7MBR100SB060 IGBT Modules IGBT MODULE (S series) 600V / 100A / PIM Features * Low VCE(sat) * Compact package * P.C. board mount * Converter diode bridge, Dynamic brake circuit Applications * Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Symbol Brake Inverter VCES VGES IC Collector current ICP -IC Collector power dissipation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power dissipation PC Repetitive peak reverse voltage VRRM Repetitive peak reverse voltage VRRM Average output current IO Surge current (Non-Repetitive) IFSM I 2t (Non-Repetitive) I2 t Operating junction temperature Tj Storage temperature Tstg Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Converter Condition Collector-Emitter voltage Gate-Emitter voltage Continuous 1ms 1 device Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. http://store.iiic.cc/ Rat ing 600 20 100 200 100 400 600 20 50 100 200 600 800 100 700 2450 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A A A W V V A A W V V A A A 2s C C V V N*m 7MBR100SB060 IGBT Modules Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.2 5.5 7.8 8.5 1.8 2.15 2.6 10000 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr tr(i) toff tf VF Turn-off Brake Forward on voltage Converter IF=100A 0.45 0.25 0.08 0.40 0.05 1.6 1.95 chip terminal Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current Forward on voltage ton tr toff tf IRRM VFM Reverse current Resistance IRRM R B value B IF=100A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=50A, VGE=15V chip terminal VCC=300V IC=50A VGE=15V RG=51 VR=600V IF=100A chip terminal VR=800V T=25C T=100C T=25/50C Symbol Condition Turn-off time Thermistor VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=100mA VGE=15V, Ic=100A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=100A VGE=15V RG=24 1.8 2.05 0.45 0.25 0.40 0.05 1.1 1.2 465 3305 mA A V V pF s 1.2 0.6 1.0 0.35 V 2.7 0.3 1.0 0.2 s mA A V 2.5 1.2 0.6 1.0 0.35 1.0 1.5 1.0 5000 495 3375 s mA V mA 520 3450 K Thermal resistance Characteristics Item Min. Thermal resistance ( 1 device ) Contact thermal resistance Rth(j-c) * Rth(c-f) Characteristics Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Unit 0.31 0.70 0.63 0.47 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [B ra k e ] [Thermistor] [In v er ter ] 2 2 (P 1 ) 8 2 0 (G u) 1(R) 2(S) 3(T) 1 8 (G v) 1 9 (E u ) 7 (B ) 1 4 (G b) 1 6 (G w ) 1 7 (E v ) 4 (U ) 1 3 (G x) 1 5 (E w ) 5 (V ) 1 2 (G y) 6 (W ) 1 1 (G z) 1 0 (E n ) 23(N) 2 4 (N 1 ) http://store.iiic.cc/ 9 C/W 7MBR100SB060 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage [ Inverter ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 250 12V 15V VGE= 20V 15V VGE= 20V 12V 200 Collector current : Ic [ A ] 200 Collector current : Ic [ A ] Tj= 125 C (typ.) 250 150 100 150 100 10V 50 50 10V 0 0 0 1 2 3 4 5 0 1 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) o Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ] 150 100 50 0 6 4 Ic=200A 2 Ic=100A Ic= 50A 0 0 1 2 3 4 5 10 Collector - Emitter voltage : VCE [ V ] 20 25 [ Inverter ] Dynamic Gate charge (typ.) [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 15 Gate - Emitter voltage : VGE [ V ] o Vcc=300V, Ic=100A, Tj= 25 C 10000 Collector - Emitter voltage : VCE [ V ] 50000 Cies 5000 o C 500 25 400 20 300 15 200 10 100 5 1000 Coes Cres 500 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 100 200 300 400 Gate charge : Qg [ nC ] http://store.iiic.cc/ 500 0 600 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 5 o o Tj= 25 C 4 Tj= 25 C (typ.) 10 200 3 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage 250 Capacitance : Cies, Coes, Cres [ pF ] 2 Collector - Emitter voltage : VCE [ V ] 7MBR100SB060 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24, Tj=125C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24, Tj=25C 1000 1000 ton toff tr tr Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] ton toff 100 tf 100 10 tf 10 0 50 100 150 200 0 50 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) 150 200 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, Ic=100A, VGE=15V, Tj=25C 5000 100 Collector current : Ic [ A ] Vcc=300V, VGE=15V, Rg=24 10 ton o 100 8 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 tf o Eoff(125 C) o Eon(25 C) 6 o Eoff(25 C) 4 2 o Err(125 C) o Err(25 C) 10 0 10 100 Gate resistance : Rg [ 300 0 50 ] 100 150 200 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) [ Inverter ] Reverse bias safe operating area Vcc=300V, Ic=100A, VGE=15V, Tj=125C 20 +VGE=15V, -VGE= <15V, Rg>24, Tj<125C = = 250 Eon 200 15 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] Eon(125 C) toff tr 10 Eoff 150 100 5 50 Err 0 0 10 100 Gate resistance : Rg [ 300 ] 0 200 400 600 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 800 IGBT Modules 7MBR100SB060 [ Inverter ] Reverse recovery characteristics (typ.) [ Inverter ] Forward current vs. Forward on voltage (typ.) Vcc=300V, VGE=15V, Rg=24 250 300 200 o Tj=125 C o Reverse recovery current : Irr [ A ] Forward current : IF [ A ] 150 100 50 Reverse recovery time : trr [ nsec ] trr(125 C) o Tj=25 C 0 100 o Irr(125 C) o trr(25 C) o Irr(25 C) 10 0 1 2 3 0 50 Forward on voltage : VF [ V ] 100 150 200 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 250 o o Tj= 25 C Tj= 125 C 1.2 1.6 Forward current : IF [ A ] 200 150 100 50 0 0.0 0.4 0.8 2.0 Forward on voltage : VFM [ V ] [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 200 5 1 FWD[Inverter] o Thermal resistanse : Rth(j-c) [ C/W ] 100 Resistance : R [ k ] IGBT[Brake] Conv. Diode IGBT[Inverter] 0.1 10 1 0.01 0.001 0.01 0.1 1 0.1 -60 Pulse width : Pw [ sec ] -40 -20 0 20 40 60 Temperature [ http://store.iiic.cc/ 80 o C] 100 120 140 160 180 7MBR100SB060 IGBT Modules [ Brake ] Collector current vs. Collector-Emitter voltage [ Brake ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 120 15V 15V VGE= 20V 12V 100 100 80 80 Collector current : Ic [ A ] Collector current : Ic [ A ] VGE= 20V Tj= 125 C (typ.) 120 60 40 10V 20 12V 60 40 10V 20 0 0 0 1 2 3 4 5 0 1 Collector - Emitter voltage : VCE [ V ] 2 [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 5 o Tj= 25 C (typ.) 10 o 4 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage 120 o Tj= 25 C 100 3 Collector - Emitter voltage : VCE [ V ] Tj= 125 C Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 8 80 60 40 6 4 Ic=100A 2 Ic= 50A 20 Ic= 25A 0 0 0 1 2 3 4 5 10 Collector - Emitter voltage : VCE [ V ] 20 25 [ Brake ] Dynamic Gate charge (typ.) [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 15 Gate - Emitter voltage : VGE [ V ] o Vcc=300V, Ic=50A, Tj= 25 C 20000 o C 500 25 400 20 300 15 200 10 100 5 Cies 1000 Coes Cres 100 0 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 50 100 150 200 Gate charge : Qg [ nC ] http://store.iiic.cc/ 250 0 300 Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] 10000 IGBT Modules 7MBR100SB060 M712 Outline Drawings, mm 1221 8-R2.250.3 1100.3 13.09 19.05 15.24 19 20 16 17 18 3.81 15.24 15 4=15.24 14 11.5 10 19.697 9 3.81 8 15.24 15.24 5 4 15.24 15.24 A A 22.86 o2.50.1 o0.4 0.80.2 1.150.2 15.24 6 10.2 1.10.3 Section A-A 2.90.3 6.50.5 20.51 171 3.50.5 o2.10.1 Shows theory dimensions http://store.iiic.cc/ 60.3 14.995 3 1.50.3 2 7 15.475 24 4.055 3.81 15.24 39.90.3 23 3.81 11.665 3.81 1 4.198 57.50.3 22 99.60.3 621 500.3 11.43 11.43 +0.5 0 11.5 21 94.50.3 19.05 +0.5 0 4-o5.50.3