FEATURES
3 V SILICON RFIC FREQUENCY UPCONVERTER
BIPOLAR ANALOG INTEGRATED CIRCUIT
• RECOMMENDEDOPERATINGFREQUENCY:
fRFout = 0.4 GHz to 2.0 GHz
fIFin = 100 MHz to 400 MHz
• SUPPLYVOLTAGE:
VCC = 2.7 to 5.5 V
• HIGHDENSITYSURFACEMOUNTING:
6 pin super mini mold package
• LOWCARRIERLEAKAGE:
Due to double balanced mixer
• BUILT-INPOWERSAVEFUNCTION
INTERNALBLOCKDIAGRAM
DESCRIPTION
The UPC8106TB is a silicon RFIC designed as a frequency
upconverter for cellular/cordless telephone transmitter stages
and features improved intermodulation. This device is housed
in a 6 pin super mini mold or SOT-363 package making it ideal
for reducing system size. The UPC8106TB is manufactured
using the 20 GHz fT NESATTM III silicon bipolar process.
Stringent quality assurance and test procedures ensure the
highest reliability and performance.
ELECTRICALCHARACTERISTICS
(TA = 25°C, VCC = VRFout = 3 V, fIFin = 240 MHz, PLOin = -5 dBm, VPS ≥ 2.7 V unless otherwise specied)
UPC8106TB
PARTNUMBER UPC8106TB
PACKAGEOUTLINE S06
SYMBOLS PARAMETERSANDCONDITIONS UNITS MIN TYP MAX
ICC Circuit Current at VPS ≥ 2.7 V mA 4.5 9 13.5
VPS = 0 V μA 10
CG Conversion Gain at fRFout = 0.9 GHz, PIFin = -30 dBm dB 6 9 12
fRFout = 1.9 GHz, PIFin = -30 dBm dB 4 7 10
PSAT Saturated Output Power at fRFout = 0.9 GHz, PIFin = 0 dBm dBm -4 -2
fRFout = 1.9 GHz, PIFin = 0 dBm dBm -6.5 -4
OIP3 Output Third-Order Intercept Point at
fIFin1 = 240.0 MHz
fIFin2 = 240.4 MHz fRFout = 0.9 GHz dBm +5.5
PIFin = -20 dBm fRFout = 1.9 GHz dBm +2.0
IM3 Third-Order Intermodulation Level at
fIFin1 = 240 MHz
fIFin2 = 240.4 MHz fRFout = 0.9 GHz dBc -31
PIFin = -20 dBm fRFout = 1.9 GHz dBc -30
NF SSB Noise Figure, fRFout = 0.9 GHz dB 8.5
TPS(RISE) Power Save Rise Time at VPS: GND→VCC μS 2.0
TPS(FALL) Power Save Fall Time at VPS: VCC →GND μS 2.0
(Top View)
• CELLULAR/CORDLESSTELEPHONE
APPLICATION