B2 - 95
© 2000 IXYS All rights reserved
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD
(IXGH)
98510C (7/00)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250mA, VGE = 0 V 6 0 0 V
VGE(th) IC= 250 mA, VCE = VGE 2.5 5.0 V
ICES VCE = 0.8 • VCES TJ = 25°C 200 mA
VGE = 0 V TJ = 150°C3mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 1 .8 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C60A
IC90 TC= 90°C30A
ICM TC= 25°C, 1 ms 1 2 0 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 10 W ICM = 60 A
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES
PCTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum Lead and Tab temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque, TO-247 AD 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
HiPerFASTTM IGBT
with Diode
TO-268
(IXGT)
G
E
C (TAB)
Features
•International standard package
•Moderate frequency IGBT and
antiparallel FRED in one package
•High current handling capability
•Newest generation HDMOSTM
process
•MOS Gate turn-on
- drive simplicity
Applications
•AC motor speed control
•DC servo and robot drives
•DC choppers
•Uninterruptible power supplies (UPS)
•Switch-mode and resonant-mode
power supplies
Advantages
•Space savings (two devices in one
package)
•High power density
•Optimized Vce(sat) and switching
speeds for medium frequency
application
VCES = 600 V
IC25 = 60 A
VCE(sat) = 1.8 V
tfi(typ) = 100 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 30N60BD1
IXGT 30N60BD1
B2 - 96 © 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 25 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies 2700 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 2 40 pF
Cres 50 pF
Qg110 nC
Qge IC= IC90, VGE = 15 V, VCE = 0.5 VCES 22 nC
Qgc 40 nC
td(on) 25 ns
tri 30 ns
td(off) 130 220 ns
tfi 100 190 ns
Eoff 1.0 2.0 mJ
td(on) 25 ns
tri 35 ns
Eon 1.0 mJ
td(off) 200 ns
tfi 230 ns
Eoff 2.5 mJ
RthJC 0.62 K/W
RthCK (TO-247 AD) 0.25 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF= IC90, VGE = 0 V, Pulse test TJ = 150°C 1.6 V
t£ 300 ms, duty cycle d £ 2 % 2.5 V
IRM IF= IC90, V GE = 0 V, -diF/dt = 100 A/ms6A
trr VR= 100 V TJ =100°C 100 ns
IF= 1 A; -di/dt = 100 A/ms; VR = 30 V 2 5 ns
RthJC 0.9 K/W
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 150°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
IXGH 30N60BD1
IXGT 30N60BD1
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
B2 - 97
© 2000 IXYS All rights reserved
Fig. 1. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics
Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of VCE(sat)
Fig. 5. Admittance Curves Fig. 6.Temperature Dependence of
BVDSS & VGE(th)
IXGH 30N60BD1
IXGT 30N60BD1
VCE - Volts
012345
I
C
- Amp e res
0
20
40
60
80
100
VCE-Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
10
100
1000
10000
TJ - Degrees C
25 50 75 100 125 150
V
CE (sat)
- Normalized
0.6
0.8
1.0
1.2
1.4
1.6
VCE - Volts
012345
I
C
- Amperes
0
20
40
60
80
100
VGE - Volts
345678910
I
C
- Amp e res
0
20
40
60
80
100
VCE - Volts
0246810
I
C
- Amp e res
0
40
80
120
160
200
13V 11V
9V
7V
VCE = 10V
TJ = 25°CVGE = 15V
TJ = 25°C
IC = 15A
IC = 30A
IC = 60A
TJ = 150°C
Crss
f = 1Mhz
5V 5V
VGE = 15V
TJ = 25°C
TJ = 150°C
Ciss
Coss
VGE = 15V
13V
11V
9V
7V
VGE = 15V
13V
11V
9V
5V
7V
B2 - 98 © 2000 IXYS All rights reserved
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
(K/W)
0.001
0.01
0.1
1
D=0.2
VCE - Volts
0 100 200 300 400 500 600
I
C
- A m p eres
0.1
1
10
100
Qg - nanocoulombs
0 25 50 75 100 125 150 175
V
GE
-
Volts
0
3
6
9
12
15
18
RG - Oh ms
0 102030405060
E
(ON)
- millijoules
0
2
4
6
8
10
IC - Amperes
0 20406080
E
(OFF)
- milliJoules
0
2
4
6
8
E
(ON)
- millijoules
0
1
2
3
4
VCE = 360V
IC = 15A
IC = 30A
E(ON)
E(OFF)
TJ = 150°C
RG = 4.7
W
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
RG = 4.7
W
TJ = 150 °C
60
IC = 60A
TJ = 150°C
IC = 30A
Fig. 7. Dependence of EOFF and EOFF on IC. Fig. 8. Dependence of EOFF on RG.
Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area
Fig. 11. IGBT Transient Thermal
Resistance
IXGH 30N60BD1
IXGT 30N60BD1
B2 - 99
© 2000 IXYS All rights reserved
IXGH 30N60BD1
IXGT 30N60BD1
200 600 10000 400 800
60
70
80
90
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C-diF/dt
ts
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
VFR
diF/dt
V
200 600 10000 400 800
0
5
10
15
20
25
30
100 1000
0
200
400
600
800
1000
0123
0
10
20
30
40
50
60
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/
m
s
A
V
nC
A/
m
sA/
m
s
trr
ns tfr
ZthJC
A/
m
s
µs
DSEP 29-06
IF= 60A
IF= 30A
IF= 15A
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 30A
Fig. 14Peak reverse current IRM
versus -diF/dt
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
Fig. 12 Forward current IF versus VF
IF= 60A
IF= 30A
IF= 15A
Qr
IRM
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt Fig. 17 Peak forward voltage VFR and tfr
versus diF/dt
IF= 60A
IF= 30A
IF= 15A
tfr
VFR
Fig. 18 Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) t i (s)
1 0.502 0.0052
2 0.193 0.0003
3 0.205 0.0162
TVJ=25°C
TVJ=100°C
TVJ=150°C
