7MBR100SA060 - Fuji Electric

7MBR100SB060 IGBT Modules

IGBT MODULE (S series)

600V / 100A / PIM

Features

· Low VCE(sat)

· Compact package

· P.C. board mount

· Converter diode bridge, Dynamic brake circuit

Applications

· Inverter for motor drive

· AC and DC servo drive amplifier

· Uninterruptible power supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless without specified)

Item Symbol Condition Rat ing Unit

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power dissipation

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power dissipation

Repetitive peak reverse voltage

Average output current

Surge current (Non-Repetitive)

I2t (Non-Repetitive)

Converter Brake Inverter

Operating junction temperature

Storage temperature

Isolation between terminal and copper base *2

voltage between thermistor and others *3

Mounting screw torque

VCES

VGES

IC

ICP

-IC

PC

VCES

VGES

IC

ICP

PC

VRRM

IO

IFSM

I2t

Tj

Tstg

Viso

Continuous

1ms

1 device

Continuous

1ms

1 device

50Hz/60Hz sine wave

Tj=150°C, 10ms

half sine wave

AC : 1 minute

600

±20

100

200

100

400

600

±20

50

100

200

600

800

100

700

2450

+150

-40 to +125

AC 2500

3.5 *1

V

A

W

V

A

W

V

A

A2s

°C

V

N·m

*1 Recommendable value : 2.5 to 3.5 N·m (M5)

*2 All terminals should be connected together when isolation test will be done.

*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24

should be connected together and shorted to copper base.

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Electrical characteristics (Tj=25°C unless otherwise specified)

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off

Forward on voltage

Reverse recovery time of FRD

Zero gate voltage collector current

Gate-Emitter leakage current

Collector-Emitter saturation voltage

Turn-on time

Turn-off time

Reverse current

Forward on voltage

Reverse current

Resistance

B value

Thermistor Converter Brake Inverter

ICES

IGES

VGE(th)

VCE(sat)

Cies

ton

tr

tr(i)

toff

tf

VF

trr

ICES

IGES

VCE(sat)

ton

tr

toff

tf

IRRM

VFM

IRRM

R

B

VCE=600V, VGE=0V

VCE=0V, VGE=±20V

VCE=20V, IC=100mA

VGE=15V, Ic=100A chip

terminal

VGE=0V, VCE=10V, f=1MHz

VCC=300V

IC=100A

VGE=±15V

RG=24Ω

IF=100A chip

terminal

IF=100A

VCES=600V, VGE=0V

VCE=0V, VGE=±20V

IC=50A, VGE=15V chip

terminal

VCC=300V

IC=50A

VGE=±15V

RG=51Ω

VR=600V

IF=100A chip

terminal

VR=800V

T=25°C

T=100°C

T=25/50°C

1.0

0.2

8.5

2.6

1.2

0.6

1.0

0.35

2.7

0.3

1.0

0.2

2.5

1.2

0.6

1.0

0.35

1.0

1.5

1.0

10000

5.5 7.8

mA

µA

V

pF

µs

V

µs

mA

µA

V

µs

mA

V

mA

Ω

K

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Inverter IGBT

Inverter FWD

Brake IGBT

Converter Diode

With thermal compound

0.31

0.70

0.63 °C/W

0.47

0.05

Thermal resistance ( 1 device ) Rth(j-c)

Contact thermal resistance * Rth(c-f)

Thermal resistance Characteristics

IGBT Modules 7MBR100SB060

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

1.8

2.15

0.45

0.25

0.08

0.40

0.05

1.6

1.95

1.8

2.05

0.45

0.25

0.40

0.05

1.1

1.2

5000

465 495 520

3305 3375 3450

8 9

[Thermistor]

[Converte r] 21(P)

23(N)

1(R) 2(S) 3(T)

[B r ak e] [Inve r t e r ]

22(P 1)

7(B)

14(G b)

24(N 1)

20(G u)

19(Eu)

13(G x)

18(G v)

17(Ev)

4(U)

12(G y)

5(V) 6(W )

16(G w )

11(G z) 10(E n)

15(Ew )

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IGBT Modules 7MBR100SB060

Characteristics (Representative)

0 1 2 3 4 5

0

50

100

150

200

250

10V

12V

15V

VGE= 20V

[ Inverter ]

Collector current vs. Collector-Emitter voltage

Tj= 25 oC (typ.)

Collector current : Ic [ A ]

Collector - Emitter voltage : VCE [ V ]

0 1 2 3 4 5

0

50

100

150

200

250

10V

12V

15V

VGE= 20V

[ Inverter ]

Collector current vs. Collector-Emitter voltage

Tj= 125 oC (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

0 1 2 3 4

0

50

100

150

200

250

Tj= 25 oC Tj= 125 oC

[ Inverter ]

Collector current vs. Collector-Emitter voltage

VGE=15V (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

5 10 15 20 25

0

2

4

6

8

10

Ic= 50A

Ic=100A

Ic=200A

[ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25 oC (typ.)

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

0 5 10 15 20 25 30 35

500

1000

5000

10000

50000

[ Inverter ]

Capacitance vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25 oC

Capacitance : Cies, Coes, Cres [ pF ]

Collector - Emitter voltage : VCE [ V ]

Coes

Cres

Cies

0 100 200 300 400 500 600

0

100

200

300

400

500

[ Inverter ]

Dynamic Gate charge (typ.)

