IRKH71-16 - International Rectifier

75 A

95 A

ADD-A-pakTM GEN V Power Modules

THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR

IRK.71, .91 SERIES

Bulletin I27132 rev. I 09/04

www.irf.com

Parameters IRK.71 IRK.91 Units

IT(AV) or IF(AV)

@ 85°C

IO(RMS) (*) 165 210 A

ITSM @ 50Hz 1665 1785 A

IFSM @ 60Hz 1740 1870 A

I2t @ 50Hz 13.86 15.91 KA2s

@ 60Hz 12.56 14.52 KA2s

I2√t 138.6 159.1 KA2√s

VRRM range 400 to 1600 V

TSTG - 40 to 125 oC

TJ- 40 to125 oC

(*) As AC switch.

75 95 A

Major Ratings and Characteristics

Features

High Voltage

Industrial Standard Package

Thick Al metal die and double stick bonding

Thick copper baseplate

UL E78996 approved

3500VRMS isolating voltage

Mechanical Description

The Generation V of Add-A-pak module combine the

excellent thermal performance obtained by the usage

of Direct Bonded Copper substrate with superior

mechanical ruggedness, thanks to the insertion of a

solid Copper baseplate at the bottom side of the device.

The Cu baseplate allow an easier mounting on the

majority of heatsink with increased tolerance of surface

roughness and improve thermal spread.

The Generation V of AAP module is manufactured

without hard mold, eliminating in this way any possible

direct stress on the leads.

Benefits

Up to 1600V

Full compatible TO-240AA

High Surge capability

Easy Mounting on heatsink

Al203 DBC insulator

Heatsink grounded

Electrical Description

These modules are intended for general purpose high

voltage applications such as high voltage regulated power

supplies, lighting circuits, temperature and motor speed

control circuits, UPS and battery charger.

The electrical terminals are secured against axial pull-out:

they are fixed to the module housing via a click-stop

feature already tested and proved as reliable on other IR

modules.

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IRK.71, .91 Series

Bulletin I27132 rev. I 09/04

www.irf.com

On-state Conduction

IT(AV) Max. average on-state

current (Thyristors) 180o conduction, half sine wave,

IF(AV) Max. average forward TC

= 85oC

current (Diodes)

IO(RMS)Max. continuous RMS

on-state current. 165 210

As AC switch

ITSM Max. peak, one cycle 1665 1785 t=10ms No voltage

or non-repetitive on-state 1740 1870 t=8.3ms reapplied

IFSM or forward current 1400 1500 t=10ms 100% VRRM

1470 1570 t=8.3ms reapplied

1850 2000 t=10ms TJ = 25oC,

1940 2100 t=8.3ms no voltage reapplied

t Max. I2t for fusing 13.86 15.91 t=10ms No voltage

12.56 14.52 t=8.3ms reapplied

9.80 11.25 t=10ms 100% VRRM

8.96 10.27 t=8.3ms reapplied

17.11 20.00 t=10ms TJ = 25oC,

15.60 18.30 t= 8.3ms no voltage reapplied

I2√t Max. I2√t for fusing (1) 138.6 159.1 KA2√s t=0.1 to 10ms, no voltage reapplied,TJ = TJ max

VT(TO) Max. value of threshold 0.82 0.80 Low level (3)

voltage (2) 0.85 0.85 High level (4)

rtMax. value of on-state 3.00 2.40 Low level (3)

slope resistance (2) 2.90 2.25 High level (4)

VTM Max. peak on-state or ITM

= π x IT(AV)

VFM forward voltage IFM

= π x IF(AV)

di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,

of rise of turned on 150 A/µs ITM =π x I T(AV), Ig = 500mA,

current tr < 0.5 µs, tp > 6 µs

Max. holding current 250 TJ = 25oC, anode supply = 6V,

resistive load, gate open circuit

ILMax. latching current 400 TJ = 25oC, anode supply = 6V, resistive load

Parameters IRK.71 IRK.91 Units Conditions

Initial TJ = TJ max.

