ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
SM = 6500
V
ITAVM = 1580
A
ITRMS = 2480
A
ITSM = 29700
A
V
T0 =1.2
V
r
T= 0.458 mΩ
ΩΩ
Ω
Bi-Directional Control Thyristor
5STB 18U6500
Doc. No. 5SYA1037-02 Apr. 02
•
••
•Two thyristors integrated into one wafer
•
••
•Patented free-floating silicon technology
•
••
•Designed for traction, energy and industrial applications
•
••
•Optimum power handling capability
•
••
•Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking Maximum rated values
Symbol Conditions 5STB 18U6500 5STB 18U6200 5STB 18U5800
VSM f = 5 Hz, tp = 10ms 6500 V 6200 V 5800 V
VRM f = 50 Hz, tp = 10ms 5600 V 5300 V 4900 V
IRM VRM, Tj = 110°C ≤ 600 mA
dV/dtcrit Exp. to 0.67 x VDRM, Tj = 110°C 2000 V/µs
Mechanical data
Parameter Symbol Conditions min typ. max Unit
Mounting force FM120 135 160 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Weight m 3.6 kg
Surface creepage distance DS53 mm
Air strike distance Da22 mm
5STB 18U6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-02 Apr. 02 page 2 of 5
On-state
Parameter Symbol Conditions min typ. max Unit
Max. average on-state
current
ITAVM Half sine wave, Tc = 70°C 1580 A
Max. RMS on-state current ITRMS 2480 A
Max. peak non-repetitive
surge current
ITSM 29700 A
Limiting load integral I2t
tp = 10 ms, Tj = 110°C,
V = VR=0 V
4400 kA2s
Max. peak non-repetitive
surge current
ITSM 31800 A
Limiting load integral I2t
tp = 8.3 ms, Tj = 110°C,
V = VR=0 V
4190 kA2s
On-state voltage VTIT = 1600 A, Tj= 110°C 1.93 V
Threshold voltage VT0 IT = 1000 A - 3000 A, Tj= 110°C 1.2 V
Slope resistance rTTj = 110°C 0.458 mΩ
Holding current IHTj = 25°C 125 mA
Tj = 110°C 75 mA
Switching
Parameter Symbol Conditions min typ. max Unit
Critical rate of rise of on-
state current
di/dtcrit Cont.
f = 50 Hz
250 A/µs
Critical rate of rise of on-
state current
di/dtcrit
T
j
= 110°C, ITRM = 2000 A,
VD ≤ 0.67⋅VRM,
IFG = 2 A, tr = 0.5 µs Cont.
f = 1Hz
1000 A/µs
Delay time tdVD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs 3µs
Turn-off time tqTj = 110°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs,
VD ≤ 0.67⋅VRM, dvD/dt = 20V/µs,
800 µs
Recovery charge Qrr Tj = 110°C, ITRM = 2000 A,
VR = 200 V,
diT/dt = -1.5 A/µs
2100 3200 µAs
Triggering
Parameter Symbol Conditions min typ. max Unit
Gate trigger voltage VGT Tj = 25°C 2.6 V
Gate trigger current IGT Tj = 25°C 400 mA
Gate non-trigger voltage VGD VD = 0.4 x VRM, Tvjmax = 110°C 0.3 V
Gate non-trigger current IGD VD = 0.4 x VRM 10 mA
Peak forward gate voltage VFGM 12 V
Max. rated peak forward
gate current
IFGM 10 A
Peak reverse gate voltage VRGM 10 V
Max. rated gate power loss PGFor DC gate current 3 W
Max. rated peak forward
gate power
PGM see Fig. 9
5STB 18U6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-02 Apr. 02 page 3 of 5
Thermal
Parameter Symbol Conditions min typ. max Unit
Operating junction
temperature range
Tj110 °C
Storage temperature range Tstg -40 140 °C
Thermal resistance junction
to case
RthJC Double side cooled 8 K/kW
Anode side cooled 16 K/kW
Cathode side cooled 16 K/kW
Thermal resistance case to
heatsink
RthCH Double side cooled 1.6 K/kW
Single side cooled 3.2 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC i
å
=
τ
i1 234
Ri(K/kW) 5.11 1.63 0.85 0.45
τi(s) 0.9531 0.1541 0.0211 0.0068
Fig. 1 Transient thermal impedance junction to case
Fig. 2 Isothermal on-state characteristics Fig. 3 Isothermal on-state characteristics
5STB 18U6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-02 Apr. 02 page 4 of 5
Fig. 4 On-state power dissipation vs. mean on-
state current. Switching losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave.
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
5STB 18U6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1037-02 Apr. 02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
IGM
IGon
100 %
90 %
10 %
IGM ≈ 2..5 A
IGon ≥ 1.5 IGT
diG/dt ≥ 2 A/µs
tr≤ 1 µs
tp(IGM)≈ 5...20µs
diG/dt
tr
tp (IGM)
IG (t)
t
tp (IGon)
Fig. 8 Recommendet gate current waveform. Fig. 9 Max. rated peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
