MITSUBISHI Nch POWER MOSFET FS10KMH-3 HIGH-SPEED SWITCHING USE FS10KMH-3 OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 f 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 E 0.75 0.15 w 2.6 0.2 1 2 3 2.5V DRIVE VDSS ............................................................................... 150V rDS (ON) (MAX) ........................................................... 160m ID ........................................................................................ 10A Integrated Fast Recovery Diode (TYP.) ............ 90ns Viso ............................................................................... 2000V 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA Avalanche drain current (Pulsed) IS ISM Source current Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg Viso Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value -- VGS = 0V VDS = 0V L = 100H Ratings Unit 150 10 V V 10 40 A A 10 A 10 40 A A 25 -55 ~ +150 W C -55 ~ +150 2000 C V 2.0 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KMH-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 4V ID = 5A, VGS = 2.5V ID = 5A, VGS = 4V ID = 5A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 80V, ID = 5A, VGS = 4V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = -100A/s Unit Min. Typ. Max. 150 -- -- -- -- 0.1 V A -- 0.6 -- 0.9 0.1 1.2 mA V -- 120 160 m -- -- 125 0.60 165 0.80 m V -- -- 24 2000 -- -- S pF -- -- 170 80 -- -- pF pF -- -- 33 74 -- -- ns ns -- 210 -- ns -- -- 135 1.0 -- 1.5 ns V -- -- -- 90 5.00 -- C/W ns PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 50 100 150 200 102 7 5 3 2 tw = 10ms 101 7 5 3 2 100ms 1ms 100 7 TC = 25C 10ms 5 Single Pulse DC 3 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 5V 3V 2.5V 10 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 VGS = 5V 3V 2.5V 5 2V 8 6 4 1.5V 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 2V 4 1.5V 3 2 1 TC = 25C Pulse Test 0 0 0.4 0.8 1.2 1.6 TC = 25C Pulse Test 2.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KMH-3 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 ID = 15A 1.6 1.2 10A 0.8 5A 0.4 0 0 1.0 2.0 3.0 TC = 25C Pulse Test 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 40 TRANSFER CHARACTERISTICS (TYPICAL) 8 4 102 7 5 4 3 2 TC = 25C 75C 125C 101 7 5 4 3 VDS = 10V Pulse Test 2 0 1.0 2.0 3.0 4.0 100 0 10 5.0 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 Ciss 103 7 5 3 2 101 80 0 5.0 12 102 7 5 3 2 4V 120 DRAIN CURRENT ID (A) 16 0 VGS = 2.5V 160 GATE-SOURCE VOLTAGE VGS (V) 20 CAPACITANCE Ciss, Coss, Crss (pF) 4.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) TC = 25C Pulse Test Coss Tch = 25C f = 1MHZ VGS = 0V Crss 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 103 7 5 4 3 2 102 7 5 4 3 TCh = 25C VDD = 80V VGS = 10V RGEN = RGS = 50 td(off) tf tr td(on) 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KMH-3 HIGH-SPEED SWITCHING USE 5.0 SOURCE CURRENT IS (A) VDS = 50V 3.0 80V 100V 2.0 1.0 0 10 20 30 40 12 TC = 125C 8 75C 25C 4 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 2 100 7 5 4 3 2 -50 0 50 100 VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 0 GATE CHARGE Qg (nC) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 10-1 VGS = 0V Pulse Test 16 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) 20 Tch = 25C ID = 10A 4.0 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 3 0.5 2 0.2 100 0.1 7 5 3 2 10-1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999