PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Data Sheet 1 of 11 Rev. 04, 2009-10-05
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212401E
Package H-36260-2
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
PTFA212401F
Package H-37260-2
Features
•Thermally-enhanced packages, Pb-free and
RoHS compliant
•Broadband internal matching
•Typical two-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8 dB
- Average output power = 47.0 dBm
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35 dBc
- Adjacent channel power = –40 dBc
•Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output power = 49 dBm
- Linear Gain = 15.8 dB
- Efficiency = 34%
- Adjacent channel power = –33 dBc
•Typical CW performance, 2140 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 54%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 5:1 VSWR @ 30 V,
240 W (CW) output power
*See Infineon distributor for future availability.
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
clipping, PAR = 8.5 dB, 3.84 MHz BW
-60
-55
-50
-45
-40
-35
-30
36 38 40 42 44 46 48
Average Output Power (dBm)
5
10
15
20
25
30
35
Drain Efficiency (%)
Adjacent Channel Power Ratio (dB)
Efficiency
ACPR Up
ACPR Low
Data Sheet 2 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
RF Characteristics
Two-Carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 14.8 15.8 —dB
Drain Efficiency ηD26 28 —%
Intermodulation Distortion IMD —–35.0 –33 dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 220 W PEP, ƒ1 = 2140 MHz, ƒ2 = 2141 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —15.8 —dB
Drain Efficiency ηD—38.5 —%
Intermodulation Distortion IMD —–28 —dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 30 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.03 —Ω
Operating Gate Voltage VDS = 30 V, IDQ = 1.6 A VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD761 W
Above 25°C derate by 4.35 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 50 W Average WCDMA) RθJC 0.23 °C/W
Data Sheet 3 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Two-carrier WCDMA at Selected Biases
VDD
= 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
series show IDQ
-55
-50
-45
-40
-35
-30
34 36 38 40 42 44 46
Output Power, PEP (dBm)
3rd Order IMD (dBc)
1.6 A
2.0 A
1.8 A
2.2 A
1.4 A
*See Infineon distributor for future availability.
Ordering Information
Type and Version Package Outline Package Description Shipping
PTFA212401E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended Tray
PTFA212401F V4 H-37260-2 Thermally-enhanced earless flange, single-ended Tray
Broadband Performance
VDD = 30 V, IDQ = 1600 mA, POUT = 50 W
10
15
20
25
30
35
40
2050 2080 2110 2140 2170 2200
Frequency (MHz)
Gain (dB), Efficiency (%)
-35
-30
-25
-20
-15
-10
-5
Input Return Loss (dB)
Gain
Efficiency
Return Loss
Typical Performance (data taken in a production test fixture)
Data Sheet 4 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz
12
13
14
15
16
17
0 40 80 120 160 200 240
Output Power (W)
Gain (dB)
15
25
35
45
55
65
Drain Efficiency (%)
Gain
Efficiency
TCASE = 25°C
TCASE = 90°C
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 30 V IDQ = 1600 mA , ƒ = 2140 MHz,
POUT = 53 dBm PEP
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30 35 40
Tone Spacing (MHz)
3rd Order
