TRANSISTOR MODULE SQD400AA120 UL;E76102 M SQD400AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for simple heatsink construction. 113max. 3-M4 4-6.5 DC current gain. monuting base EX C BX B High 90.0max. 700.2 10 10 12 IC=400A, Low VCEX=1200V saturation voltage for higher efficiency 930.2 E 2-M8 Isolated Applications Motor ControlVVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application BX E 21.5 C 23.0 29.0 29.5 37.0max. 30.0max. EX B UnitA Maximum Ratings Symbol Tj25 unless otherwise specified Item Conditions VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage IC -IC Unit 1200 V VBE-2V 1200 V IC80AIB2-18A 1200 V 10 V Collector Current 400 A Reverse Collector Current 400 A 20 A VCEXSUS Collector-Emitter Sustaning Voltage VEBO Ratings SQD400AA120 Emitterr-Base Voltage IB Base Current PT Total power dissipation Tj Junction Temperature Tstg Storage Temperature VISO Isolation Voltage Mounting Torque TC25 3120 W -40 to 150 -40 to 125 2500 V A.C. 1minute MoutingM6 Recommended Value 2.5-3.925-40 4.748 TerminalM8 Recommended Value 8.8-10 90-105 11115 TerminalM4 Recommended Value 1.0-1.410-14 1.515 Mass Typical Value Nm (fB) 670 g Electrical Characteristics Symbol Item Conditions Ratings Min. Max Unit ICBO Collector Cut-off Current VCB1200V 5.00 mA IEBO Emitter Cut-off Current VEB10V 1000 mA hFE DC Current Gain Ic400AVCE2.8V Ic400AVCE5V 75 100 VCEsat Collector-Emitter Sturation Voltage Ic400AIB8A 3.0 V VBEsat Base-Emitter Saturation Voltage Ic400AIB8A 3.5 V ton ts On Time Switching Time tf VECO Rthj-c Storage Time Fall Time 3.0 Vcc600VIc400A IB18AIB2-8A 17.0 Collector-Emitter Reverse Voltage Ic-400A 1.8 Thermal Impedance (junction to case) Transistor part 0.04 Diode part 0.16 SanRex s 3.0 V /W (R) 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com http://store.iiic.cc/ SQD400AA120 Collector-Emitter Voltage V V Base-Emitter Voltage VBEV D.C. Current Gain VCE5.0V VCE2.8V Typical DC Current Gain hFE 3 Tj125 Tj25 Tj25 Tj125 IB8.0A Typical VBE sat VCE sat Saturation Characteristics Forward Bias Safe Operating Area Pulse Wide Tc25 Non-Repetitive Collector Reverse Current -IcA Derating Factor% Non-Repetitive IB2-8A IB2-16A Tj125 Transient Thermal Impedance j-c/W Switching Time ton tf tss ts Typical Tj25 Tj125 Maximum Transient Thermal Impedance Characteristics Junction to case Transistor Part Max. 100msec10sec 1msec100msec - tf IB18.0A IB2-8.0A VCC600V Tj25 ton - Emitter-Collector Voltage VECOV Typical Collector Current Vs Switching Time Forward Voltage of Free Wheeling Diode Case Temperature Collector-Emitter Voltage VCEV IS/B Limited Collector Current Derating Factor Collector-Emitter Voltage VCEV Reverse Bias Safe Operating Area 50 10 s 0 20 s 0 s Collector Current IcA Collector Current IcA 3 Collector Current IcA Collector Current IcA Collector Current IcA - - - - Time tsec SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com http://store.iiic.cc/