SPECIFICATION
Device Name :
Type Name :
Spec. No. :
H04-004-07b
IGBT MODULE
2MBI150U4A-120
MS5F 6031
MS5F6031
1
13
Feb. 09 ’05
T.Miyasaka
Y. S ek i
K.Yamada
S.Miyashita
Feb. 09 ’05
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2
H04-004-06b
R e v i s e d R e c o r d s
Date Classi-
fication Ind. Content Applied
date Drawn Checked Checked Approved
Enactment Issued
date
MS5F6031
13
Feb.-09 -’05 K.Yamada
T.Miyasaka Y. S e k i
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H04-004-03a
MS5F6031
13
2MBI150U4A-120
2. Equivalent circuit
1. Outline Drawing ( Unit : mm )
3
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4
Storage temperature
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Turn-off time
-
us
R lead
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip (*3) 1.39 -
1.90 2.05
Junction temperature
o
C
Isolation
voltage
(*3) Biggest internal terminal resistance among arm.
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
mΩ
trr
3.5
between terminal and copper base (*1)
N m
(*1) All terminals should be connected together when isolation test will be done.
Mounting (*2)
Terminals (*2)
- 0.35
-
IF=150A -
Tj=125
o
C
-
V
- 2.00 -
- 1.65 1.80
1.75
-
(chip)
Tj=25
o
C
0.41
(terminal)
IF=150A
Tj=25
o
C
VGE=0V
Tj=125
o
C
1.00
tf - 0.07 0.30
toff RG=2.2Ω-
0.60
tr(i) VGE=±15V - 0.03 -
tr Ic=150A - 0.10
17 - nF
ton Vcc=600V - 0.32 1.20
us
Cies
VGE(th) VCE=20V 4.5
VCE=10V,VGE=0V,f=1MHz -
Ic=150A
Tj=25
o
C
VGE=15V
-
-
V
Ic=150mA 6.5 8.5
ICES - - 1.0
VGE=0V
VCE=1200V
Symbols typ. max.
Characteristics
min.
Icp
Items
Collector current
Ic
Tj
4. Electrical characteristics ( at Tj= 25
o
C unless otherwise specified )
Viso AC : 1min. 2500 VAC
-Ic
-Ic pulse
2.30
Conditions
VCE=0V -
-40 to +125
- 200
VGE=±20V
V
A
300
W
200
±20
Tc=25
o
C
Continuous
Collector-Emitter voltage
mA
nA
Units
150
300
+150
150
735
Tstg
IGES
Collector Power Dissipation 1 device
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Pc
Tj=125
o
C
VCE(sat)
(chip)
Tj=25
o
C
V
-
- 2.15
-
1.90 2.05
2.35
2.10 -
VCES
1ms
1200
400
Tc=80
o
C
Tc=25
o
C
1ms
Tc=80
o
C
3. Absolute Maximum Ratings ( at Tc= 25
o
C unless otherwise specified )
Maximum
Ratings
VGES
Units
V
Symbols Conditions
Gate-Emitter voltage
Items
Screw
Torque -
Tj=125
o
C
VCE(sat)
(terminal)
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5
L
Vcc
Ic
V
CE
R
G
V
GE
V
GE
V
CE
Ic
0V
0A
0V
10%
90%
10% 10%
90%
90%
0V
Ic
V
CE
～
～
～
～
～
～
o n
t
r
t
r( i )
t
o f f
t
f
t
r r
I
r r
t
Logo of production
Lot.No.
Place of manufacturing (code)
•
•
•
•
•
•
9. Definitions of switching time
Store modules with unprocessed terminals.
- Products quantity in a packing box
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
Do not drop or otherwise shock the modules when transporting.
7. Applicable category
This specification is applied to IGBT-Module named 2MBI150U4A-120.
module surface.
8. Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35
o
C and humidity of 45 to 75% .
Store modules in a place with few temperature changes in order to avoid condensation on the
Avoid exposure to corrosive gases and dust.
Avoid excessive external force on the module.
Rth(j-c)
0.05
Thermal resistance(1device) IGBT -
-
-
5. Thermal resistance characteristics
Items Symbols Conditions Units
min.
typ.
max.
Characteristics
0.17
FWD - -
2MBI150U4A-120
150A 1200V
Contact Thermal resistance
(1 device) (*4) Rth(c-f) with Thermal Compound
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
-
o
C/W
0.28
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11. Reliabili ty test results
6
Reliability Test Items
Test
cate-
gories
Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of
sample
Accept-
ance
number
1 Terminal Strength Pull force : 40N
Test Method 401
5 ( 0 : 1 )
(Pull test) Test time : 10±1 sec.
MethodⅠ
2 Mounting Strength Screw torque : 2.5 ~ 3.5 N･m (M5)
Test Method 402
5 ( 0 : 1 )
Test time : 10±1 sec.
methodⅡ
3 Vibration Range of frequency : 10 ~ 500Hz
Test Method 403
5 ( 0 : 1 )
Sweeping time : 15 min.