7th
5th
Intermodulation Distortion (dBc)
Intermodulation Distortion Products
vs. Output Power
VDD = 30 V, IDQ = 1600 mA,
ƒ1 = 2137.5 MHz, ƒ2 = 2142.5 MHz
-60
-50
-40
-30
-20
10 100 1000
Output Power, PEP (W)
IM5
IM7
Intermodulation Distortion (dBc)
Up
Low
IM3
Voltage Sweep
IDQ = 1600 mA, ƒ = 2140 MHz,
tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-50
-40
-30
-20
-10
24 26 28 30 32
Supply Voltage (V)
10
20
30
40
50
Gain
Efficiency
IM3 Up
Gain (dB), Drain Efficiency (%)
3rd Order IMD (dBc)
Data Sheet 5 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Gain vs. Power Sweep (CW) over
Temperature
VDD = 30 V, IDQ = 1500 mA, ƒ = 2140 MHz
12
13
14
15
16
17
18
1 10 100 1000
Output Power (W)
Power Gain (dB)
-15C
25C
85C
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing
-55
-50
-45
-40
-35
-30
-25
34 36 38 40 42 44 46 48
Output Power, avg. (dBm)
5
10
15
20
25
30
35
Drain Efficiency (%)
ACPR
Efficiency
IM3
IM3 (dBc), ACPR (dBc)
Two-tone Drive-up
VDD = 30 V, IDQ = 1600 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
44 46 48 50 52 54
Output Power, PEP (dBm)
10
15
20
25
30
35
40
45
50
Drain Efficiency (%)
IM5
Efficiency
IM7
Intermodulation Distortion (dBc)
IM3
Output Peak-to-Average Ratio Compression
(PARC) at various Power Levels
VDD = 30 V, IDQ = 1600 mA, ƒ = 2170 MHz,
single-carrier WCDMA input PAR = 7.5 dB
0.001
0.01
0.1
1
10
100
1 2 3 4 5 6 7 8
Peak-to-Average (dB)
Probability (%)
52 dBm
51 dBm
50 dBm
48 dBm
46 dBm
Input
Data Sheet 6 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
0.1
0.2
0.1
0.2
0.1
0
.2
A
R
D
G
E
N
E
R
AT
O
R
--->
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
2080 MHz
2200 MHz
Z Load
Z Source
2200 MHz
2080 MHz
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
2080 10.050 –4.250 1.140 2.07
2110 9.750 –4.320 1.080 2.38
2140 9.500 –4.380 1.090 2.65
2170 9.280 –4.350 1.130 2.89
2200 9.000 –4.460 1.450 3.11
Broadband Circuit Impedance
Z0 = 50 Ω
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
Typical Performance (cont.)
Data Sheet 7 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT PTFA212401E or PTFA212401F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 3.5 RF–35 1 oz. copper
Microstrip Electrical Characteristics at 2140 MHz Dimensions: L x W ( mm) Dimensions: L x W (in.)
l10.018 λ, 49.9 Ω1.55 x 1.70 0.061 x 0.067
l20.022 λ, 49.9 Ω1.91 x 1.70 0.075 x 0.067
l30.047 λ, 49.9 Ω3.99 x 1.70 0.157 x 0.067
l40.034 λ, 49.9 Ω2.90 x 1.70 0.114 x 0.067
l50.024 λ, 42.8 Ω2.01 x 2.16 0.079 x 0.085
l6 (taper) 0.063 λ, 42.8 Ω / 6.9 Ω5.28 x 2.16 / 20.32 0.208 x 0.085 / 0.800
l7, 0.043 λ, 6.9 Ω3.33 x 20.32 0.131 x 0.800
l8, l90.134 λ, 59.9 Ω11.48 x 1.04 0.452 x 0.041
l10 0.029 λ, 6.9 Ω2.21 x 20.32 0.087 x 0.800
l11, l12 0.262 λ, 51.0 Ω22.10 x 1.65 0.870 x 0.065
l13 0.042 λ, 5.0 Ω3.18 x 28.91 0.125 x 1.138
l14 0.032 λ, 5.0 Ω2.41 x 28.91 0.095 x 1.138
l15 (taper) 0.014 λ, 5.0 Ω / 6.65 Ω1.04 x 28.91 / 21.89 0.041 x 1.138 / 0.862
l16 (taper) 0.026 λ, 6.65 Ω / 11.68 Ω2.03 x 21.89 / 11.43 0.080 x 0.862 / 0.450
l17 (taper) 0.025 λ, 11.68 Ω / 40.7 Ω2.13 x 11.43 / 2.34 0.084 x 0.450 / 0.092
l18 0.017 λ, 40.7 Ω1.40 x 2.34 0.055 x 0.092
l19 0.123 λ, 49.9 Ω10.24 x 1.70 0.403 x 0.067
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
0.001µF
VDD
R1
1.2K V
R3
2K V
R5
2K V
R8
2K V
C27
0.3pF
l14
C28