KA2s

mΩ

1.59 1.58 V

I(RMS) I(RMS)

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Type number

VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM

Voltage repetitive non-repetitive peak off-state voltage, IDRM

Code peak reverse voltage peak reverse voltage gate open circuit 125°C

-V V VmA

04 400 500 400

06 600 700 600

08 800 900 800

IRK.71/ .91 10 1000 1100 1000 15

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

Sinusoidal

half wave,

Initial TJ = TJ max.

75 95

TJ = TJ max

TJ = 25°C

(1) I2t for time tx = I2√t x √tx(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2(3) 16.7% x π x IAV < I < π x IAV

(4) I > π x IAV

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IRK.71, .91 Series

Bulletin I27132 rev. I 09/04

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IRRM Max. peak reverse and

IDRM off-state leakage current

at VRRM, VDRM

2500 (1 min) 50 Hz, circuit to base, all terminals

3500 (1 sec) shorted

dv/dt Max. critical rate of rise TJ = 125oC, linear to 0.67 VDRM,

of off-state voltage (5) gate open circuit

TJJunction operating

temperature range

Tstg Storage temp. range - 40 to 125

RthJC Max. internal thermal

resistance, junction 0.165 0.135 Per module, DC operation

to case

RthCS Typical thermal resistance

case to heatsink

T Mounting torque ± 10%

to heatsink

busbar 3

wt Approximate weight 110 (4) gr (oz)

Case style TO-240AA JEDEC

15 mA TJ = 125 oC, gate open circuit

Thermal and Mechanical Specifications

500 V/µs

Parameters IRK.71 IRK.91 Units Conditions

- 40 to 125

0.1

Triggering

Blocking

(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.

A mounting compound is recommended

and the torque should be rechecked after

a period of 3 hours to allow for the

spread of the compound

K/W

Mounting surface flat, smooth and greased

VINS RMS isolation voltage V

PGM Max. peak gate power 12 12

PG(AV) Max. average gate power 3.0 3.0

IGM Max. peak gate current 3.0 3.0 A

-VGM Max. peak negative

gate voltage

VGT Max. gate voltage 4.0 TJ = - 40°C

required to trigger 2.5 TJ = 25°C

1.7 TJ = 125°C

IGT Max. gate current 270 TJ = - 40°C

required to trigger 150 mA TJ = 25°C

80 TJ = 125°C

VGD Max. gate voltage TJ

= 125oC,

that will not trigger rated VDRM

applied

IGD Max. gate current TJ

= 125oC,

that will not trigger rated VDRM

applied

Parameters IRK.71 IRK.91 Units Conditions

0.25 V

6mA

Anode supply = 6V

resistive load

Anode supply = 6V

resistive load

°C

Parameters IRK.71 IRK.91 Units Conditions

Sine half wave conduction Rect. wave conduction

Devices Units

180o120o90o60o30o180o120o90o60o30o

IRK.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18

IRK.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

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IRK.71, .91 Series

Bulletin I27132 rev. I 09/04

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Outline Table

Dimensions are in millimeters and [inches]

IRK T 91 / 16 A S90

Device Code

1234

1- Module type

2- Circuit configuration (See Circuit Configuration table below)

3- Current code * *

4- Voltage code (See Voltage Ratings table)

5- A : Gen V

6- dv/dt code: S90 = dv/dt 1000 V/µs

No letter = dv/dt 500 Vµs

Ordering Information Table

* * Available with no auxiliary cathode.

To specify change: 71 to 72

91 to 92

e.g. : IRKT92/16A etc.

IRK.92 types

With no auxiliary cathode

NOTE: To order the Optional Hardware see Bulletin I27900

K2 G2

K1G1

(1)

(2)

(3)

(4) (5) (7) (6)

(1)

(2)

(3)

(4) (5)

(1)

(2)

(3)

(7)

(6)

IRKT IRKH IRKL IRKN

(1)

(2)

(3)

(4) (5)

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IRK.71, .91 Series

Bulletin I27132 rev. I 09/04

www.irf.com

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

100

110

120

130

0 1020304050607080

Maximum Allowable Case Temperature (°C)

30° 60° 90° 120°

180°

Average On-state Current (A)

