TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com 0.35-GHz TO 4-GHz QUADRATURE MODULATORS Check for Samples: TRF370315, TRF370333 FEATURES APPLICATIONS * * GND BBIN BBIP GND GND 23 22 21 20 19 RGE PACKAGE (TOP VIEW) VCC 3 16 RF_OUT LON 4 15 NC GND 5 14 GND NC 6 13 NC 12 LOP GND GND 11 17 GND 2 10 GND BBQP VCC 9 18 BBQN 1 8 NC GND * * * * * Cellular Base Transceiver Station Transmit Channel CDMA: IS95, UMTS, CDMA2000, TD-SCDMA TDMA: GSM, IS-136, EDGE/UWC-136 Wireless Local Loop Wireless MAN Wideband Transceivers SPACE THE FINAL FRONTIER 24 * * * * * * * * 75-dBc Single-Carrier WCDMA ACPR at -11-dBm Channel Power Low Noise Floor: -163 dBm/Hz OIP3 of 23 dBm P1dB of 9 dBm Unadjusted Carrier Feedthrough of -40 dBm Unadjusted Side-Band Suppression of -40 dBc Single Supply: 4.5 V-5.5 V Operation Silicon Germanium Technology TRF370333 With 3.3-V CM at I, Q Baseband Inputs TRF370315 With 1.5-V CM at I, Q Baseband Inputs 7 2 NC 1 P0024-04 DESCRIPTION The TRF370315 and TRF370333 are low-noise direct quadrature modulators, capable of converting complex modulated signals from baseband or IF directly up to RF. The TRF370315 and TRF370333 are ideal for high-performance direct RF modulation from 350 MHz up to 4 GHz. These modulators are implemented as a double-balanced mixer. The RF output block consists of a differential to single-ended converter and an RF amplifier capable of driving a single-ended 50- load without any need of external components. The TRF370333 and TRF370315 devices have different common-mode voltage ratings at the I/Q baseband inputs. The TRF370315 requires a 1.5-V common-mode voltage, and the TRF370333 requires a 3.3-V common-mode voltage. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2006-2011, Texas Instruments Incorporated TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. VCC GND BBIN BBIP GND GND 24 23 22 21 20 19 FUNCTIONAL BLOCK DIAGRAM NC 1 18 VCC GND 2 17 GND LOP 3 16 RF_OUT LON 4 15 NC GND 5 14 GND NC 6 13 NC S 7 8 9 10 11 12 NC GND BBQN BBQP GND GND 0/90 B0175-01 NOTE: NC = No connection 2 Copyright (c) 2006-2011, Texas Instruments Incorporated TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com DEVICE INFORMATION TERMINAL FUNCTIONS TERMINAL NAME NO. I/O DESCRIPTION BBIN 22 I In-phase input BBIP 21 I In-phase input BBQN 9 I In-quadrature input BBQP 10 I In-quadrature input GND 2, 5, 8,11, 12, 14, 17, 19, 20, 23 - Ground LON 4 I Local oscillator input LOP 3 I Local oscillator input NC 1, 6, 7, 13, 15 - No connect 16 O RF output 18, 24 - Power supply RF_OUT VCC ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range (unless otherwise noted). Supply voltage range Digital I/O voltage range VALUE (2) UNIT -0.3 V to 6 V -0.3 V to VI + 0.3 V TJ Operating virtual junction temperature range -40 to 150 C TA Operating ambient temperature range -40 to 85 C Tstg Storage temperature range -65 to 150 C ESD Electrostatic discharge ratings Human body model (HBM) 75 V Charged device model (CDM) 75 V (1) (2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. RECOMMENDED OPERATING CONDITIONS Over operating free-air temperature range (unless otherwise noted). VCC Power-supply voltage MIN NOM MAX 4.5 5 5.5 UNIT V THERMAL CHARACTERISTICS PARAMETER RJA Thermal resistance, junction-to-ambient RJC Thermal resistance, junction-to-case Copyright (c) 2006-2011, Texas Instruments Incorporated TEST CONDITIONS High-K board, still air VALUE UNIT 29.4 C/W 18.6 C/W 3 TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com ELECTRICAL CHARACTERISTICS Over operating free-air temperature range (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DC Parameters ICC Total supply current (1.5 V CM) TA = 25C 195 205 Total supply current (3.3 V CM) TA = 25C 210 235 4 GHz 0 12 dBm mA LO Input (50-, Single-Ended) LO frequency range fLO 0.35 -5 LO input power LO port return loss 15 dB Baseband Inputs VCM I and Q input dc common voltage BW 1-dB input frequency bandwidth TRF370333 3.3 TRF370315 1.5 V 350 Input impedance, resistance ZI(single Input impedance, parallel capacitance ended) Input impedance, resistance Input impedance, parallel capacitance MHz 10 TRF370333 TRF370315 k 3 pF 5 k 3 pF ELECTRICAL CHARACTERISTICS Over recommended operating conditions, power supply = 5 V, TA = 25C, fLO = 350 MHz at 0 dBm, TRF370333 (unless otherwise noted). RF Output Parameters PARAMETER Voltage gain (1) G P1dB Output compression point IP3 Output IP3 IP2 Output IP2 MIN TYP MAX UNIT -4.18 dB TRF370333: Output RMS voltage over input I (or Q) RMS voltage -4.0 dB 9.4 dBm 24.5 dBm Measured at fLO + 2 x fBB 73.8 dBm Carrier feedthrough Unadjusted 35.6 dBm Sideband suppression Unadjusted 33.8 dBc Output noise floor (1) TEST CONDITIONS TRF370315: Output RMS voltage over input I (or Q) RMS voltage DC only to BB inputs, 13 MHz offset from fLO -158.0 1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm -152.6 6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm -157.4 dBm/Hz Single 4-MHz CW baseband input tone, differential-ended 196 VRMS. ELECTRICAL CHARACTERISTICS Over recommended operating conditions, power supply = 5 V, TA = 25C, fLO = 400 MHz at 0 dBm, TRF370315 (unless otherwise noted). RF Output Parameters PARAMETER Voltage gain (1) G TEST CONDITIONS MAX UNIT dB TRF370333: Output RMS voltage over input I (or Q) RMS voltage -1.905 dB Output compression point IP3 Output IP3 IP2 Output IP2 Measured at fLO + 2 x fBB Carrier feedthrough Sideband suppression 4 TYP -2.409 P1dB (1) MIN TRF370315: Output RMS voltage over input I (or Q) RMS voltage 9.4 dBm 23 dBm 62 dBm Unadjusted -37 dBm Unadjusted -39 dBc 20 Single 4-MHz CW baseband input tone, differential-ended 196 VRMS. Copyright (c) 2006-2011, Texas Instruments Incorporated TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com ELECTRICAL CHARACTERISTICS Over recommended operating conditions, power supply = 5 V, TA = 25C, fLO = 900 MHz at 0 dBm, TRF370315 (unless otherwise noted). RF Output Parameters PARAMETER Voltage gain (1) G TEST CONDITIONS MIN dB TRF370333: Output RMS voltage over input I (or Q) RMS voltage -2.79 dB Output compression point Output IP3 9 dBm 23 IP2 Output IP2 Measured at fLO + 2 x fBB dBm 63 dBm Carrier feedthrough Sideband suppression Unadjusted -37 dBm Unadjusted -42 dBc 9 dB 20 Output return loss Error vector magnitude (rms) DC only to BB inputs, 13 MHz offset from fLO -160.4 1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm -156.6 6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm -158.5 1 EDGE signal, Pout = -5 dBm 0.59% 1 EDGE signal, Pout = 0 dBm 0.63% 1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO = -15 dBm, 3rd harmonic of LO = -33 dBm (2) (1) (2) UNIT -3.552 IP3 EVM MAX TRF370315: Output RMS voltage over input I (or Q) RMS voltage P1dB Output noise floor TYP dBm/Hz 1% Single 4-MHz CW baseband input tone, differential-ended 196 VRMS. The second- and third-harmonic tests were made independently at each frequency. ELECTRICAL CHARACTERISTICS Over recommended operating conditions, power supply = 5 V, TA = 25C, fLO = 1800 MHz at 0 dBm, TRF370315 (unless otherwise noted). RF Output Parameters PARAMETER G Voltage gain (1) TEST CONDITIONS TRF370333: Output RMS voltage over input I (or Q) RMS voltage -2.367 dB Output IP3 IP2 Output IP2 Measured at fLO + 2 x fBB Carrier feedthrough Sideband suppression 9.5 