J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 1
December 2010
J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Features
• This device is designed for VHF/UHF amplifier, oscillator and mixer applications.
• As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.
• Sourced from Process 92.
• Source & Drain are interchangeable.
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
Symbol Parameter Value Units
VDS Drain-Sour ce Voltage 25 V
VGS Gate-Source Voltage -25 V
IGF Forward Gate Current 10 mA
TJ, Tstg Operating and Storage Junction Temperature Range - 55 to +150 °C
Symbol Parameter Max. Units
J309-J310 *MMBFJ309-310
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 127 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
J309 MMBFJ309
SOT-23 Mark MMBFJ309 : 6U
G
D
S
J310 MMBFJ310
MMBFJ310 : 6T
GSDTO-92
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 2
Electrical Characteristics Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0 -25 V
IGSS Gate Reverse Current VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, Ta = 125°C -1.0
-1.0 nA
μA
VGS(off) Gate-Source Cutoff Voltage VDS = 10V, ID = 1.0nA 309
310 -1.0
-2.0 -4.0
-6.5 V
V
On Characteristics
IDSS Zero-Gate Voltage Drain
Current* VDS = 10V, VGS = 0 309
310 12
24 30
60 mA
mA
VGS(f) Gate-Source Forward Voltage VDS = 0, IG = 1.0mA 1.0 V
Small Signal Characteristics
Re(yis) Common-Source Input
Conductance VDS = 10V, ID = 10mA, f = 100MHz
309
310 0.7
0.5 mmhos
mmhos
Re(yos) Common-Source Output
Conductance VDS = 10V, ID = 10mA, f = 100MHz 0.25 mmhos
Gpg Common-Gate Power Gain VDS = 10V, ID = 10mA, f = 100MHz 16 dB
Re(yfs) Common-Source Forward
Transconductance VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos
Re(yig) Common-Gate Input
Conductance VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos
gfs Common-Source Forward
Transconductance VDS = 10V, ID = 10mA, f = 1.0kHz
309
310 10,000
8,000 20,000
18,000 μmhos
μmhos
goss Common-Source Output
Conductance VDS = 10V, ID = 10mA, f = 1.0kHz 150 μmhos
gfg Common-Gate Forward
Conductance VDS = 10V, ID = 10mA, f = 1.0kHz
309
310 13,000
12,000 μmhos
μmhos
gog Common-Gate Output
Conductance VDS = 10V, ID = 10mA, f = 1.0kHz
309
310 100
150 μmhos
μmhos
Cdg Drain-Gate Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 2.0 2.5 pF
Csg Source-Gate Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 4.1 5.0 pF
NF Noise Figure VDS = 10V, ID = 10mA, f = 450MHz 3.0 dB
enEquivalent Short - Circuit Input
Noise Voltage VDS = 10V, ID = 10mA, f = 100Hz 6.0 nV/ Hz
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 3
Typical Performance Characteristics
T ransfer Characteristics T ransfer Characteristics
T ransfer Characteristics
Forward Transadmittance
Transfer Characteristics
Input Admittance
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 4
Typical Performance Characteristics (continued)
Capacitance vs. Voltage
Output Admittance
Output Conductance vs.
Drain Current
Common Drain-Source
Noise Voltage vs. Frequency Reverse Transadmittance
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 5
Typical Performance Characteristics (continued)
T ransconductance vs.
Drain Current
Parameter Interactions
Leakage Current vs. Voltage
Power Dissipation vs
Ambient T emperature
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATU RE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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