LM5067MMX-2/NOPB - NATIONAL SEMICONDUCTOR

LM5067 Negative Hot Swap / Inrush Current Controller with Power Limiting

1 Features

• Wide operating range: –9 V to –80 V

• In-rush current limit for safe board insertion into

live power sources

• Programmable maximum power dissipation in the

external pass device

• Adjustable current limit

• Circuit breaker function for severe overcurrent

events

• Adjustable undervoltage lockout (UVLO) and

hysteresis

• Adjustable overvoltage lockout (OVLO) and

hysteresis

• Initial insertion timer allows ringing and transients

to subside after system connection

• Programmable fault timer avoids nuisance trips

• Active high open drain POWER GOOD output

• Available in latched fault and automatic restart

versions

2 Applications

• Server backplane systems

• In-Rush current limiting

• Solid state circuit breaker

• Transient voltage protector

• Solid state relay

• Undervoltage lock-out

• Power good detector and indicator

3 Description

The LM5067 negative hot swap controller provides

intelligent control of the power supply connections

during insertion and removal of circuit cards from a

live system backplane or other “hot” power sources.

The LM5067 provides in-rush current control to limit

system voltage droop and transients. The current limit

and power dissipation in the external series pass N-

Channel MOSFET are programmable, ensuring

operation within the Safe Operating Area (SOA). In

addition, the LM5067 provides circuit protection by

monitoring for over-current and over-voltage

conditions. The POWER GOOD output indicates

when the output voltage is close to the input voltage.

The input under-voltage and over-voltage lockout

levels and hysteresis are programmable, as well as

the fault detection time. The LM5067-1 latches off

after a fault detection, while the LM5067-2

automatically attempts restarts at a fixed duty cycle.

The LM5067 is available in a 10-pin VSSOP package

and a 14-pin SOIC package.

Device Information (1)

PART NUMBER PACKAGE BODY SIZE (NOM)

LM5067 VSSOP (10) 3.00 mm x 3.00 mm

SOIC (14) 8.99 mm x 7.49 mm

(1) For all available packages, see the orderable addendum at

the end of the datasheet.

GND

VCC

VEE SENSETIMER

UVLO/EN

GATE

OVLO

PGD

LM5067

PWR

OUT

LOAD

- 48V

Negative Power Bus In-Rush and Fault Protection

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

Table of Contents

1 Features............................................................................1

2 Applications..................................................................... 1

3 Description.......................................................................1

4 Revision History.............................................................. 2

5 Device Comparison......................................................... 3

6 Pin Configuration and Functions...................................4

7 Specifications.................................................................. 5

7.1 Absolute Maximum Ratings........................................ 5

7.2 ESD Ratings............................................................... 5

7.3 Recommended Operating Conditions.........................5

7.4 Thermal Information....................................................5

7.5 Electrical Characteristics.............................................6

7.6 Switching Characteristics............................................7

7.7 Typical Characteristics................................................8

8 Detailed Description......................................................12

8.1 Overview................................................................... 12

8.2 Functional Block Diagram......................................... 13

8.3 Feature Description...................................................13

8.4 Device Functional Modes..........................................18

9 Application and Implementation.................................. 19

9.1 Application Information............................................. 19

9.2 Typical Application.................................................... 19

10 Power Supply Recommendations..............................37

10.1 Operating Voltage................................................... 37

11 Layout........................................................................... 37

11.1 Layout Guidelines................................................... 37

11.2 Layout Example...................................................... 38

12 Device and Documentation Support..........................39

12.1 Trademarks.............................................................39

12.2 Electrostatic Discharge Caution..............................39

12.3 Glossary..................................................................39

13 Mechanical, Packaging, and Orderable

Information.................................................................... 40

4 Revision History

Changes from Revision C (March 2013) to Revision D (August 2020) Page

• Added ESD Rating table, Feature Description section, Device Functional Modes, Application and

Implementation section, Power Supply Recommendations section, Layout section, Device and

Documentation Support section, and Mechanical, Packaging, and Orderable Information section .................. 1

• Updated the numbering format for tables, figures and cross-references throughout the document...................1

• Updated Applications section............................................................................................................................. 1

• Deleted text : "LM5067A is available..." .............................................................................................................1

Changes from Revision B (September 2009) to Revision C (March 2013) Page

• Changed layout of National Data Sheet to TI format........................................................................................ 30

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5 Device Comparison

Table 5-1. Device Comparison Table

DEVICE

NUMBER RETRY BEHAVIOR AFTER FAULT PACKAGE

LM5067-1 Latch-off VSSOP (10), SOIC (14)