Reference 1
Acceleration :
100m/s
2
Condition code B
Sweeping direction : Each X,Y,Z axis
Test time : 6 hr. (2hr./direction)
4 Shock Maximum acceleration :
5000m/s
2
Test Method 404
5 ( 0 : 1 )
Pulse width : 1.0msec.
Condition code B
Direction : Each X,Y,Z axis
Test time : 3 times/direction
1 High Temperature Storage temp. : 125±5 ℃
Test Method 201
5 ( 0 : 1 )
Storage Test duration : 1000hr.
2 Low Temperature Storage temp. : -40±5 ℃
Test Method 202
5 ( 0 : 1 )
Storage Test duration : 1000hr.
3 Temperature Storage temp. : 85±2 ℃
Test Method 103
5 ( 0 : 1 )
Humidity Relative humidity : 85±5%
Test code C
Storage Test duration : 1000hr.
4 Unsaturated Test temp. : 120±2 ℃
Test Method 103
5 ( 0 : 1 )
Pressurized Vapor Test humidity : 85±5%
Test code E
Test duration : 96hr.
5 Temperature
Test Method 105
5 ( 0 : 1 )
Cycle Test temp. :
Low temp. -40
±
5
℃
High temp. 125
±
5
℃
RT 5 ~ 35
℃
Dwell time : High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
Number of cycles : 100 cycles
6
Thermal Shock
+0
Test Method 307
5
( 0 : 1 )
Test temp. : High temp. 100
-5
℃
method Ⅰ
+5
Condition code A
Low temp. 0
-0
℃
Used liquid : Water with ice and boiling water
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
Number of cycles : 10 cycles
Mechanical Tests
Environment Tests
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Reliability Test Items
Test
cate-
gories
Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of
sample
Accept-
ance
number
1 High temperature
Test Method 101
5 ( 0 : 1 )
Reverse Bias Test temp. :
Ta = 125
±
5
℃
(Tj
≦
150
℃
)
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
VGE = 0V
Test duration : 1000hr.
2 High temperature
Test Method 101
5 ( 0 : 1 )
Bias (for gate) Test temp. :
Ta = 125
±
5
℃
(Tj
≦
150
℃
)
Bias Voltage : VC = VGE = +20V or -20V
Bias Method : Applied DC voltage to G-E
VCE = 0V
Test duration : 1000hr.
3 Temperature
Test Method 102
5 ( 0 : 1 )
Humidity Bias Test temp. :
85
±
2
o
C
Condition code C
Relative humidity :
85
±
5%
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
VGE = 0V
Test duration : 1000hr.
4 Intermitted ON time : 2 sec.
Test Method 106
5 ( 0 : 1 )
Operating Life OFF time : 18 sec.
(Power cycle) Test temp. :
Tj=100±5 deg
( for IGBT )
Tj
≦
150
℃
, Ta=25±5
℃
Number of cycles : 15000 cycles
Endurance TestsEndurance Tests
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Note
Lower limit Upper limit
Electrical Leakage current ICES - USL×2 mA
characteristic ±IGES - USL×2 A
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage VCE(sat) - USL×1.2 V
Forward voltage VF - USL×1.2 V
Thermal IGBT VGE - USL×1.2 mV
resistance or VCE
FWD VF - USL×1.2 mV
Isolation voltage Viso Broken insulation -
Visual Visual inspection
inspection Peeling - The visual sample -
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note :
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8
Reliability Test Results
Test
cate-
gorie
s
Test items
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of test
sample
Number
of
failure
sample
1 Terminal Strength
Test Method 401
5 0
(Pull test)
MethodⅠ
2 Mounting Strength
Test Method 402
5 0
methodⅡ
3 Vibration
Test Method 403
5 0
Condition code B
4 Shock
Test Method 404
5 0
Condition code B
1 High Temperature Storage
Test Method 201
5 0
2 Low Temperature Storage
Test Method 202
5 0
3 Temperature Humidity
Test Method 103
5 *
Storage
Test code C
4 Unsaturated
Test Method 103
5 0
Pressurized Vapor
Test code E
5 Temperature Cycle
Test Method 105
5 0
6 Thermal Shock
Test Method 307
5 0
method Ⅰ
Condition code A
1 High temperature Reverse Bias
Test Method 101
5 *
2 High temperature Bias
Test Method 101
5 0
( for gate )
3 Temperature Humidity Bias
Test Method 102
5 *
Condition code C
4 Intermitted Operating Life
Test Method 106
5 0
(Power cycling)
( for IGBT )
* under confirmation
Mechanical Tests
Environment Tests
Endurance Tests
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Dynamic Gate charge (typ.)Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25
o
C
Vcc=600V, Ic=150A, Tj=25
o
C
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25
o
C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125
o
C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25
o
C / chip
0
100
200
300
400
0 1 2 3 4 5
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
8V
10V
12V15VVGE=20V
0
100
200
300
400
0 1 2 3 4 5
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [A ]
8V
10V
12V15VVGE=20V
0
100
200
300
400
0 1 2 3 4 5
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
Tj=125
o
C
Tj=25
o
C
0
2
4
6
8
10
5 10 15 20 25
Gate-Emitter voltage : VGE [ V ]
Ic=75A
Ic=150A
Ic=300A
Collector-Emitter voltage : VCE [ V ]
0.1
1.0
10.0
100.0
0 10 20 30
Collector-Emitter voltage : VCE [ V ]
Cies
Capacitance : Cies, Coes, Cres [ nF ]
Coes
Cres
0 200 400 600 800
Gate charge : Qg [ nC ]
Collector- Emitter voltage : VCE[ 200V/div ]
Gate-Emitter voltage : VGE [ 5V/div ]
VGE
VCE
0
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Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=150A, VGE=±15V,
Switching time vs. Gate resistance (typ.)
