximum Reverse Recovery Charge - Qrr (µC)
I = 200 A
TM
20 A
10 A
IRK.71.. Serie s
IRK.91.. Serie s
T = 1 2 5 ° C
J
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e W a v e P u l se D u r a t i o n ( s)
thJC
Tr a n s i e n t Th e r m a l I m p e d a n c e Z ( K / W )
Pe r Ju n c t i o n
St e a d y St a t e V a l u e :
R = 0 . 3 3 K / W
R = 0 . 2 7 K / W
(DC Operation)
IRK.71.. Se ries
IRK.91.. Se ries
thJC
thJC
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IRK.71, .91 Series
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Bulletin I27132 rev. I 09/04
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Fig. 24 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Re c t a n g u l a r g a t e p u l s e
(4) (3) (2) (1)
Inst a nt aneous Ga te Curre nt (A)
Inst a nt ane ous Ga te Vo lt a g e (V)
TJ = - 4 0 ° C
TJ = 2 5 ° C
TJ = 1 2 5 ° C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Fr e q u e n c y L im i t e d b y P G ( A V )
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% ra ted d i/ d t: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
ra te d d i/ d t: 20 V, 20 o hms
tr = 0.5 µs, tp >= 6 µs
IRK.71../ .91.. Series
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 09/04
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
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