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VTP Process Photodiodes VTP8350H
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two
lead ceramic substrate and coated with a thick
layer of clear epoxy. These diodes exhibit low
dark current under reverse bias and fast speed
of response.
PACKAGE DIMENSIONS inch (mm)
CASE 11 CERAMIC
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
ABSOLUTE MAXIMUM RATINGS
St or ag e Tem perat ure: -2 0° C t o 75°C
Oper ati ng Te mperat u r e: -2 0°C to 75 °C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTP curves, pages 45-46)
SYMBOL CHARACTERISTI C TEST CONDIT IONS VTP8350H UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 65 80 µA
TC ISC ISC Temperature C oefficient 2850 K .20 %/°C
VOC Open Circuit Voltage H = 100 fc, 2850 K 350 mV
TC VOC VOC Temperature Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 10 V 30 nA
RSH Shunt Resistance H = 0, V = 10 mV 100 GΩ
CJJunction Capacitance H = 0, V = 3 V 50 pF
Re Responsivity 940 nm .06 A/(W/cm2)
SRSensitivity @ Peak .55 A/W
λrange Spectral Application Range 400 1150 nm
λpSpectral Respo nse - Peak 925 nm
VBR Breakdown Voltage 33 140 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±60 Degrees
NEP Noise Equiv alent Power 1.8 x 10-13 (Typ.)
D* Specif ic Detectivit y 1.5 x 10 12 (Typ.) WHz⁄
cm Hz W⁄
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
RoHS Compliant