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=2.2Ω, Tj=25
o
C Vcc=600V, VGE=±15V, RG=2.2Ω, Tj=125
o
C
Tj=25
o
C Vcc=600V, VGE=±15V, RG=2.2Ω
+VGE=15V, -VGE <= 15V, RG >= 2.2Ω,
Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
Vcc=600V, Ic=150A, VGE=±15V, Tj=125
o
C Tj <= 125
o
C
10
100
1000
10000
0 50 100 150 200 250 300
Collector current : Ic [ A ]
ton
tr
toff
tf
Switching time : ton, tr, toff, tf [ nsec ]
10
100
1000
10000
0 50 100 150 200 250 300
Collector current : Ic [ A ]
tf
tr
toff
ton
Switching time : ton, tr, toff, tf [ nsec ]
10
100
1000
10000
1 10 100 1000
Gate resistance : RG [ Ω ]
toff
ton
Switching time : ton, tr, toff, tf [ nsec ]
tr
tf
0
5
10
15
20
25
0 50 100 150 200 250 300
Collector current : Ic [ A ]
Eoff(125
o
C)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon(125
o
C)
Eoff(25
o
C)
Eon(25
o
C)
Err(125
o
C)
Err(25
o
C)
0
10
20
30
40
1 10 100 1000
Gate resistance : RG [ Ω ]
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon
Eoff
Err
0
100
200
300
400
0 400 800 1200 1600
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
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Transient thermal resistance (max.)
Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)
chip Vcc=600V, VGE=±15V, RG=2.2Ω
0
100
200
300
400
0 1 2 3 4
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Tj=25
o
C
Tj=125
o
C
10
100
1000
0 50 100 150 200 250 300
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
trr(125
o
C)
trr(25
o
C)
Irr(125
o
C)
Irr(25
o
C)
0.001
0.010
0.100
1.000
0.001 0.010 0.100 1.000
Pulse width : Pw [ sec ]
IGBT
FWD
Thermal resistance : Rth(j-c) [
o
C/W ]
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Warnings
-This product shall be used within its absolute maximum rating (voltage, current, and temperature).　This product
may be broken in case of using beyond the ratings.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する
場合があります。
-Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment
from causing secondary destruction, such as fire, its spreading, or explosion.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず
付けて火災，爆発，延焼等の２次破壊を防いでください。
-Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命
を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
-If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。
-Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is
classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product. In application
which has such frequent rise and down of Tc, well consideration of product life time is necessary.
本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)。パワーサイクル耐量にはこのΔTjによる
場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による熱ストレスであり、本製品をご使用する際
の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分留意してご使用下さい。
-Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor
contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。　端子の変形により、接触不良などを引き起こす場合があります。
-Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification.
Too large convex
of cooling fin
may cause isolation breakdown and this may lead to a critical accident.
On the other hand, too
large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will
be worse and over heat destruction may occur.
冷却フィンはネジ取り付け位置間で平坦度を
100mm
で
100um
以下、表面の粗さは
10um
以下にして下さい。　過大な凸反り
があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、
本製品と冷却フィンの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。
-In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)
素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、
塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。
コンパウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。
(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)
-It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊
する可能性があります。
-If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some
countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。
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13
Cautions
-Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
design, spread-fire-preventive design, and malfunction-protective design.
富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保
のための手段を講じて下さい。
-The application examples described in this specification only explain typical ones that used the Fuji Electric Device
Technology
products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、
本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
-The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. W hen you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems,　please apply after confirmation
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
Warnings
-Never add the excessive mechanical stress to the main or control terminals when the product is applied to
equipments. The module structure may be broken.
素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。
-In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent
this malfunction. (Recommended value : -VGE = -15V)
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に-VGEは十分な値で
設定して下さい。　（推奨値 : -VGE = -15V)
-In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in
the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ
条件（+VGE, -VGE, RG等）でご使用下さい。
-This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between
C-E terminals. Use this product within its absolute maximum voltage.
VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。VCEは必ず絶対定格の範囲内
でご
使用下
さい
。
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