1
Item Symbol Rating Unit
Drain-source voltage VDS -60
Continuous drain current ID±7
Pulsed drain current ID(puls] ±28
Gate-source voltage VGS ±20
Maximum avalanche energy *1 EAV 141.8
Maximum power dissipation(Tc=25°C) PD20
Operating and storage Tch +150
temperature range Tstg
2SJ473-01L,S FUJI POWER MOSFET
P-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
V
A
A
V
mJ
W
°C
°C-55 to +150
FAP-III SERIES
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item Symbol
Zero gate voltage drain current IDSS
Min. Typ. Max. Units
V
V
μA
mA
nA
mΩ
mΩ
S
pF
ns
A
V
ns
μC
Min. Typ. Max. Units
Thermal resistance Rth(ch-c)
Rth(ch-a)
6.25
125.0
°C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS= -60V Tch=25°C
VGS=0V Tch=125°C
VGS=±20V VDS=0V
ID= -3.5A VGS= -4V
VGS= -10V
ID=3.5A VDS= -25V
VDS= -25V
VGS=0V
f=1MHz
VCC= -30V RG=10 Ω
ID= -7A
VGS= -10V
L=100μH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/μs Tch=25°C
-60
-1.0 -1.5 -2.5
-10 -500
-0.2 -1.0
10 100
260 350
150 200
2.5 5.0
550 830
200 300
110 170
10 15
20 30
60 90
25 50
-7
-2.50 -3.8
110
0.50
Gate(G)
Source(S)
Drain(D)
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
K-Pack(L) K-Pack(S)
L-type S-type
EIAJ
*1 L=3.86mH, Vcc= -24V
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