2SA1695 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) -10max A V IEBO VEB=-6V -10max A -140min IC=-50mA V 50min VCE=-4V, IC=-3A A VCE(sat) IC=-5A, IB=-0.5A -0.5max V 100(Tc=25C) W fT VCE=-12V, IE=0.5A 20typ MHz Tj 150 C COB VCB=-10V, f=1MHz 400typ pF -55 to +150 C hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min -4 PC Tstg a o3.20.1 b IB 2 3 1.05 +0.2 -0.1 Typical Switching Characteristics (Common Emitter) 5.450.1 5.450.1 B VCC (V) RL () IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (s) tstg (s) tf (s) -60 12 -5 -10 5 -0.5 0.5 0.17typ 1.86typ 0.27typ I C - V BE Temperature Characteristics (Typical) -3 -10 A Collector Current I C (A) -8 -100 mA -7 5m A -6 -50mA -4 -25mA -2 I B =-10mA 0 -1 0 -2 -3 -4 -2 -1 -2 I C =-10A 0 0 -0.5 -1.0 -1.5 0 -1 (V C E =-4V) 200 Typ 50 -1 -5 Transient Thermal Resistance DC Curr ent Gain h F E 125C 100 25C 100 -30C 50 30 -0.02 -10 -0.1 -0.5 -1 -5 -10 j-a - t Characteristics 3 1 0.5 0.1 1 10 f T - I E Characteristics (Typical) 100 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) -1.5 Base-Emittor Voltage V B E (V) h FE - I C Temperature Characteristics (Typical) 200 Safe Operating Area (Single Pulse) P c - T a Derating (V C E =-12V) 100 -0.1 -3 -5 -10 -50 -100 Collector-Emitter Voltage V C E (V) -200 nk Emitter Current I E (A) 10 si 1 50 at 0.1 he 0 0.02 ite ms Without Heatsink Natural Cooling fin 10 -0.5 In s -1 ith 3m s 10 DC -5 0m Typ 10 20 Co lle ctor Cu rren t I C ( A) -10 W Maximu m Power Diss ip ation P C (W) -30 30 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 0 -2.0 (V C E =-4V) -0.5 -4 Base Current I B (A) h FE - I C Characteristics (Typical) -0.1 -6 -5A Collector-Emitter Voltage V C E (V) 30 -0.02 -8 p) 0m Tem -15 se 0 (Ca -2 C 0 (V C E =-4V) 125 -3 j- a ( C/W) 00 A 0m Collector-Emitter Saturation Voltage V C E (s at) (V ) -4 A 0m 1.4 E V CE ( sat ) - I B Characteristics (Typical) -10 mA C Weight : Approx 6.0g a. Type No. b. Lot No. Collector Current I C (A) I C - V CE Characteristics (Typical) 0.65 +0.2 -0.1 ) hFE Temp V(BR)CEO A 2.00.1 (Case V -10 4.80.2 -30C -6 IC mp) VEBO e Te -140 (Cas VCEO 15.60.4 9.6 25C V 1.8 VCB=-140V -140 5.00.2 ICBO VCBO 2.0 Unit Symbol External Dimensions MT-100(TO3P) (Ta=25C) 2SA1695 Unit 4.0 Electrical Characteristics Conditions 2SA1695 19.90.3 Symbol 4.0max Absolute maximum ratings (Ta=25C) Application : Audio and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 29