LM5067-2 Auto-retry VSSOP (10), SOIC (14)

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6 Pin Configuration and Functions

UVLO/EN

OVLO

PWR

VEE TIMER

PGD

OUT

VCC

GATE

SENSE

Figure 6-1. 10-Lead VSSOP Top View

UVLO/EN

OVLO

PWR

VEE

VCC

N/C

OUT

N/C

GATE

SENSE

PGD

TIMER

N/C

Figure 6-2. 14-Lead SOIC Top View

Pin Functions

Name Pin I/O Description

VSSOP-10 SOIC-14

VCC 1 1 I

Positive supply input: Connect to system ground through a resistor. Connect a bypass

capacitor to VEE. The voltage from VCC to VEE is nominally 13 V set by an internal

zener diode.

UVLO/EN 2 3 I

Under-voltage lockout: An external resistor divider from the system input voltage sets

the under-voltage turn-on threshold. The enable threshold at the pin is 2.5 V above

VEE. An internal 22 µA current source provides hysteresis. This pin can be used for

remote enable and disable.

OVLO 3 4 I

Overvoltage lockout: An external resistor divider from the system input voltage sets the

overvoltage turn-off threshold. The disable threshold at the pin is 2.5 V above VEE. An

internal 22 µA current source provides hysteresis.

PWR 4 5 I

Power limit set: An external resistor at this pin, in conjunction with the current sense

resistor (RS), sets the maximum power dissipation in the external series pass

MOSFET.

VEE 5 6 I Negative supply input: Connect to the system negative supply voltage (typically -48V).

TIMER 6 8 I/O Timing capacitor: An external capacitor at this pin sets the insertion time delay and the

fault timeout period. The capacitor also sets the restart timing of the LM5067-2.

SENSE 7 9 I

Current sense input: The voltage across the current sense resistor (RS) is measured

from VEE to this pin. If the voltage across RS reaches 50 mV the load current is limited

and the fault timer activates.

GATE 8 10 O Gate drive output: Connect to the external N-channel MOSFET’s gate.

OUT 9 12 I

Output feedback: Connect to the external MOSFET’s drain. Internally used to

determine the MOSFET VDS voltage for power limiting, and to control the PGD output

pin.

PGD 10 14 0

Power Good indicator: An open drain output capable of sustaining 80 V when off.

When the external MOSFET VDS decreases below 1.23 V the PGD pin switches high.

When the external MOSFET VDS increases above ≊2.5 V the PGD pin switches low.

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MIN MAX UNIT

Input voltage

OUT, PGD to VEE –0.3 100 V

UVLO, OVLO to VEE –0.3 17 V

SENSE to VEE –0.3 0.3 V

Current Into VCC (100 µs pulse) 100 mA

Junction Temperature 150 °C

Storage temperature, Tstg –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

7.2 ESD Ratings

VALUE UNIT

V(ESD) Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins

(LM50672NPA variant)(1) ±1750

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (all

other variants)(1) ±2000

Charged device model (CDM), per JEDEC specification JESD22-C101,

all pins(2) ±500

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNIT

Current into VCC (1) 2 mA

OUT Voltage above VEE 0 80 V

PGD Off Voltage above VEE 0 80 V

Junction Temperature −40 125 °C

(1) Maximum continuous current into VCC is limited by power dissipation and die temperature. See the Thermal Considerations section.

7.4 Thermal Information

THERMAL METRIC(1) (2)

LM5067

UNITVSSOP SOIC

10 PINS 14 PINS

RθJA Junction-to-ambient thermal resistance 94 90 °C/W

RθJC Junction-to-case thermal resistance 44 27

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application

report.

(2) Tested on a 4 layer JEDEC board with 2 vias under the package. See JEDEC standards JESD51-7 and JESD51-3. See the Thermal

Considerations section.

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7.5 Electrical Characteristics

Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ)

range of -40°C to +125°C. Minimum and Maximum limits are specified through test, design, or statistical

correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for

reference purposes only. Unless otherwise stated the following conditions apply: ICC = 2 mA, OUT Pin = 48V

above VEE, all voltages are with respect to VEE. See (1).

