HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES * Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz * Flat-lead 4-pin thin-type super minimold (M04) package * Gate width: W g = 160 m APPLICATIONS * DBS LNB gain-stage, Mix-stage * Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3503M04 Order Number NE3503M04-A NE3503M04-T2 NE3503M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V75 type super minimold * 8 mm wide embossed taping * Pin 1 (Source), Pin 2 (Drain) face 3 kpcs/reel (M04) (Pb-Free) NE3503M04-T2B Supplying Form the perforation side of the tape NE3503M04-T2B-A 15 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3503M04-A ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS 3.0 V Drain Current ID IDSS mA Gate Current IG 80 A Total Power Dissipation Ptot 125 mW Channel Temperature Tch +125 C Storage Temperature Tstg 65 to +125 C Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10456EJ03V0DS (3rd edition) Date Published January 2009 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NE3503M04 RECOMMENDED OPERATING CONDITIONS (T A = +25C) Parameter Symbol MIN. TYP. MAX. Unit VDS 1 2 3 V <R> Drain to Source Voltage <R> Drain Current ID 5 10 15 mA Input Power Pin 0 dBm ELECTRICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3.0 V 0.5 10 A <R> Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 25 40 70 mA <R> Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100 A 0.2 0.7 1.5 V Transconductance gm VDS = 2 V, ID = 10 mA 40 55 mS <R> Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz 0.45 0.65 dB <R> Associated Gain Ga 11.0 12.0 dB 2 Data Sheet PG10456EJ03V0DS NE3503M04 TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Remark The graphs indicate nominal characteristics. Data Sheet PG10456EJ03V0DS 3 NE3503M04 S-PARAMETERS 4 Data Sheet PG10456EJ03V0DS NE3503M04 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) Data Sheet PG10456EJ03V0DS 5 NE3503M04 MOUNTING PAD DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) Reference 1 Reference 2 6 Data Sheet PG10456EJ03V0DS NE3503M04 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260C or below Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10456EJ03V0DS 7 NE3503M04 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. * Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. * Do not burn, destroy, cut, crush, or chemically dissolve the product. * Do not lick the product or in any way allow it to enter the mouth. 8 Data Sheet PG10456EJ03V0DS