dBm 23 dBm 55 dBm Unadjusted -40 dBm Unadjusted -47 dBc 8 dB 20 Output return loss DC only to BB inputs, 13 MHz offset from fLO 1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm -162.6 -160 6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm -159.4 1 EDGE signal, Pout = -5 dBm 0.66% 1 EDGE signal, Pout = 0 dBm 0.74% 1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO = -15.5 dBm, 3rd harmonic of LO = -30 dBm (2) (1) (2) UNIT dB Output compression point Error vector magnitude (rms) MAX -3.345 IP3 EVM TYP TRF370315: Output RMS voltage over input I (or Q) RMS voltage P1dB Output noise floor MIN dBm/Hz 1% Single 4-MHz CW baseband input tone, differential-ended 196 VRMS. The second- and third-harmonic tests were made independently at each frequency. Copyright (c) 2006-2011, Texas Instruments Incorporated 5 TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com ELECTRICAL CHARACTERISTICS Over recommended operating conditions, power supply = 5 V, TA = 25C, fLO = 1960 MHz at 0 dBm, TRF370315 (unless otherwise noted). RF Output Parameters PARAMETER Voltage gain (1) G P1dB IP3 IP2 TEST CONDITIONS MIN UNIT -3.449 dB TRF370333: Output RMS voltage over input I (or Q) RMS voltage -2.479 dB Output compression point 9.5 Output IP3, TRF370315 20 23 Output IP3, TRF370333 18 20 dBm dBm Output IP2 Measured at fLO + 2 x fBB 55 dBm Carrier feedthrough Unadjusted -40 dBm Sideband suppression Unadjusted -47 dBc 8 dB -162.6 DC only to BB inputs, 13 MHz offset from fLO Output noise floor Error vector magnitude (rms) -160 1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm 6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm -159.4 1 EDGE signal, Pout = -5 dBm 0.66% 1 EDGE signal, Pout = 0 dBm 0.74% 1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO = -15.5 dBm, 3rd harmonic of LO = -30 dBm (2) (1) (2) MAX TRF370315: Output RMS voltage over input I (or Q) RMS voltage Output return loss EVM TYP dBm/Hz 1% Single 4-MHz CW baseband input tone, differential-ended 196 VRMS. The second- and third-harmonic tests were made independently at each frequency. ELECTRICAL CHARACTERISTICS Over recommended operating conditions, power supply = 5 V, TA = 25C, fLO = 2140 MHz at 0 dBm, TRF370315 (unless otherwise noted). RF Output Parameters PARAMETER Voltage gain (1) G P1dB IP3 IP2 TEST CONDITIONS UNIT TRF370333: Output RMS voltage over input I (or Q) RMS voltage -2.791 dB 9.5 Output IP3, TRF370315 20 23 Output IP3, TRF370333 18 21 dBm dBm Output IP2 Measured at fLO + 2 x fBB 58 dBm Carrier feedthrough Unadjusted -40 dBm Sideband suppression Unadjusted -47 dBc 8.5 dB Adjacent-channel power ratio 20-MHz offset from fLO; dc only to BB inputs -163 20-MHz offset from fLO; 1 WCDMA signal; Pin = -20.5 dBVrms (I and Q input) -162 1 WCDMA signal; Pout = -13 dBm -75.8 1 WCDMA signal; Pout = -9 dBm -72 4 WCDMA signals; Pout = -23 dBm per carrier -68 1 WCDMA signal; Pout = -13 dBm Alternate-channel power ratio 1 WCDMA signal; Pout = -9 dBm 4 WCDMA signals; Pout = -23 dBm per carrier 6 MAX dB Output compression point Output noise floor (1) TYP -3.432 Output return loss ACPR MIN TRF370315: Output RMS voltage over input I (or Q) RMS voltage dBm/Hz dBc -79 -80.5 dBc -69 Single 4-MHz CW baseband input tone, differential-ended 196 VRMS. Copyright (c) 2006-2011, Texas Instruments Incorporated TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com ELECTRICAL CHARACTERISTICS Over recommended operating conditions, power supply = 5 V, TA = 25C, fLO = 2500 MHz at 0 dBm, TRF370315 (unless otherwise noted). RF Output Parameters PARAMETER Voltage gain (1) G TEST CONDITIONS TYP MAX UNIT TRF370315: Output RMS voltage over input I (or Q) RMS