10/31/12
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Surface Mount
Features
Description
Ultrafast, Soft Recovery Diode
FRED
VR = 200V
IF(AV) = 25A
trr = 35ns
Note: D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
HFB25HJ20
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Parameter Max. Units
VRCathode to Anode Voltage 200 V
IF(AV) Continuous Forward Current, TC = 106°C 25
IFSM Single Pulse Forward Current, TC = 25°C 150
PD @ TC = 25°C Maximum Power Dissipation 70 W
TJ, TSTG Operating Junction and Storage Temperature Range -55 to +150 °C
A
Absolute Maximum Ratings
ANODE
ANODE
CATHODE
CASE STYLE
SMD-0.5
These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
conditioning systems. An extensive characterization of the recovery behavior for different values of current,
temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors
drives and other applications where switching losses are significant portion of the total losses.
•ESD Rating: Class NS per MIL-STD-750, Method 1020
PD-94150C
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HFB25HJ20
See Fig. 2
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 200 — — V IR = 100µA
VFForward Voltage — — 1.18 IF = 25A, TJ =-55°C
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LSSeries Inductance — 4.8 — nH Measured from center of cathod
pad to center of anode pad
CTJunction Capacitance, See Fig. 3 — — 78 pF VR = 200V
IR Reverse Leakage Current — — 10 µA VR = VR Rated
See Fig. 2 — — 250 µA VR = VR Rated, TJ = 125°C
A/µs
nC
A
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
A/µs
nC
A
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time — — 35 ns IF = 1.0A,VR = 30V, dif/dt = 200A/µs
trr1 Reverse Recovery Time — 28 — ns TJ = 25°C See Fig.
trr2 — 43— T
J = 125°C 5 IF = 25A
IRRM1 Peak Recovery Current — 3.9 — TJ = 25°C See Fig.
IRRM2 — 6.1 — TJ = 125°C 6 VR = 160V
Qrr1 Reverse Recovery Charge — 61 — TJ = 25°C See Fig.
Qrr2 — 146 — TJ = 125°C 7 dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current — 820 — TJ = 25°C See Fig.
di(rec)M/dt2 During tb— 1560 — TJ = 125°C 8
Thermal - Mechanical Characteristics
Parameter Typ. Max. Units
RthJC Junction-to-Case — 1.76
Wt Weight 1.0 — g
°C/W
See Fig. 1 — — 0.94 IF = 10A, TJ = 25°C
— — 1.07 IF = 25A, TJ = 25°C
— — 1.19 IF = 50A, TJ = 25°C
— — 0.88 IF = 25A, TJ =125°C
V
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HFB25HJ20
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
Fig. 2 - Typical Reverse Current Vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Vs.
Instantaneous Forward Current
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - V F (V)
1
10
100
Instantaneous Forward Current - IF (A)
Tj = -55°C
Tj = 125°C
Tj = 25°C
040 80 120 160 200
Reverse Voltage - V R (V)
0.0001
0.001
0.01
0.1
1
10
Reverse Current - I R (µA)
125°C
75°C
25°C
100°C
040 80 120 160 200
Reverse Voltage - V R (V)
10
100
1000
Junction Capacitance - C T (pF)
TJ = 25°C
1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
P
t
t
DM
1
2
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Fig. 7 - Typical Stored Charge Vs. dif/dt Fig. 8 - Typical di(rec)M/dt Vs. dif/dt
Fig. 5 - Typical Reverse Recovery Vs. dif/dt, Fig. 6 - Typical Recovery Current Vs. dif/dt,
100 1000
dif / dt - ( A / µs )
20
30
40
50
trr - ( ns )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 12.5A
IF = 50A
IF = 25A
100 1000
dif / dt - ( A / µs )
1
10
100
IRRM - ( A )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 12.5A
IF = 50A
IF = 25A
100 1000
dif / dt - ( A / µs )
10
100
1000
Qrr - ( nC )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 12.5A
IF = 50A
IF = 25A
100 1000
dif / dt - ( A / µs )
100
1000
10000
di ( rec )M / dt - ( A / µs )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 12.5A
IF = 50A
IF = 25A
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HFB25HJ20
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9 - Reverse Recovery Parameter Test Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
Ω
G
D
S
dif/dt
ADJUST
Case Outline and Dimensions — SMD-0.5
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2012
