© 2013 IXYS CORPORATION, All Rights Reserved DS100534B(04/13)
High Voltage
Power MOSFETs
Features
zHigh Blocking Voltage
z High Voltage Package
zFast Intrinsic Diode
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh Voltage Power Supplies
zCapacitor Discharge
zPulse Circuits
IXTA4N150HV
IXTT4N150HV VDSS = 1500V
ID25 = 4A
RDS(on) ≤ ≤
≤ ≤
≤ 6ΩΩ
ΩΩ
Ω
N-Channel Enhancement Mode
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1500 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C4A
IDM TC= 25°C, Pulse Width Limited by TJM 12 A
IATC= 25°C 4 A
EAS TC= 25°C 350 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 5 V/ns
PDTC= 25°C 280 W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
Weight TO-263 2.5 g
TO-268 4.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1500 V
VGS(th) VDS = VGS, ID = 250μA 2.5 5.0 V
IGSS VGS = ±30V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 10 μA
TJ = 125°C 100 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 6 Ω
Preliminary Technical Information
G = Gate D = Drain
S = Source Tab = Drain
TO-268
G
D (Tab)
S
G
S
TO-263
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA4N150HV
IXTT4N150HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-268 (HV) Outline
PIN:
1 - Gate
2 - Source
3 - Drain
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 2.8 4.6 S
Ciss 1576 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 105 pF
Crss 35 pF
td(on) 19 ns
tr 23 ns
td(off) 42 ns
tf 22 ns
Qg(on) 44.5 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 7.7 nC
Qgd 21.7 nC
RthJC 0.45 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 4 A
ISM Repetitive, Pulse Width Limited by TJM 16 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 0.9 μs
IRM 15.0 A
QRM 6.7 μC
IF = 2A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5Ω (External)
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-263 (HV) Outline
PIN: 1 - Gate
2 - Source
3 - Drain
© 2013 IXYS CORPORATION, All Rights Reserved
Fi g . 1. Ou tp ut Ch ar acteristi cs @ T
J
= 25ºC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 4 8 1216202428
V
DS
- Volt s
I
D
- Amperes
V
GS
= 10V
7V
5
V
4
V
6
V
Fi g . 2. Ou tp ut Ch ar acter istics @ T
J
= 125º C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 5 10 15 20 25 30 35 40
V
DS
- Volt s
I
D
- Amperes
V
GS
= 10V
6V
4
V
5V
Fig. 3. R
DS(on)
Normalized to I
D
= 2A Value vs.
Jun cti on Temper atu re
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 4A
I
D
= 2A
Fig. 4. R
DS(on)
No r malized to I
D
= 2A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0.00.51.01.52.02.53.03.54.04.55.0
I
D
- Amperes
R
DS(on)
- Normali zed
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Input Admittance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
3.5 4.0 4.5 5.0 5.5 6.0
V
GS
- V o lt s
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fi g. 5. Maximu m D r ai n C u rren t vs.
Case Temp er atu re
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXTA4N150HV
IXTT4N150HV
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA4N150HV
IXTT4N150HV
Fig. 7. Transconductance
0
1
2
3
4
5
6
7
8
9
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
2
4
6
8
10
12
14
0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GS
- Volt s
V
DS
= 750V
I
D
= 2A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Fo r war d -B i as Safe O p er ati n g Area
0.01
0.1
1
10
100
10 100 1000 10000
V
DS
- Vo lts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC 100ms
Fi g . 11. B r eakd o wn an d Th r esh o l d Vol tag es vs.
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
BV
DSS
& V
GS(th)
- Normalized
BV
DSS
V
GS(th)
© 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_4N150 (4A) 9-12-12-C
Fi g . 13. Maxi mu m Tr an si en t Th er mal Imp ed an ce
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXTA4N150HV
IXTT4N150HV
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