voltage -2.892 dB TRF370333: Output RMS voltage over input I (or Q) RMS voltage -1.379 dB P1dB Output compression point IP3 Output IP3 IP2 Output IP2 Measured at fLO + 2 x fBB Carrier feedthrough Sideband suppression (1) MIN 9.5 dBm 21 dBm 63 dBm Unadjusted -38 dBm Unadjusted -47 dBc 18 Single 4-MHz CW baseband input tone, differential-ended 196 VRMS. ELECTRICAL CHARACTERISTICS Over recommended operating conditions, power supply = 5 V, TA = 25C, fLO = 3600 MHz at 0 dBm, TRF370315 (unless otherwise noted). RF Output Parameters PARAMETER Voltage gain (1) G TEST CONDITIONS MIN TYP MAX UNIT TRF370315: Output RMS voltage over input I (or Q) RMS voltage -1.265 dB TRF370333: Output RMS voltage over input I (or Q) RMS voltage 1.529 dB P1dB Output compression point IP3 Output IP3 IP2 Output IP2 Measured at fLO + 2 x fBB Carrier feedthrough Unadjusted Sideband suppression Unadjusted -45 dBc (1) 20 9.5 dBm 23 dBm 63 dBm -41 dBm Single 4-MHz CW baseband input tone, differential-ended 196 VRMS. ELECTRICAL CHARACTERISTICS Over recommended operating conditions, power supply = 5 V, TA = 25C, fLO = 4000 MHz at 0 dBm, TRF370315 (unless otherwise noted). RF Output Parameters PARAMETER Voltage gain (1) G TEST CONDITIONS TYP MAX UNIT TRF370315: Output RMS voltage over input I (or Q) RMS voltage -2.242 dB TRF370333: Output RMS voltage over input I (or Q) RMS voltage 0.543 dB P1dB Output compression point IP3 Output IP3 IP2 Output IP2 Measured at fLO + 2 x fBB Carrier feedthrough Sideband suppression (1) MIN 9 dBm 22 dBm 50 dBm Unadjusted -37 dBm Unadjusted -40 dBc 19 Single 4-MHz CW baseband input tone, differential-ended 196 VRMS. Copyright (c) 2006-2011, Texas Instruments Incorporated 7 TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com TYPICAL CHARACTERISTICS OUTPUT POWER vs BASEBAND VOLTAGE OUTPUT POWER vs FREQUENCY AND TEMPERATURE 0 15 TRF3703-15 TRF3703-33 -1 -40C POUT - Output Power - dBm POUT - Output Power at 1.8 GHz - dBm 10 5 0 -5 -10 -2 -3 -4 85C 25C -5 -6 -7 -8 -15 LO = 0 dB VCC = 5 V -9 -10 -20 0.01 0.1 0 1 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz VBB - Baseband Voltage, Single-Ended, RMS - V G010 Figure 1. Figure 2. OUTPUT POWER vs FREQUENCY AND SUPPLY VOLTAGE OUTPUT POWER vs FREQUENCY AND LO POWER 0 0 5.5 V -1 POUT - Output Power - dBm POUT - Output Power - dBm -1 -2 -3 -4 4.5 V 5V -5 -6 -7 0 dBm -2 5 dBm -3 -4 -5 dBm -5 -8 -6 LO = 0 dB TA = 25C -9 -10 VCC = 5 V TA = 25C -7 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz G011 Figure 3. 8 G012 Figure 4. Copyright (c) 2006-2011, Texas Instruments Incorporated TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) P1dB vs FREQUENCY AND TEMPERATURE P1dB vs FREQUENCY AND SUPPLY VOLTAGE 14 12 LO = 0 dB VCC = 5 V 12 5.5 V 10 10 5V P1dB - dBm P1dB - dBm 8 8 25C 85C -40C 6 4.5 V 6 4 4 2 2 LO = 0 dB TA = 25C 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz f - Frequency - MHz G001 G002 Figure 5. Figure 6. P1dB vs FREQUENCY AND LO POWER TRF370315 OIP3 vs FREQUENCY AND TEMPERATURE 30 12 28 -5 dBm 10 5 dBm 24 8 0 dBm OIP3 - dBm P1dB - dBm 25C 85C 26 6 4 22 20 18 -40C 16 14 2 VCC = 5 V TA = 25C LO = 0 dBm VCC = 5 V 12 10 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz f - Frequency - MHz G014 G003 Figure 7. Copyright (c) 2006-2011, Texas Instruments Incorporated Figure 8. 