PARAMETER TETS CONDITIONS MIN TYP MAX UNIT

Input

VZOperating voltage, VCC – VEE ICC = 2 mA, UVLO = 5V 12.35 13 13.65 V

ICC-EN Internal operating current, enabled VCC-VEE = 11V,

UVLO = 5V 0.8 1mA

ICC-DIS Internal operating current, disabled VCC-VEE = 11V,

UVLO = 2V 480 660 µA

PORIT Threshold voltage to start insertion timer VCC-VEE increasing 7.7 8.2 V

POREN Threshold voltage to enable all functions VCC-VEE increasing 8.4 8.7 V

POREN-HYS POREN hysteresis VCC-VEE decreasing 125 mV

OUT Pin

IOUT-EN OUT bias current, enabled OUT = VEE, Normal operation 0.1 µA

IOUT-DIS OUT bias current, disabled Disabled, OUT = VEE + 48V 50

SENSE Pin

ISNS-EN SENSE bias current, enabled OUT = VEE, Normal operation -6 µA

ISNS-DIS SENSE bias current, disabled Disabled, OUT = VEE + 48V -50

UVLO, OVLO Pins

UVLOTH UVLO threshold 2.45 2.5 2.55 V

UVLOHYS UVLO hysteresis current UVLO = VEE + 2V 10 22 34 µA

UVLOBIAS UVLO bias current UVLO = VEE + 5V 1µA

OVLOTH OVLO threshold 2.43 2.5 2.57 V

OVLOHYS OVLO hysteresis current OVLO = VEE+2.8V -34 -22 -10 µA

OVLOBIAS OVLO bias current OVLO = VEE + 2.4V 1µA

Gate Control (GATE Pin)

IGATE

Source current Normal Operation -72 -52 -32 µA

Sink current

UVLO < 2.5V 1.9 2.2 2.68

SENSE - VEE =150 mV or

VCC - VEE < PORIT, VGATE = 5V 45 110 200

VGATE Gate output voltage in normal operation GATE-VEE voltage VZV

Current Limit

VCL Threshold voltage SENSE - VEE voltage 44 50 56 mV

Circuit Breaker

VCB Threshold voltage SENSE - VEE voltage 70 100 130 mV

Power Limit (PWR Pin)

PWRLIM

Power limit sense voltage (SENSE -

VEE) OUT - SENSE = 24V, RPWR = 75 kΩ 16.5 22 27.5 mV

IPWR PWR pin current VPWR = 2.5V -23 µA

Timer (TIMER Pin)

VTMRH Upper threshold 3.76 44.16 V

VTMRL Lower threshold

Restart cycles (LM5067-2) 1.18 1.25 1.32 V

End of 8th cycle (LM5067-2) 0.3 V

Re-enable threshold (LM5067-1) 0.3 V

ITIMER

Insertion time current TIMER pin = 2V -9.5 -6 -2.5 µA

Sink current, end of insertion time TIMER pin = 2V 1.2 1.55 1.9 mA

Fault detection current TIMER pin = 2V -140 -95 -44 µA

Sink current, end of fault time 0.9 2.5 4.25 µA

DCFAULT Fault Restart Duty Cycle LM5067-2 0.5%

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7.5 Electrical Characteristics (continued)

Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ)

range of -40°C to +125°C. Minimum and Maximum limits are specified through test, design, or statistical

correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for

reference purposes only. Unless otherwise stated the following conditions apply: ICC = 2 mA, OUT Pin = 48V

above VEE, all voltages are with respect to VEE. See (1).

PARAMETER TETS CONDITIONS MIN TYP MAX UNIT

Power Good (PGD Pin)

PGDTH Threshold measured at OUT - SENSE Decreasing 1.162 1.23 1.285 V

Increasing, relative to decreasing threshold 1.143 1.25 1.325

PGDVOL Output low voltage ISINK = 2 mA 60 150 mV

PGDIOH Off leakage current VPGD = 80V 5µA

(1) Current out of a pin is indicated as a negative value.

7.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

UVLO, OVLO Pins

UVLODEL UVLO hysteresis current Delay to GATE high 26 µs

Delay to GATE low 12 µs

OVLODEL OVLO delay Delay to GATE high 26 µs

Delay to GATE low 12 µs

Current Limit

tCL Response time SENSE - VEE stepped from 0 mV to

80 mV 25 µs

Circuit Breaker

tCB Response time SENSE - VEE stepped from 0 mV to

150 mV, time to GATE low, no load 0.65 1.0 µs

Timer (TIMER Pin)

tFAULT Fault to GATE low delay TIMER pin reaches 4.0V 15 µs

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7.7 Typical Characteristics

Unless otherwise specified the following conditions apply: TJ = 25°C.

