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c 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.B
PNP small signal transistor
BCX17
Small load switch transistor with high gain and Low saturation voltage.
Features Dimensions (Unit : mm)
(1) High gain and low saturation voltage.
(2) Ideal for small load s witching ap plications.
Complements the BCX19
Packaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
BCX17
T116
3000
Type
Absolute maximum ratings (Ta=25C)
Collector-emitter voltage (V
BE
=0)
Collector-emitter voltage (open base)
Emitter-base voltage
Collector current
Collector current (peak value)
Collector power dissipation
Junction temperature
Storage temperature
∗ Mounted on a 7
×
5
×
0.6 mm CERAMIC SUBSTRATE
∗2 Mounted on a 15
×
15
×
0.6 mm CERAMIC SUBSTRATE
Parameter
V
CES
V
CEO
V
EBO
P
C
Tj
Tstg
−50 V
V
V
A
°C
°C
−45
−5
−0.5
I
C
I
CM
A
−1
∗
0.2
0.35
W
W
150
−65 to 150
Symbol Limits Unit
∗2
0.425 W
Electrical characteristics (Ta=25C)
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cutoff current
Emitter-base cutoff current
Collector-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Collector-base cutoff current
Parameter Symbol
BVCES
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
I
CBO
Min.
−50
−45
−5
−
−
−
100
−
−
−
−
−
−
−
−
200
−
−
−
−
−
−0.1
−10
−0.62
600
70 −−
−
−
−5
VI
C= −50μA
IC= −10mA
IE= −50μA
VCB= −20V
VEB= −5V
IC/IB= −500mA/ −50mA
VCE= −1V, IC= −100mA
VCE= −1V, IC= −300mA
VCE= −5V, IE= −20mA, f=100MHz
VCB= −20V, Ta=150°C
V
V
μA
μA
V
−
MHz
μA
Typ. Max. Unit Conditions
VBE(on) −−−1.2 VCE/IC= −1V/ −500mAV
40 −VCE= −1V, IC= −500mA
Transition frequency
Each lead has same dimensions
(1)Emitter
(2)Base
(3)Collector
SST3
0.45
0.95
0.15
0.2Min.
2.4
1.3
2.9
0.95
(1)
(3)
0.95
(2)
1.9
0.4
Abbreviated symbol : GT1
BCX17 Data Sheet
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c 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.B
Electrical characteristics curves
Fig.1 Grounded emitter propagation
characteristics
0−0.4 −0.8 −1.2 −1.6
−1000
−500
−200
−100
−50
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
Ta=25°C
VCE=6V
COLLECTOR CURRENT : IC
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.2 Grounded emitter output
characteristics ( )
−40 −8−12 −16 −20
0
−40
−120
−80
−160
−200
−20
−100
−60
−140
−180
−1.0mA
−
0.9mA
−
0.8mA
−0.7mA
−
0.6mA
−0.5mA
−0.4mA
−0.3mA
−0.2mA
−0.1mA
IB=0mA
Ta=25°C
COLLECTOR CURRENT : IC
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.3 Grounded emitter output
characteristics ( )
−0.20 −0.4 −0.6 −0.8 −1.0
0
−100
−300
−200
−400
−500
−
12mA
−
10mA
−
8mA
−
6mA
−
4mA
I
B
=
−
2mA
−14mA
−16mA
−18mA
−20mA
Ta=25°C
COLLECTOR CURRENT : IC
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.4 DC current gain vs.
collector current
Ta=25°C
−1m −10m −100m −1
1
20
10
5
2
50
100
200
500
1k
V
CE
= −3V
−2V
−1V
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
Fig.5 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV)
COLLECTOR CURRENT : IC
(A)
Ta=25°C
−1m −10m −100m −1
−1
−20
−10
−5
−2
−50
−200
−100
−500
−1000
IC/IB=50
20
10
Fig.6 Gain bandwidth product vs.
emitter current
EMITTER CURRENT : I
E
(A)
TRANSITION FREQUENCY : fT
(MHz)
Ta=25°C
VCE= −5V
1m 10m 100m 1
50
20
10
5
2
1
100
200
500
1000
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
Ta=25°C
f=1MHz
I
E
=0A
−0.1 −1−10 −100
1
20
10
5
2
50
100
200
500
1000
C
ib
C
ob
R1120
A
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