9 TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) TRF370333 OIP3 vs FREQUENCY AND TEMPERATURE TRF370315 OIP3 vs FREQUENCY AND SUPPLY VOLTAGE 30 30 28 28 26 24 24 22 22 OIP3 - dBm OIP3 - dBm 4.5 V 26 20 18 -40C 16 5V 25C 85C 20 5.5 V 18 16 14 14 LO = 0 dB VCC = 5 V 12 LO = 0 dBm TA = 25C 12 10 10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz f - Frequency - MHz G027 G015 Figure 9. Figure 10. TRF370333 OIP3 vs FREQUENCY AND SUPPLY VOLTAGE TRF370315 OIP3 vs FREQUENCY AND LO POWER 40 30 LO = 0 dB TA = 25C 36 5V 26 4.5 V 32 24 OIP3 - dBm OIP3 - dBm +5 dBm 28 28 24 22 -5 dBm 20 0 dBm 18 16 20 14 16 5.5 V VCC = 5 V TA = 25C 12 12 10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz G028 Figure 11. 10 G013 Figure 12. Copyright (c) 2006-2011, Texas Instruments Incorporated TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) TRF370333 OIP3 vs FREQUENCY AND LO POWER UNADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND TEMPERATURE 40 0 36 SS - Unadjusted Sideband Suppression - dBc VCC = 5 V TA = 25C 0 dBm OIP3 - dBm 32 28 24 +5 dBm 20 -5 dBm 16 12 LO = 0 dB POUT = -3 dBm VCC = 5 V -10 -20 -30 85C -40 -50 -40C -60 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 f - Frequency - MHz 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz G029 G007 Figure 13. Figure 14. UNADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND SUPPLY VOLTAGE UNADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND LO POWER 0 0 LO = 0 dB POUT = -3 dBm TA = 25C -10 SS - Unadjusted Sideband Suppression - dBc SS - Unadjusted Sideband Suppression - dBc 25C -20 -30 5V -40 5.5 V -50 4.5 V -60 VCC = 5 V POUT = -3 dBm TA = 25C -10 -20 -30 -5 dBm 0 dBm -40 -50 5 dBm -60 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz G008 Figure 15. Copyright (c) 2006-2011, Texas Instruments Incorporated G009 Figure 16. 11 TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) ADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND TEMPERATURE ADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND TEMPERATURE -20 -30 SS - Adjusted Sideband Suppression - dBc SS - Adjusted Sideband Suppression - dBc -20 Adj at 942.6 MHz VCC = 5 V -40 -50 -40C 25C -60 -70 -30 Adj at 1900 MHz VCC = 5 V -40 -50 85C -60 -40C 25C -70 85C -80 900 920 940 960 980 -80 1850 1000 1870 1890 1910 1930 G017 G016 Figure 17. Figure 18. ADJUSTED SIDEBAND SUPPRESSION vs FREQUENCY AND TEMPERATURE NOISE AT 13-MHz OFFSET (dBm/Hz) vs FREQUENCY AND SUPPLY VOLTAGE -154 Adj at 2140 MHz VCC = 5 V -156 Noise at 13-MHz Offset - dBm/Hz SS - Adjusted Sideband Suppression - dBc -20 -30 -40 85C -50 -40C -60 -70 POUT = -5 dBm LO = 5 dBm TA = 25C 5.5 V -158 -160 5V -162 -164 4.5 V -166 25C -80 2100 2120 2140 2160 2180 2200 -168 0.0 0.5 1.0 1.5 2.0 2.5 3.5 4.0 G019 G018 Figure 19. 3.0 f - Frequency - GHz f - Frequency - MHz 12 1950 f - Frequency - MHz f - Frequency - MHz Figure 20. Copyright (c) 2006-2011, Texas Instruments Incorporated TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) NOISE AT 13-MHz OFFSET (dBm/Hz) vs FREQUENCY AND TEMPERATURE NOISE AT 13-MHz OFFSET (dBm/Hz) vs FREQUENCY AND TEMPERATURE -154 -154 85C -156 Noise at 13-MHz Offset - dBm/Hz Noise at 13-MHz Offset - dBm/Hz -156 -158 25C -160 -162 -164 -40C -166 -168 0.0 POUT = 0 dBm LO = 5 dBm VCC = 5 V 0.5 1.0 85C -158 25C -160 -162 -164 1.5 2.0 2.5 3.0 3.5 -168 0.0 4.0 -40C POUT = -5 dBm LO = 5 dBm VCC = 5 V -166 0.5 1.0 1.5 2.0 2.5 3.0 3.5 G021 G020 Figure 21. Figure 22. NOISE AT 13-MHz OFFSET (dBm/Hz) vs FREQUENCY AND TEMPERATURE UNADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND SUPPLY VOLTAGE -154 0 POUT = -10 dBm LO = 5 dBm VCC = 5 V -158 CS - Unadjusted Carrier Feedthrough - dBm Noise at 13-MHz Offset - dBm/Hz -156 85C -160 25C -162 -164 -166 -40C -168 0.0 4.0 f - Frequency - GHz f - Frequency - GHz LO = 0 dB TA = 25C -10 -20 5V -30 5.5 V -40 -50 4.5 V -60 -70 -80 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 f - Frequency - GHz 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz G022 Figure 23. Copyright (c) 2006-2011, Texas Instruments Incorporated G025 Figure 24. 