MSC1318.PDF 10-25-99
MRF581/MRF581A
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter MRF581 MRF581A Unit
VCEO Collector-Emitter Voltage 18 15 Vdc
VCBO Collector-Base Voltage 30 Vdc
VEBO Emitter-Base Voltage 2.5 Vdc
ICCollector Current 200 mA
Thermal Data
PDTotal Device Dissipation @ TC = 50ºC
Derate above 50ºC 2.5
25 Watts
mW/ ºC
PDTotal Device Dissipation @ TC = 25ºC
Derate above 25ºC 1.25
10 Watts
mW/ ºC
Tstg Storage Junction Temperature Range -65 to +150 ºC
TJmax Maximum Junction Temperature 150 ºC
Macro X
Features
• Low Noise - 2.5 dB @ 500 MHZ
• High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MSC1318.PDF 10-25-99
MRF581/MRF581A
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage MRF581
(IC = 5.0 mAdc, IB = 0) MRF581A 18
15 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0) 30 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 2.5 - - Vdc
ICBO Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc) - - 0.1 mA
IEBO Collector Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc) - - 0.1 mA
(on)HFE DC Current Gain MRF581
(IC = 50 mAdc, VCE = 5.0 Vdc) MRF581A 50
90 -200
250 -
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
COB Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) -2.0 3.0 pF
Ftau Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) -5.0 -GHz
MSC1318.PDF 10-25-99
MRF581/MRF581A
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
NFmin Minimum Noise Figure MRF581
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) MRF581A -2.5
2.0 3.0
3.0 dB
GNF Power Gain @ NFmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) 13 15.5 dB
GU max Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz -17.8 -dB
MSG Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz -20 -dB
|S21|2Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz 14 15 -dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz) |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 .610 -137 23.8 116 .026 46 .522 -78
200 .659 -161 13.2 98 .033 47 .351 -106
300 .671 -171 9.0 89 .040 51 .304 -120
400 .675 -178 6.8 83 .047 55 .292 -128
500 .677 176 5.5 77 .055 58 .293 -132
600 .678 172 4.6 72 .064 61 .299 -134
700 .677 168 4.0 68 .073 62 .306 -135
800 .679 184 3.5 64 .082 63 .314 -136
900 .678 160 3.1 60 .092 64 .322 -138
1000 .682 156 2.8 56 .102 65 .311 -139
MSC1318.PDF 10-25-99
MRF581/MRF581A
C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor C2, C3 — 1.0–10 pF, Johanson Capacitor
C7, C10 — 10 µF, Tantalum Capacitor R1 — 1.0 kΩ Res.
RFC — VK–200, Ferroxcube FB — Ferrite Bead, Ferroxcube, 56–590–65/3B
TL1, TL7, TL8 — Microstrip 0.162, x 0.600,TL2 — Microstrip 0.162, x 1.000,
TL3 — Microstrip 0.162, x 0.800,TL4 — Microstrip 0.162, x 0.440,
TL5 — Microstrip 0.120, x 0.440,TL6 — Microstrip 0.120, x 1.160,
TL9, TL10 — Microstrip 0.025, x 4.250,
Board Material — 0.0625, Thick Glass Teflon ε r = 2.55
Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure.
MSC1318.PDF 10-25-99
MRF581/MRF581A
Efficiency (%)
Freq (MHz)
Freq (MHz)
Gu Max (dB)
IC max (
mA)
Package
Device
IC max (mA)
RF (Low Power PA / General Purpose) Selection Guide
MACRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150
MACRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150
SO-8 MRF8372,R1,R2 NPN 870 0.75 8 55 12.5 16 200
POWER MACRO MRF557 NPN 870 1.5 8 55 12.5 16 400
POWER MACRO MRF557T NPN 870 1.5 8 55 12.5 16 400
MACRO X MRF559 NPN 512 0.5 10 65 7.5 16 150
MACRO X MRF559 NPN 512 0.5 13 60 12.5 16 150
TO-39 2N3866ANPN 400 1 10 45 28 30 400
SO-8 MRF3866, R1, R2 NPN 400 1 10 45 28 30 400
POWER MACRO MRF555 NPN 470 1.5 11 50 12.5 16 400
POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 16 400
SO-8 MRF4427, R2 NPN 175 0.15 18 60 12 20 400
TO-39 2N4427 NPN 175 110 50 12 20 400
POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500
POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500
TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 330
TO-39 2N6255 NPN 175 37.8 50 12.5 18 1000
TO-72 2N5179 NPN 200 20 6 12 50
Pout (watts)
GPE (dB)
GPE VCC
BVCEO
Type
Package
Device
Type
NF (dB)
NF IC (
mA)
NF VCE
GN (dB)
Ftau (MHz)
Ccb
(pF)
BVCEO
TO-39 2N5109 NPN 200 3 10 15 12 1200 3.5 20 400
TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400
SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400
TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50
TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40
TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150
TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30
TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50
MACRO T BFR91 NPN 500 1.9 2 5 11 16.5 5000 1 12 35
MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100
SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200
MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200
Macro BFR90 NPN 500 2.4 2 10 15 18 5000 1 15 30
TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50
TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40
MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200
TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200
MACRO X MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100
MACRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70
MACRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 1 12 35
MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30
TO-39 MRF545 PNP 14 1400 2 70 400
TO-39 MRF544 NPN 13.5 1500 70 400
RF (LNA / General Purpose) Selection Guide
1
2
3
2
3
4
1
2
4
1
8
5
Macro X
Power Macro
Macro T SO-8
RFRF Low Power PA, LNA, and General Purpose Discrete Selector GuideLow Power PA, LNA, and General Purpose Discrete Selector Guide
Low Cost RF Plastic Package Options
MSC1318.PDF 10-25-99
MRF581/MRF581A
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
1.
2.
3.
4.