Figure 7-1. ICC vs Operating Voltage - Disabled Figure 7-2. ICC vs Operating Voltage - Enabled

Figure 7-3. Operating Voltage vs ICC Figure 7-4. SENSE Pin Current vs System Voltage

Figure 7-5. OUT Pin Current vs System Voltage Figure 7-6. GATE Source Current vs Operating

Voltage

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Figure 7-7. GATE Pull-Down Current, Circuit

Breaker vs GATE Voltage

Figure 7-8. PGD Low Voltage vs Sink Current

Figure 7-9. MOSFET Power Dissipation Limit vs

RPWR and RS

Figure 7-10. UVLO and OVLO Hysteresis Current

vs Temperature

Figure 7-11. UVLO, OVLO Threshold Voltage vs

UVLO, OVLO Threshold Voltage

Figure 7-12. VZ Operating Voltage vs Temperature

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Figure 7-13. Current Limit Threshold vs

Temperature

Figure 7-14. Circuit Breaker Threshold vs

Temperature

-40

SENSE Pin ± VEE Pin

POWER LIMIT THRESHOLD (mV)

-20 0 20 40 60 80 100 120

RPWR = 75k, VEE = -24V

JUNCTION TEMPERATURE ( C)

Figure 7-15. Power Limit Threshold vs

Temperature Figure 7-16. Gate Source Current vs Temperature

Figure 7-17. GATE Pull-Down Current, Circuit

Breaker vs Temperature

Figure 7-18. PGD Pin Low Voltage vs Temperature

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Figure 7-19. POREN Threshold vs Temperature

Upper Restart Threshold

Lower Restart Threshold

Lower Reset Threshold

-40

JUNCTION TEMPERATURE (°C)

-20 0 20 40 60 80 100 125

TIMER PIN THRESHOLDS (V)

1.4

1.2

0.4

0.2

3.9

4.1

Figure 7-20. TIMER Pin Thresholds vs Temperature

Figure 7-21. TIMER Pin Fault Detection Current vs Temperature

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8 Detailed Description

8.1 Overview

The LM5067 is designed to control the in-rush current to the load upon insertion of a circuit card into a live

backplane or other “hot” power source, thereby limiting the voltage sag on the backplane’s supply voltage, and

the dV/dt of the voltage applied to the load. Effects on other circuits in the system are minimized, preventing

possible unintended resets. During the system power up, the maximum power dissipation in the series pass

device is limited to a safe value within the device’s Safe Operating Area (SOA). After the system power up is

complete, the LM5067 monitors the load for excessive currents due to a fault or short circuit at the load. Limiting

the load current and/or the power in the external MOSFET for an extended period of time results in the shutdown

of the series pass MOSFET. After a fault event, the LM5067-1 latches off until the circuit is re-enabled by

external control, while the LM5067-2 automatically restarts with defined timing. The circuit breaker function

quickly switches off the series pass device upon detection of a severe over-current condition caused by, e.g. a

short circuit at the load. The Power Good (PGD) output pin indicates when the output voltage is close to the

normal operating value. Programmable undervoltage lock-out (UVLO) and overvoltage lock-out (OVLO) circuits

shut down the LM5067 when the system input voltage is outside the desired operating range. The typical

configuration of a circuit card with LM5067 hot swap protection is shown in Figure 8-1.

Load

VCC

GND

BACKPLANE

PGD

OUT

LIVE

GATESENSEVEE

VSYS

RIN

LM 5067

- 48V

PLUG-IN BOARD

CIN

Figure 8-1. LM5067 Application

The LM5067 can be used in a variety of applications, other than plug-in boards, to monitor for excessive load

current, provide transient protection, and ensuring the voltage to the load is within preferred limits. The circuit

breaker function protects the system from a sudden short circuit at the load. Use of the UVLO/EN pin allows the

LM5067 to be used as a solid state relay. The PGD output provides a status indication of the voltage at the load

relative to the input system voltage.

