DATA SHEET NEC / SILICON EPITAXIAL DIODES SILICON SWITCHING DIODES 1$$220,1SS221 HIGH SPEED SWITCHING MINI MOLD PACKAGE DIMENSIONS in millimeters FEATURES @ Low capacitance: C;=4.0 pF MAX. High speed switching: t,, =3.0 ns MAX. 2 28202 @ Wide applications including switching, limitter, clipper. 9 15 |, |0.657815 + 3 | i ABSOLUTE MAXIMUM RATINGS 3 72 Maximum Voltages and Currents (Tg= 25 c) Oo a oF 188220 188221 3 1 ! 3 Peak Reverse Voltage Vam 70 100 Vv +i ++ 3 DC Reverse Voltage Va 70 100 Vv Peak Forward Current lem 300 300 mA Marking Average Rectified Current lo 100 100 mA S DC Forward Current Ip 100 100 mA t # Maximum Temperatures a Q | | = Junction Temperature Tj 150 C i T = Storage Temperature Range Tstg 55 to +150 ae Connection Diagram S Thermal Resistance (Top View) Junction to Ambient R th (ja) 0.67 C/mW Anode 2 C Marking 3 188220 : A13 188221 : A14 1 Cathode N.C. ELECTRICAL CHARACTERISTICS (Tg =25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS VF4 720 850 mV Ip =10 mA Forward Voltage VED | ~ | 850 1000 mV ip =50 mA VE3 950 | 1200 | mv Iz =100 mA 1$$220 1.0 LA VR=70V Reverse Current IR 155221 1.0 uA VR=100 V Capacitance Cy 2.0 4.0 pF VR =0, f= 1.0 MHz Reverse Recovery Time trr 3.0 ns 'F e100 See Yet Circuit The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Bocument No. D16318EJ3VODS00 (3rd edition) (Previous No. DC-1056A) Date Published July 2002 N CP(K) Printed in Japan NEC Corporation 1985NEC TYPICAL CHARACTERISTICS (T, = 25 C) Ip Forward CurrentmaA AVeForward Voltage Temperature Coefficient mV/C FORWARD CURRENT vs. FORWARD VOLTAGE 1000 500 200 100 50 20 10 50 2.0 1.0 05 0.2 0.1 0.05 0.02 001 0 Vp Forward Voltage V FORWARD VOLTAGE TEMPERATURE COEFFICIENT vs FORWARD CURRENT 3.0 | | | mY 29 mM SN SN PM 1.0 0 0102 05 10 20 6.010 20 60 100 {pF Forward Current mA 0.2 0.4 0.6 08 1.0 1.2 Ip-Reverse Current pA CtTerminal Capacitance pF 1$$220,1SS221 REVERSE CURRENT vs. REVERSE VOLTAGE 10 5.0 2.0 10 05 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0005 0.0002 0.0001 0 Tax 100 Cc 10 20 30 40 50 60 8670 VpReverse Voitage Vv TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 3.0 f=1.0 MHz Ta=25 C + NS o o 1 2 4 6 810 20 630 Vp~Reverse VoltageV Data Sheet D16318EJU3VODSNEC 1$$220,1SS221 SWITCHING CHARACTERISTICS TEST CIRCUIT Reverse recovery time : t,, Circuit Capacitance C<1 pF prt ypt ttc t tp r ' Ip=- 10 mA t + a 7 t Rg50 & [ 2 Sampling 10 % ig tr : tps0.6 ns pulse i oscilloscope tp +100 ns Generator Li-f 2 Ri=50 2 3 | Duty Cycle=5 % ty30.35 ns 90 % ry ; | T Vp : ipp =O.1 lr VoVp t Ve input signal output signal Test circuit Wave forms Ip =10 mA, Va =6.0 V Data Sheet D16318EJ3VODS 3NEC 1$S$220,1SS221 The information in this document is current as of July, 2002. 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