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HL6321G/22G

AlGaInP Laser Diodes

ADE-208-598C (Z)

4th Edition

Dec. 2000

Description

The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure.

They are suitable as light sources for laser levelers and optical equipment for measurement.

Application

• Laser levelers

• Measurement

Features

• Visible light output: 635 nm Typ (nearly equal to He-Ne gas laser)

• Optical output power: 15 mW CW

• Low operating current: 105 mA Max

• Low operating voltage: 2.7 V Max

• TM mode oscillation

LD LDPD PD

1 1

3 3

Internal Circuit

• HL6321G Internal Circuit

• HL6322G

Package Type

• HL6321G/22G: G2

HL6321G/22G

Absolute Maximum Ratings (TC = 25°C)

Item Symbol Rated Value Unit

Optical output power PO15 mW

LD reverse voltage VR(LD) 2V

PD reverse voltage VR(PD) 30 V

Operating temperature Topr –10 to +50 °C

Storage temperature Tstg –40 to +85 °C

Optical and Electrical Characteristics (TC = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Optical output power PO15 — — mW Kink free

Threshold current Ith 20 55 75 mA

Operating current IOP — 85 105 mA PO = 15 mW

Operating voltage VOP — — 2.7 V PO = 15 mW

Slope efficiency ηs 0.3 — 0.7 mW/mA 9 (mW) / (I(12mW) – I(3mW))

Beam divergence

parallel to the junction θ// 5 8 11 deg. PO = 15 mW

Beam divergence

parpendicular to the junction θ⊥ 24 30 36 deg. PO = 15 mW

Lasing wavelength λp 625 635 642 nm PO = 15 mW

Monitor current IS0.07 0.20 0.45 mA PO = 15 mW, VR(PD) = 5 V

HL6321G/22G

Typical Characteristic Curves

00 150

25°C

50°C

TC = −10°C

VR(PD) = 5V

TC = 25°C

TC = 10°C

0.20

0.15

0.10

0.05

010515

10050

0.2

0.4

0.6

0.8

1.0

−40 0 40

PO = 15mW

TC = 25°C

625 630 635 640 645 650

PO = 15mW

PO = 5mW

PO = 1mW

TC = 25°C

Optical output power, PO (mW)

Foward current, IF (mA)

Optical Output Power vs. Foward Current

Optical output power, PO (mW)

Monitor current, IS (mA)

Monitor Current vs. Optical Output Power

Angle, θ (deg.)

Relative intensity

Far Field Pattern

Lasing Spectrum

Wavelength, λp (nm)

Relative intensity

HL6321G/22G

Typical Characteristic Curves (cont)

−10 0 10 20 30 40

0.1

0.2

0.3

0.4

PO = 15 mW

VR(PD) = 5 V

630

635

645

650

640

−10 0 10 20 30 40 50

PO = 15 mW

−10 0 5040302010

−10 0 5040302010 0

0.2

0.4

0.6

0.8

1.0

200

100

Case temperature, TC (°C) Case temperature, TC (°C)

Threshould current, Ith (mA)

Threshold Current vs. Case Temperature Slope Efficiency vs. Case Temperature

Slope efficiency, ηs (mW/mA)

Monitor Current vs. Case Temprature

Case temperature, TC (°C)

Monitor current, IS (mA)

Lasing Wavelength vs. Case Temperature

Lasing wavelength, λp (nm)

Case temperature, TC (°C)

HL6321G/22G

Typical Characteristic Curves (cont)

002 64 810

10 TC = 25°C

NA = 0.55

0 5 10 15

200

400

600

800 NA = 0.4

1000 TC = 25°C

Optical output power, PO (mW)

Astigmastism, AS (µm)

Astigmastism vs. Optical Output Power Polarization Ratio vs. Optical Output Power

Optical output power, PO (mW)

Polarization ratio

Reverse (C : 100pF, R : 1.5kΩ)

N = 5pcs

judgment : ∆IO ≤ 10%

Survival Rate (%)

Electrostatic Destruction (Reverse)

Survival Rate (%)

Applied Voltage (V) Applied Voltage (kV)

Electrostatic Destruction (Forward)

Forward (C : 100pF, R : 1.5kΩ)

N = 5pcs

judgment : ∆IO ≤ 10%

100

00231

0 500 1000

100

HL6321G/22G

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LD/G2

—

1.1 g

Unit: mm

123

9.0

–0.025

φ1.0 ± 0.1

0.4

+0.1

–0

(0.65)

(90°)

7.2

+0.3

–0.2

φ6.2 ± 0.2

( 2.0)

Emitting Point

2.45

1.5 ± 0.1

9 ± 1

3 – 0.45 ± 0.1

3.5 ± 0.2 0.3

Glass

φ2.54 ± 0.35

HL6321G/22G

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The

laser beam shall be observed or adjusted through infrared camera or equivalent.

HL6321G/22G

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Ltd.

Hitachi Tower

16 Collyer Quay #20-00,

Singapore 049318

Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg

Asia : http://sicapac.hitachi-asia.com

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road,

Hung-Kuo Building,

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower,

World Finance Centre,

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon,

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://www.hitachi.com.hk

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 585160

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straβe 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

For further information write to:

Colophon 2.0