ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM
= 3300
V
IF = 100
A
Die size: 13.6 x 13.6 mm
Doc. No. 5SYA1661
-
02 Feb. 05
• Fast and soft reverse-recovery
• Low losses
• High SOA
• Passivation: SIPOS Nitride plus Polyimide
Maximum rated values 1)
Parameter Symbol Conditions min max Unit
Repetitive peak reverse voltage VRRM 3300
V
Continuous forward current IF 100 A
Repetitive peak forward current IFRM Limited by Tvjmax 200 A
Junction temperature Tvj -40 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter Symbol Conditions min typ max Unit
Tvj = 25 °C
2.0 2.3 2.7 V
Continuous forward voltage VF IF = 100 A Tvj = 125 °C
2.35 V
Tvj = 25 °C
5 µA
Continuous reverse current IR VR = 3300 V Tvj = 125 °C
2.5 7 mA
Tvj = 25 °C
115 A
Peak reverse recovery current Irr Tvj = 125 °C
140 A
Tvj = 25 °C
65 µC
Recovered charge Qrr Tvj = 125 °C
110 µC
Tvj = 25 °C
470 ns
Reverse recovery time trr Tvj = 125 °C
800 ns
Tvj = 25 °C
85 mJ
Reverse recovery energy Erec
IF = 100 A,
VR = 1800 V,
di/dt = 550 A/µs,
Lσ = 1200 nH,
Inductive load,
Switch:
2x 5SMX12M3300
Tvj = 125 °C
145 mJ
2) Characteristic values according to IEC 60747 - 2
Fast-Diode Die
5SLX 12M3301
5SLX 12M3301
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1661-02 Feb. 05 page 2 of 3
0
25
50
75
100
125
150
175
200
0 0.5 1 1.5 2 2.5 3 3.5 4
VF [V]
IF [A]
25°C
125°C
0
50
100
150
200
250
0 50 100 150 200 250
IF [A]
Erec [mJ], Qrr [µC], Irr [A]
Qrr
Erec
Irr
V
CC = 1800 V
di/dt = 550 A/µs
Tvj = 125 °C
Lσ = 1200 nH
Fig. 1 Typical diode forward characteristics Fig. 2 Typical reverse recovery characteristics
vs. forward current
-150
-100
-50
0
50
100
150
0 2 4 6 8
time [us]
IR [A]
-2100
-1400
-700
0
700
1400
2100
VR [V]
VCC = 1800 V
IF = 100 A
di/dt = 550 A/µs
Tvj = 125 °C
Lσ = 1200 nH
0
25
50
75
100
125
150
175
200
0 200 400 600 800 1000 1200
di/dt [A/µs]
Erec [mJ]
0
50
100
150
200
250
300
350
400
Qrr [µC], Irr [A]
Qrr
Erec
Irr
V
CC = 1800 V
IF = 100 A
Tvj = 125 °C
Lσ = 1200 nH
Fig. 3 Typical diode reverse recovery behaviour Fig. 4 Typical reverse recovery vs. di/dt
5SLX 12M3301
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1661-02 Feb. 05
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Mechanical properties
Parameter Unit
Overall die
L x W 13.6 x 13.6 mm
exposed
front metal
L x W 10.38 x 10.38 mm
Dimensions
thickness 385 ± 15 µm
front (A) AlSi1 4 µm
Metallization 3) back (K) Al / Ti / Ni / Ag 1.2 µm
3) For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
A (Anode)
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