13 TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) UNADJUSTED CARRIER FEEDTHROUGH vs FREQUENCY AND TEMPERATURE CS - Unadjusted Carrier Feedthrough - dBm 0 LO = 0 dB VCC = 5 V -10 -20 -30 85C -40 -50 25C -60 -40C -70 -80 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f - Frequency - MHz G026 Figure 25. 14 Copyright (c) 2006-2011, Texas Instruments Incorporated TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com APPLICATION INFORMATION AND EVALUATION BOARD Basic Connections * * * * * * * * * See Figure 26 for proper connection of the TRF3703315 and TRF370333 modulator. Connect a single power supply (4.5 V-5.5 V) to pins 18 and 24. These pins should be decoupled as shown on pins 4, 5, 6, and 7. Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND. Connect a single-ended LO source of desired frequency to LOP (amplitude between -5 dBm and 12 dBm). This should be ac-coupled through a 100-pF capacitor. Terminate the ac-coupled LON with 50 to GND. Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q. The differential baseband inputs should be set to the proper level, 3.3 V for the TRF370333 or 1.5 V for the TRF370315. RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO baseband signal. This pin should also be ac-coupled through a 100-pF capacitor. All NC pins can be left floating. ESD Sensitivity RF devices may be extremely sensitive to electrostatic discharge (ESD). To prevent damage from ESD, devices should be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the rated level. Rated ESD levels should also not be exceeded while the device is installed on a printed circuit board (PCB). Follow these guidelines for optimal ESD protection: * Low ESD performance is not uncommon in RF ICs; see the Absolute Maximum Ratings table. Therefore, customers' ESD precautions should be consistent with these ratings. * The device should be robust once assembled onto the PCB unless external inputs (connectors, etc.) directly connect the device pins to off-board circuits. Copyright (c) 2006-2011, Texas Instruments Incorporated 15 TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com J3 IN J4 IP 1 1 SMA_END 2 3 4 5 5 4 3 2 SMA_END W1 2POS_JUMPER W2 2POS_JUMPER C6 + R2 R3 0 0 C5 1000 pF C7 + 4.7uF 19 GND GND 20 21 IP NC GND GND NC 8 5 4 3 2 7 100 pF J5 QN 1 R5 0 0 16 R1 15 0 C3 1 SMA_END 100 pF C8 C9 0.1 mF (Note 1) 0.1 mF (Note 1) 14 13 J6 QP 1 SMA_END 2 3 4 5 5 4 3 2 SMA_END R4 J7 RF_OUT 17 GND NC 18 2 3 4 5 LON NC 1 SMA_END RF_OUT U1 TRF3703 1000 pF 12 6 LOP GND C2 GND 11 5 J2 LON GND QP 4 VccMOD QN 3 NC 9 5 4 3 2 2 10 1 100 pF GND SMA_END IN 1 GND VccLO C1 23 24 J1 LOP 22 4.7 mF C4 S0214-01 (1) Do not install. Figure 26. TRF3703 EVM Schematic 16 Copyright (c) 2006-2011, Texas Instruments Incorporated TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com Figure 27 shows the top view of the TRF3703 EVM board. GND +5 V +5 V BBIN GND BBIP LOP RF_OUT LON 50 W BBQP BBQN K001 Figure 27. TRF3703 EVM Board Layout Table 1. Bill of Materials for TRF3703 EVM Value Footprint QTY Part Number Vendor Digi-Key Number REF DES Tantalum 4.7-F, 10-V, 10% capacitor 3216 2 T491A475K010AS KEMET 399-1561-1-ND C6, C7 1000-pF, 50-V, 5% capacitor 603 2 ECJ-1VC1H102J Panasonic PCC2151CT-ND C4, C5 100-pF, 50-V, 5% capacitor 603 3 ECJ-1VC1H101J Panasonic PCC101ACVCT-ND C1, C2, C3 Capacitor 603 0 0- resistor, 1/10-W, 5% 603 5 ERJ-3GEY0R00V Panasonic P0.0GCT-ND R1, R2, R3, R4, R5 Copyright (c) 2006-2011, Texas Instruments Incorporated Not Installed C8, C9 17 TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com Table 1. Bill of Materials for TRF3703 EVM (continued) Value Footprint TRF3703 QTY Part Number Vendor Digi-Key Number TI REF DES 24-QFN-PP4X4MM 1 SMA connectors SMA_END_ SMALL 6 16F3627 Newark 142-0711-821 J1, J2, J3, J4, J5, J6, J7 2POS_HEADER 2POS_JUMP 2 HTSW-150-07-L-S SAMTEC N/A W1, W2 Not Installed U1 GSM Applications The TRF370315 and TRF370333 are suited for GSM applications because of the high linearity and low noise level over the entire recommended operating range. These devices also have excellent EVM performance, which makes them ideal for the stringent GSM/EDGE applications. WCDMA Applications The TRF370315 and TRF370333 are also optimized for WCDMA applications where both adjacent-channel power ratio (ACPR) and noise density are critically important. Using Texas instruments' DAC568X series of high-performance digital-to-analog converters as depicted in Figure 28, excellent ACPR levels were measured with one-, two-, and four-WCDMA carriers. See Electrical Characteristics, fLO = 2140 MHz for exact ACPR values. 16 TRF3703 I/Q Modulator DAC5687 RF_OUT 16 CLK1 CLK2 VCXO TRF3761 PLL LO Generator CDCM7005 Clock Gen Ref Osc B0176-01 Figure 28. Typical Transmit Setup Block Diagram 18 Copyright (c) 2006-2011, Texas Instruments Incorporated TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com DEFINITION OF SPECIFICATIONS Unadjusted Carrier Feedthrough This specification measures the amount by which the local oscillator component is attenuated in the output spectrum of the modulator relative to the carrier. This further assumes that the baseband inputs delivered to the pins of the TRF370315 and TRF370333 are perfectly matched to have the same dc offset (VCM). This includes all four baseband inputs: I, I, Q, and Q. This is measured in dBm. Adjusted (Optimized) Carrier Feedthrough This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively adjusted around their theoretical value of VCM to yield the maximum suppression of the LO component in the output spectrum. This is measured in dBm. Unadjusted Sideband Suppression This specification measures the amount by which the unwanted sideband of the input signal is attenuated in the output of the modulator, relative to the wanted sideband. This further assumes that the baseband inputs delivered to the modulator input pins are perfectly matched in amplitude and are exactly 90 out of phase. This is measured in dBc. Adjusted (Optimized) Sideband Suppression This differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjusted around their theoretical values to maximize the amount of sideband suppression. This is measured in dBc. Suppressions Overtemperature This specification assumes that the user has gone though the optimization process for the suppression in question, and set the optimal settings for the I, Q inputs. This specification then measures the suppression when temperature conditions change after the initial calibration is done. Figure 29 shows a simulated output and illustrates the respective definitions of various terms used in this data sheet. The graph assumes a baseband input of 50 kHz. 10 POUT 0 P - Power - dBm -10 -20 3RD LSB (dBc) SBS (dBc) 3RD LSB LSB (Undesired) 2ND USB (dBc) C (dBm) -30 -40 -50 -60 -70 2ND LSB -80 -200 -150 -100 -50 USB (Desired) 2ND USB Carrier 0 3RD USB 50 100 150 200 f - Frequency Offset - kHz (Relative to Carrier) G024 Figure 29. Graphical Illustration of Common Terms Copyright (c) 2006-2011, Texas Instruments Incorporated 19 TRF370315 TRF370333 SLWS184J - MARCH 2006 - REVISED MAY 2011 www.ti.com REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision I (July, 2010) to Revision J Page * Changed voltage gain specifications for fLO = 350-MHz performance data ......................................................................... 