Co nd uction Ang le

IRK.71.. Series

R (DC) = 0.33 K/ W

thJC

100

110

120

130

0 20 40 60 80 100 120

30° 60°

90°

120° 180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Conduction Period

IRK.71.. Series

R (DC) = 0.33 K/ W

thJC

Fig. 3 - On-state Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 4 - On-state Power Loss Characteristics

100

120

0 1020304050607080

180°

120°

90°

60°

30°

RM S Li m i t

Conduction Angle

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

IRK.71.. Series

Per Ju n c t io n

T = 125°C

100

120

140

0 20 40 60 80 100 120

180°

120°

90°

60°

30°

RM S Li m i t

Conduction Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

IRK.71.. Series

Pe r Ju n c t i o n

T = 125°C

700

800

900

1000

1100

1200

1300

1400

1500

1600

1 10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Pe a k Half Sine Wa ve On-st a t e Current (A )

Init ia l T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Ra ted Loa d Condition And With

Rated V Applied Following Surge.

RRM

IRK.71.. Series

Per Junc tion

600

800

1000

1200

1400

1600

1800

0.01 0.1 1

Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s)

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

Of Conduction May Not Be Maintained.

RRM

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

IRK.71.. Se rie s

Per Junction

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IRK.71, .91 Series

Bulletin I27132 rev. I 09/04

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Fig. 9 - On-state Power Loss Characteristics

Fig. 8 - On-state Power Loss Characteristics

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

= 0.1 K/ W - Delt a R

thS

0.3 K

0.5 K

1 K/W

2 K

0.2 K

100

200

300

400

500

600

0 20 40 60 80 100 120 140 160 180

Total Output Current (A)

Maximum Total Power Loss (W)

180°

(Sine)

180°

(Rect)

2 x IRK.71.. Series

Single Phase Bridge

Connected

T = 125°C

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

1 K/W

0.5 K

0.3 K

= 0.1 K

/W - Delta R

0.2 K

thS

100

200

300

400

500

600

700

800

0 40 80 120 160 200 240

Total Output Current (A)

Maximum Total Power Loss (W)

120°

(Rect)

3 x IRK.71.. Series

Th re e Ph a se Brid g e

Connected

T = 125°C

Fig. 7 - On-state Power Loss Characteristics

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

= 0.1

/W - Delta R

thS

3 K

1.5 K

1 K

0.7 K

0.5 K

0.4 K

0.3 K/W

0.2 K

100

150

200

250

0 20 40 60 80 100 120 140 160 180

180°

120°

90°

60°

30°

To t a l RM S Output Current (A)

Maximum Total On-state Power Loss (W)

Conduction Angle

IRK.71.. Series

Pe r M o d u l e

T = 1 2 5 ° C

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IRK.71, .91 Series

Bulletin I27132 rev. I 09/04

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Fig. 11 - Current Ratings CharacteristicsFig. 10 - Current Ratings Characteristics

100

110

120

130

0 20406080100

30° 60° 90°

120°

180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Cond uction Angle

IRK.91.. Series

R (DC) = 0.27 K/ W

thJC

100

110

120

130

0 20 40 60 80 100 120 140 160

30°

60°

90°

120° 180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Conduction Period

IRK.91.. Series

R (DC) = 0.27 K/ W

thJC

Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current

Fig. 13 - On-state Power Loss CharacteristicsFig. 12 - On-state Power Loss Characteristics

100

120

140

0 20406080100

RM S Li m it

Conduc tio n Angle

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

180°

120°

90°

60°

30°

IRK.91.. Series

Pe r Ju n c t i o n

T = 125°C

100

120

140

160

180

0 20 40 60 80 100 120 140 160

180°

120°

90°

60°

30°

RM S Li m i t

Conduction Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

IRK.91.. Se rie s

Pe r Ju n c t i o n

T = 125°C

700

800

900

1000

1100

1200

1300

1400

1500

1600

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Peak Half Sine Wave On-state Current (A)

Init ial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

IRK.91.. Serie s

Per Junction

600

800

1000

1200

1400

1600

1800

0.01 0.1 1

Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s)

Versus Pulse Train Duration. Control

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

RRM

Of Conduction May Not Be Maintained.