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8.2 Functional Block Diagram

GATE

Fault

Timer

1.25V

TIMER

1.23V/

2.5V

Current Limit

Threshold

8.4/8.3V Enable POR

TIMER AND GATE

LOGIC CONTROL

Power Limit

Threshold

Gate

Control

1.55 mA

End

Insertion

Time

0.3V

7.7V

Vcc

Insertion Timer POR

110

VEE

SENSE

OUT

PWR

OVLO

UVLO/EN

Insertion

Timer

Fault

Discharge

PGD

Vcc

50 mV

2.2 mA

4.0V

2.5V

23 PA

22 PA

2.5 PA

85 PA

6 PA

52 PA

VDS

1 M:

13V

Vcc

Vee

VCC

Vee

Current Limit

Power Limit

Control

Vcc

LM5067

All voltages are with respect to VEE

8.3 Feature Description

8.3.1 Power Up Sequence

The system voltage range of the LM5067 is –9 V to –80 V, with a transient capability to -100 V. Referring to the

Functional Block Diagram, Figure 9-1, and Figure 8-2, as the system voltage (VSYS) initially increases from zero,

the external N-channel MOSFET (Q1) is held off by an internal 110 mA pull-down current at the GATE pin. The

strong pull-down current at the GATE pin prevents an inadvertent turn-on as the MOSFET’s gate-to-drain (Miller)

capacitance is charged. When the operating voltage of the LM5067 (VCC – VEE) reaches the PORIT threshold

(7.7V) the insertion timer starts. During the insertion time, the capacitor at the TIMER pin (CT) is charged by a 6

µA current source, and Q1 is held off by a 2.2 mA pull-down current at the GATE pin regardless of the system

voltage. The insertion time delay allows ringing and transients at VSYS to settle before Q1 can be enabled. The

insertion time ends when the TIMER pin voltage reaches 4 V above VEE, and CT is then quickly discharged by

an internal 1.5 mA pull-down current. After the insertion time, the LM5067 control circuitry is enabled when the

operating voltage reaches the POREN threshold (8.4 V). As VSYS continues to increase, the LM5067 operating

voltage is limited at ≊13 V by an internal zener diode. The remainder of the system voltage is dropped across the

input resistor RIN.

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The GATE pin switches on Q1 when VSYS exceeds the UVLO threshold (UVLO pin >2.5V above VEE). If VSYS

exceeds the UVLO threshold at the end of the insertion time, Q1 is switched on at that time. The GATE pin

sources 52 µA to charge Q1’s gate capacitance. The maximum gate-to-source voltage of Q1 is limited by the

LM5067’s operating voltage (VZ) to approximately 13 V. During power up, as the voltage at the OUT pin

increases in magnitude with respect to Ground, the LM5067 monitors Q1’s drain current and power dissipation.

In-rush current limiting and/or power limiting circuits actively control the current delivered to the load. During the

in-rush limiting interval (t2 in Figure 8-2) an internal current source charges CT at the TIMER pin. When the load

current reduces from the limiting value to a value determined by the load the in-rush limiting interval is complete

and CT is discharged. The PGD pin switches high when the voltage at the OUT pin reaches to within 1.25 V of

the voltage at the SENSE pin.

If the TIMER pin voltage reaches 4.0V before in-rush current limiting or power limiting ceases (during t2), a fault

is declared and Q1 is turned off. See Fault Timer and Restart for a complete description of the fault mode.

TIMER Pin

Load

Current

PGD

UVLO

Limiting Normal Operation

GATE Pin

Insertion Time

Operating

Voltage

Output

Voltage

VEE

All waveforms and voltages are with respect to VEE

except System Input Voltage and Output Voltage.

2.5 PA

85 PA

52 PA source

2.2 mA pull-down

6 PA

1.25V

ILIMIT

VSYS

pull-down

110 mA

VSYS

PORIT

System

Input

Voltage

(VCC

VEE)

LM5067

(OUT Pin)

In-rush

Figure 8-2. Power Up Sequence (Current Limit only)

8.3.2 Gate Control

The external N-channel MOSFET is turned on when the GATE pin sources 52 µA to enhance the gate. During

normal operation (t3 in Figure 8-2) Q1’s gate is held charged to approximately 13V above VEE, typically within

20 mV of the voltage at VCC. If the maximum VGS rating of Q1 is less than 13V, a lower voltage external zener

diode must be added between the GATE and SENSE pins. The external zener diode must have a forward

current rating of at least 110 mA.

When the system voltage is initially applied (before the operating voltage reaches the PORIT threshold), the

GATE pin is held low by a 110 mA pull-down current. The pull-down current helps prevent an inadvertent turn-on

of the MOSFET through its drain-gate capacitance as the applied system voltage increases.

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During the insertion time (t1 in Figure 8-2) the GATE pin is held low by a 2.2 mA pull-down current. This

maintains Q1 in the off-state until the end of t1, regardless of the voltage at VCC and UVLO.

