FQB34N20L / FQI34N20L October 2008 QFET (R) FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control. * * * * * * * 31A, 200V, RDS(on) = 0.075 @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 52 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers * RoHS Compliant D D ! " G S D2-PAK Absolute Maximum Ratings ID " " I2-PAK G D S FQB Series Symbol VDSS ! " G! ! FQI Series S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQB34N20L / FQI34N20L 200 Units V 31 A - Continuous (TC = 100C) 20 A 124 A IDM Drain Current VGSS Gate-Source Voltage 20 V EAS Single Pulsed Avalanche Energy (Note 2) 640 mJ IAR Avalanche Current (Note 1) 31 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * (Note 1) 18 5.5 3.13 mJ V/ns W 180 1.43 -55 to +150 W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 0.7 Units C/W RJA Thermal Resistance, Junction-to-Ambient * -- 40 C/W RJA Thermal Resistance, Junction-to-Ambient -- 62.5 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2008 Fairchild Semiconductor International Rev. A1, Oct 2008 http://store.iiic.cc/ Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 200 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.16 VDS = 200 V, VGS = 0 V -- -- 1 A VDS = 160 V, TC = 125C -- -- 10 A Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA Gate Threshold Voltage VDS = VGS, ID = 250 A 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 15.5 A VGS = 5 V, ID = 15.5 A -- 0.057 0.060 0.075 0.080 gFS Forward Transconductance VDS = 30 V, ID = 15.5 A -- 41 -- S -- 3000 3900 pF -- 400 520 pF -- 52 67 pF IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 34 A, RG = 25 (Note 4, 5) VDS = 160 V, ID = 34 A, VGS = 5 V (Note 4, 5) -- 45 100 ns -- 520 1050 ns -- 170 350 ns -- 370 750 ns -- 55 72 nC -- 9.9 -- nC -- 27 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 31 A ISM -- -- 124 A -- -- 1.5 V VGS = 0 V, IS = 34 A, dIF / dt = 100 A/s -- 205 -- ns -- 1.1 -- C VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 31 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.0mH, IAS = 31A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 34A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2008 Fairchild Semiconductor International Rev. A1, Oct 2008 http://store.iiic.cc/ FQB34N20L / FQI34N20L Electrical Characteristics Top : ID , Drain Current [A] ID, Drain Current [A] 2 10 VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 2 10 1 10 1 10 150 0 10 25 -55 Notes : 1. 250s Pulse Test 2. TC = 25 Notes : 1. VDS = 30V 2. 250s Pulse Test -1 0 10 -1 10 0 10 1 10 0 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.25 2 10 IDR , Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 0.20 VGS = 5V 0.15 VGS = 10V 0.10 0.05 1 10 0 10 150 25 Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25 -1 0.00 0 30 60 90 10 120 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 7000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6300 10 5600 Ciss 4200 3500 2800 Coss Notes : 1. VGS = 0 V 2. f = 1 MHz 2100 1400 Crss 700 VGS, Gate-Source Voltage [V] VDS = 40V 4900 Capacitance [pF] FQB34N20L / FQI34N20L Typical Characteristics VDS = 100V 8 VDS = 160V 6 4 2 Note : ID = 34 A 0 -1 10 0 0 10 0 1 10 20 40 60 80 100 120 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2008 Fairchild Semiconductor International Figure 6. Gate Charge Characteristics Rev. A1, Oct 2008 http://store.iiic.cc/ (Continued) 2.5 1.2 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage FQB34N20L / FQI34N20L Typical Characteristics 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 0.5 Notes : 1. VGS = 10 V 2. ID = 17 A 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 35 Operation in This Area is Limited by R DS(on) 30 2 25 100 s ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 1 10 DC 0 10 Notes : 20 15 10 o 1. TC = 25 C 5 o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Z JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 100 125 150 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 N o te s : 1 . Z J C( t) = 0 .7 /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z J C( t) 0 .2 10 -1 0 .1 0 .0 5 PDM 0 .0 2 0 .0 1 10 -2 10 t1 s in g le p u ls e -5 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor International Rev. A1, Oct 2008 http://store.iiic.cc/ FQB34N20L / FQI34N20L Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 5V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 5V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V ID (t) VDS (t) VDD tp tp (c)2008 Fairchild Semiconductor International Time Rev. A1, Oct 2008 http://store.iiic.cc/ FQB34N20L / FQI34N20L Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2008 Fairchild Semiconductor International Rev. A1, Oct 2008 http://store.iiic.cc/ FQB34N20L / FQI34N20L Mechanical Dimensions D2 - PAK Dimensions in Millimeters (c)2008 Fairchild Semiconductor International Rev. A1, Oct 2008 http://store.iiic.cc/ FQB34N20L / FQI34N20L Mechanical Dimensions I2 - PAK Dimensions in Millimeters (c)2008 Fairchild Semiconductor International Rev. A1, Oct 2008 http://store.iiic.cc/ FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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