Vcc=300V, Ic=100A, Tj= 25 oC

Gate charge : Qg [ nC ]

Collector - Emitter voltage : VCE [ V ]

0

5

10

15

20

25

Gate - Emitter voltage : VGE [ V ]

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IGBT Modules 7MBR100SB060

Vcc=300V, VGE=±15V, Rg=24Ω, Tj=25°C Vcc=300V, VGE=±15V, Rg=24Ω, Tj=125°C

Vcc=300V, Ic=100A, VGE=±15V, Tj=25°C Vcc=300V, VGE=±15V, Rg=24Ω

Vcc=300V, Ic=100A, VGE=±15V, Tj=125°C +VGE=15V , -VGE<15V, Rg>24Ω, Tj<125°C

= = =

0 50 100 150 200

10

100

1000

ton

tr

toff

tf

[ Inverter ]

Switching time vs. Collector current (typ.)

Switching time : ton, tr, toff, tf [ nsec ]

Collector current : Ic [ A ]

0 50 100 150 200

10

100

1000

tf

tr

ton

toff

[ Inverter ]

Switching time vs. Collector current (typ.)

Collector current : Ic [ A ]

Switching time : ton, tr, toff, tf [ nsec ]

10 100 300

10

100

1000

5000

toff

ton

tr

tf

[ Inverter ]

Switching time vs. Gate resistance (typ.)

Gate resistance : Rg [ Ω ]

Switching time : ton, tr, toff, tf [ nsec ]

0 50 100 150 200

0

2

4

6

8

10

Err(25 oC)

Eoff(25 oC)

Eon(25 oC)

Err(125 oC)

Eoff(125 oC)

Eon(125 oC)

[ Inverter ]

Switching loss vs. Collector current (typ.)

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Collector current : Ic [ A ]

10 100 300

0

5

10

15

20

[ Inverter ]

Switching loss vs. Gate resistance (typ.)

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Gate resistance : Rg [ Ω ]

Eon

Err

Eoff

0 200 400 600 800

0

50

100

150

200

250

[ Inverter ]

Reverse bias safe operating area

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

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IGBT Modules 7MBR100SB060

Vcc=300V, VGE=±15V, Rg=24Ω

0 1 2 3

0

50

100

150

200

250

Tj=25 oC

Tj=125 oC

[ Inverter ]

Forward current vs. Forward on voltage (typ.)

Forward current : IF [ A ]

Forward on voltage : VF [ V ]

0 50 100 150 200

10

100

300

Irr(125 oC)

Irr(25 oC)

trr(25 oC)

trr(125 oC)

[ Inverter ]

Reverse recovery characteristics (typ.)

Forward current : IF [ A ]

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

0.0 0.4 0.8 1.2 1.6 2.0

0

50

100

150

200

250

Tj= 25 oC Tj= 125 oC

[ Converter ]

Forward current vs. Forward on voltage (typ.)

Forward on voltage : VFM [ V ]

Forward current : IF [ A ]

0.001 0.01 0.1 1

0.01

0.1

1

5

IGBT[Brake]

Transient thermal resistance

Thermal resistanse : Rth(j-c) [

o

C/W ]

Pulse width : Pw [ sec ]

FWD[Inverter]

Conv. Diode

IGBT[Inverter]

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.1

1

10

100

200

[ Thermistor ]

Temperature characteristic (typ.)

Temperature [ oC ]

Resistance : R [ k Ω ]

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IGBT Modules 7MBR100SB060

0 1 2 3 4 5

0

20

40

60

80

100

120

10V

12V

15VVGE= 20V

[ Brake ]

Collector current vs. Collector-Emitter voltage

Tj= 25 oC (typ.)

Collector current : Ic [ A ]

Collector - Emitter voltage : VCE [ V ]

0 1 2 3 4 5

0

20

40

60

80

100

120

10V

12V

15V

VGE= 20V

[ Brake ]

Collector current vs. Collector-Emitter voltage

Tj= 125 oC (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

0 1 2 3 4

0

20

40

60

80

100

120

Tj= 25 oC Tj= 125 oC

[ Brake ]

Collector current vs. Collector-Emitter voltage

VGE=15V (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

5 10 15 20 25

0

2

4

6

8

10

Ic= 25A

Ic= 50A

Ic=100A

[ Brake ]

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25 oC (typ.)

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

0 5 10 15 20 25 30 35

100

1000

10000

20000

[ Brake ]

Capacitance vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25 oC

Capacitance : Cies, Coes, Cres [ pF ]

Collector - Emitter voltage : VCE [ V ]

Coes

Cres

Cies

0 50 100 150 200 250 300

0

100

200

300

400

500

[ Brake ]

Dynamic Gate charge (typ.)

Vcc=300V, Ic=50A, Tj= 25 oC

Gate charge : Qg [ nC ]

Collector - Emitter voltage : VCE [ V ]

0

5

10

15

20

25

Gate - Emitter voltage : VGE [ V ]

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IGBT Modules 7MBR100SB060

24 23 22

21 20 19 18 17 16 15 14 10

9

8

7

1 65

4

32

122

±1

110

±0.3

94.5

±0.3

99.6

±0.3

13.09 15.24 19.05 19.05 15.24

14.995 15.24 15.24 15.24 15.24 15.24 22.86

8-R2.25

±0.3

4-ø5.5

±0.3

62

±1

50

±0.3

57.5

±0.3

39.9

±0.3

15.24

15.475

3.81

19.697 11.43

11.43

4.055

4.198 11.665

20.5

±1

17

±1

3.5

±0.5

2.9

±0.3

1.1

±0.3

6.5

±0.5

1

±0.2

A A

11.5

+0.5

0

11.5

+0.5

0

Shows theory dimensions

ø2.5

±0.1

ø2.1

±0.1

6

±0.3

1.5

±0.3

Section A-A

1.15

±0.2

ø0.4

0.8

±0.2

3.81 4=15.24

M712

Outline Drawings, mm

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