4 * Updated voltage gain specifications for fLO = 400-MHz performance data .......................................................................... 4 * Revised voltage gain specifications for fLO = 900-MHz performance data ........................................................................... 5 * Changed voltage gain specifications for fLO = 1800-MHz performance data ....................................................................... 5 * Revised voltage gain specifications for fLO = 1960-MHz performance data ......................................................................... 6 * Updated voltage gain specifications for fLO = 2140-MHz performance data ........................................................................ 6 * Revised voltage gain specifications for fLO = 2500-MHz performance data ......................................................................... 7 * Changed voltage gain specifications for fLO = 3600-MHz performance data ....................................................................... 7 * Updated voltage gain specifications for fLO = 4000-MHz performance data ........................................................................ 7 * Replaced Figure 1 ................................................................................................................................................................ 8 Changes from Revision H (January, 2010) to Revision I Page * Changed document title to reflect 0.35-GHz minimum operating level ................................................................................ 1 * Updated Description section to reflect 350-MHz minimum operation ................................................................................... 1 * Changed LO frequency range minimum specification from 0.4 GHz to 0.35 GHz ............................................................... 4 * Added Electrical Characteristics table for fLO = 350-MHz performance data ....................................................................... 4 20 Copyright (c) 2006-2011, Texas Instruments Incorporated PACKAGE OPTION ADDENDUM www.ti.com 16-Apr-2011 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) TRF370315IRGER ACTIVE VQFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TRF370315IRGET ACTIVE VQFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TRF370333IRGER ACTIVE VQFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TRF370333IRGERG4 ACTIVE VQFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TRF370333IRGET ACTIVE VQFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TRF370333IRGETG4 ACTIVE VQFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Samples (Requires Login) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 16-Feb-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing TRF370315IRGER VQFN RGE 24 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 3000 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q1 TRF370315IRGET VQFN RGE 24 250 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q1 TRF370333IRGER VQFN RGE 24 3000 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2 TRF370333IRGET VQFN RGE 24 250 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 16-Feb-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TRF370315IRGER VQFN RGE 24 3000 338.1 338.1 20.6 TRF370315IRGET VQFN RGE 24 250 338.1 338.1 20.6 TRF370333IRGER VQFN RGE 24 3000 338.1 338.1 20.6 TRF370333IRGET VQFN RGE 24 250 338.1 338.1 20.6 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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