0.3pF
C8
8.2pF
l3
C9
1.3pF
R7
5.1K V
C11
0.1µF
C10
4.7µF
16V
C12
8.2pF
l9l12
C20
8.2pF
C21
1µF
R6
5.1K V
C5
0.1µF
l4l5
C4
4.7µF
16V
l6l7
l8
C6
8.2pF
l11
DUT
l10 l13
C13
8.2pF
C32
0.7pF
C22
1µF
C24
0.1µF
C26
100µF
50V
C25
10µF
50V
l18l15
C14
1µF
C31
0.7pF
C17
0.1µF
C19
100µF
50V
C33
8.2pF
l19
C18
10µF
50V
VDD
C7
0.7pF
J1 l2l1
C29
0.5pF
L2
C30
0.5pF
C23
2.2µF
l16 l17
C16
2.2µF
C15
1µF
L1
Data Sheet 8 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Reference circuit assembly diagram* (not to scale)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4, C10 Capacitor, 4.7 µF, 16 VDigi-Key PCS3475CT-ND
C5, C11, C17, C24 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C12 Ceramic capacitor, 8.2 pF ATC 100A 8R2
C7, C31, C32 Capacitor, 0.7 pF AVX 08051J0R7BBTTR
C8, C33 Ceramic capacitor, 8.2 pF ATC 100B 8R2
C9 Capacitor, 1.3 pF ATC 600S1R3BT
C13, C20 Capacitor, 8.2 pF AVX 100A 8R2
C14, C15, C21, C22 Ceramic capacitor, 1 µF Digi-Key 445-1411-1-ND
C16, C23 Capacitor, 2.2 µF Digi-Key 445-1447-2-ND
C18, C25 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C19, C26 Electrolytic capacitor, 100 µF, 50 VDigi-Key P5571-ND
C27, C28 Capacitor, 0.3 pF AVX 08051J0R3BBTTR
C29, C30 Capacitor, 0.5 pF AVX 08051J0R5BBTTR
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3, R5 Chip resistor 2 k-ohms Digi-Key P2KECT-ND
R4 Chip resistor 10 ohms Digi-Key P10ECT-ND
R6, R7 Chip resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
R8 Variable resistor 2 k-ohms Digi-Key 3224W-202ETR-ND
C1
R7 C25
C28
C22
C21
C9
C7
C11
C8
C10
C12
C4
C5
R5
R8
R3
C6
R6
R1
C3
QQ1 Q1
C31
C30 C23
C33
C32
C29
C27
R2
C18
C19
C13
C2
J2
C14
C15
C20
C26
C24
C17
C16
L2
J1
L1
Data Sheet 9 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Primary dimensions are mm. Alternate dimensions are inches.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
23.37±0.51
[.920±.020]
13.72
[.540]
2X 12.70
[.500]
34.04
[1.340]
LID 22.35±0.23
[.880±.009]
4.11±0.38
[.162±.015]
1.02
[.040]
C
L
L
C
D
G
S
L
C
0.0381 [.0015] -A-
45° X 2.031
45° X [.080]
4.83±0.50
[.190±.020]
LID 13.21
+0.10
-0.15
[.520
+.004
-.006 ]
4X R1.52
[R.060]
2X R1.63
[R.064]
C66065-A2324-C001-01-0027
SPH 1.57
[.062]
27.94
[1.100]
Data Sheet 10 of 11 Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37260-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Primary dimensions are mm. Alternate dimensions are inches.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
C
L
L
C
D
G
L
C
0.0381 [.0015] -A-
23.37±0.51
[.920±.020]
4.83±0.50
[.190±.020]
2X 12.70
[.500]
LID 22.35±0.23
[.880±.009]
4.11±0.38
[.162±.015]
23.11
[.910]
45° X 2.03
[45° X .080]
S
C66065-A2325-C001-01-0027
13.72
[.540]
LID 13.21+0.10
-0.15
[.520+.004
-.006 ]
R0.508+0.381
-0.127
[R.020
+.015
-.005 ]
1.02
[.040]
SPH 1.57
[.062]
Data Sheet 11 of 11 Rev. 04, 2009-10-05
PTFA212401E/F V4
Confidential, Limited Internal Distribution
Revision History: 2009-10-05 Data Sheet
Previous Version: 2009-04-01 Data Sheet
Page Subjects (major changes since last revision)
2Updated characteristics
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-10-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
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that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
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