Ma ximum No n Re p e titive Surg e Curre nt

IRK.91.. Se ries

Per Junction

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IRK.71, .91 Series

Bulletin I27132 rev. I 09/04

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Fig. 17 - On-state Power Loss Characteristics

Fig. 18 - On-state Power Loss Characteristics

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

0.5 K

0.3 K

0.2 K

R = 0.1 K/W - Delta R

1 K

2 K

thS

100

200

300

400

500

600

0 40 80 120 160 200

Tota l Output Current (A)

Maximum Total Power Loss (W)

180°

(Sine)

180°

(Rect)

2 x IRK.91.. Series

Single Phase Bridge

Connected

T = 125°C

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

0.5 K

1 K

0.3 K

0.2 K

= 0.1 K

/W - Delta R

thS

100

200

300

400

500

600

700

800

900

0 40 80 120 160 200 240 280

Total Output Current (A)

Maximum Total Power Loss (W)

120°

(Rect)

3 x IRK.91.. Series

Three Phase Bridge

Connected

T = 125°C

Fig. 16 - On-state Power Loss Characteristics

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

1.5 K

3 K

1 K

0.7 K

0.5 K

0.3 K

0.2 K/W

= 0.1 K

/W - Delta R

thS

100

150

200

250

300

350

0 40 80 120 160 200 240

180°

120°

90°

60°

30°

Total RMS Output Current (A)

Maximum Total On-state Power Loss (W)

Conduction Angle

IRK.91.. Serie s

Pe r Mo d ule

T = 1 2 5 ° C

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IRK.71, .91 Series

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Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics

100

1000

0.5 1 1.5 2 2.5 3 3.5

T = 25°C

Instantaneous On-state Current (A)

Instantaneous On-state Voltage (V)

T = 125°C

IRK.91.. Series

Pe r Ju n c t io n

100

1000

0.511.522.533.54

T = 25 ° C

Instantaneous On-state Current (A)

Instantaneous On-state Voltage (V)

T = 125°C

IRK.71.. Series

Per Junction

Fig. 23 - Thermal Impedance ZthJC Characteristics

Fig. 22 - Recovery Current CharacteristicsFig. 21 - Recovery Charge Characteristics

100

120

140

10 20 30 40 50 60 70 80 90 100

Ma ximum Re verse Re covery Current - Irr (A)

Rate Of Fall Of Forward Current - di/dt (A/µs)

100 A

50 A

I = 200 A

20 A

10 A

IRK.71.. Series

IRK.91.. Series

T = 125 °C

100

200

300

400

500

600

700

10 20 30 40 50 60 70 80 90 100

100 A

50 A

Rate Of Fall Of On-state Current - di/dt (A/µs)

Maximum Reverse Recovery Charge - Qrr (µC)

I = 200 A

20 A

10 A

IRK.71.. Se ries

IRK.91.. Se ries

T = 125 °C

0.01

0.1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedance Z (K/W)

Pe r Ju n c t i o n

Steady State Value:

R = 0.33 K/ W

R = 0.27 K/ W

(DC Operation)

IRK.71.. Series

IRK.91.. Series

thJC

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IRK.71, .91 Series

Bulletin I27132 rev. I 09/04

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Fig. 24 - Gate Characteristics

0.1

100

0.001 0.01 0.1 1 10 100 1000

(b)

(a)

Rectangular gate pulse

(4) (3) (2) (1)

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

TJ = -40 °C

TJ = 25 ° C

TJ = 125 °C

a)Recommended load line for

b)Recommended load line for

VGD

IGD

Frequency Limited by PG(AV)

(1) PGM = 200 W, tp = 300 µs

(2) PGM = 60 W, tp = 1 ms

(3) PGM = 30 W, tp = 2 ms

(4) PGM = 12 W, tp = 5 ms

<= 30% ra ted di/ d t: 15 V, 40 ohms

tr = 1 µs, tp >= 6 µs

ra ted di/ d t: 20 V, 20 ohms

tr = 0.5 µs, tp >= 6 µs

IRK.71../ .91.. Series

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 09/04

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

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