Following the insertion time, during t2 in Figure 8-2, the gate voltage of Q1 is modulated to keep the current or

Q1’s power dissipation level from exceeding the programmed levels. Current limiting and power limiting are

considered fault conditions, during which the voltage on the TIMER pin capacitor increases. If the current and

power limiting cease before the TIMER pin reaches 4 V the TIMER pin capacitor is discharged, and the circuit

enters normal operation. See Fault Timer and Restart for details on the fault timer.

If the system input voltage falls below the UVLO threshold, or rises above the OVLO threshold, the GATE pin is

pulled low by the 2.2 mA pull-down current to switch off Q1.

52 PA

GATE

VCC

SENSE

Insertion time

2.2 mA Fault

Current Limit

Control

Gate

Control

VEE OUT

VEE

System Gnd

Gate

Charge

VSYS

Power Limit

110 mA

Initial Hold-down

UVLO/OVLO

CIN

RIN

Circuit Breaker/

Figure 8-3. Gate Control

8.3.3 Current Limit

The current limit threshold is reached when the voltage across the sense resistor RS (SENSE to VEE) reaches

50 mV. In the current limiting condition, the GATE voltage is controlled to limit the current in MOSFET Q1. While

the current limit circuit is active, the fault timer is active as described in the Section 8.3.6 section. If the load

current reduces below the current limit threshold before the end of the Fault Timeout Period, the LM5067

resumes normal operation. For proper operation, the RS resistor value should be no larger than 100 mΩ.

8.3.4 Circuit Breaker

If the load current increases rapidly (e.g., the load is short-circuited) the current in the sense resistor (RS) may

exceed the current limit threshold before the current limit control loop is able to respond. If the current exceeds

approximately twice the current limit threshold (100 mV/RS), Q1’s gate is quickly pulled down by the 110 mA pull-

down current at the GATE pin, and a Fault Timeout Period begins. When the voltage across RS falls below 100

mV the 110 mA pull-down current at the GATE pin is switched off, and the gate voltage of Q1 is then determined

by the current limit or the power limit functions. If the TIMER pin reaches 4.0V before the current limiting or

power limiting condition ceases, Q1 is switched off by the 2.2 mA pull-down current at the GATE pin as

described in the Fault Timer & Restart section.

8.3.5 Power Limit

An important feature of the LM5067 is the MOSFET power limiting. The Power Limit function can be used to

maintain the maximum power dissipation of MOSFET Q1 within the device SOA rating. The LM5067 determines

the power dissipation in Q1 by monitoring its drain-source voltage (OUT to SENSE), and the drain current

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through the sense resistor (SENSE to VEE). The product of the current and voltage is compared to the power

limit threshold programmed by the resistor at the PWR pin. If the power dissipation reaches the limiting

threshold, the GATE voltage is modulated to reduce the current in Q1, and the fault timer is active as described

in the Fault Timer and Restart section.

8.3.6 Fault Timer and Restart

When the current limit or power limit threshold is reached during turn-on or as a result of a fault condition, the

gate-to-source voltage of Q1 is modulated to regulate the load current and power dissipation in Q1. When either

limiting function is active, an 85 µA fault timer current source charges the external capacitor (CT) at the TIMER

pin as shown in Figure 8-5 (Fault Timeout Period). If the fault condition subsides before the TIMER pin reaches

4.0V, the LM5067 returns to the normal operating mode and CT is discharged by the 2.5 µA current sink. If the

TIMER pin reaches 4.0V during the Fault Timeout Period, Q1 is switched off by a 2.2 mA pull-down current at

the GATE pin. The subsequent restart procedure depends on which version of the LM5067 is in use.

The LM5067-1 latches the GATE pin low at the end of the Fault Timeout Period, and CT is discharged by the 2.5

µA fault current sink. The GATE pin is held low until a power up sequence is externally initiated by cycling the

input voltage (VSYS), or momentarily pulling the UVLO/EN pin within 2.5V of VEE with an open-collector or open-

drain device as shown in Figure 8-4. The voltage across CT must be <0.3V for the restart procedure to be

effective.

Restart

Control

VCC

OVLO

VEE

System Gnd VEE

SENSE

VSYS

CIN

RIN

UVLO/EN

LM5067-1

Figure 8-4. Latched Fault Restart Control

The LM5067-2 provides an automatic restart sequence which consists of the TIMER pin cycling between 4 V

and 1.25 V seven times after the Fault Timeout Period, as shown in Figure 8-5. The period of each cycle is

determined by the 85 µA charging current, and the 2.5 µA discharge current, and the value of the capacitor CT.

When the TIMER pin reaches 0.3 V during the eighth high-to-low ramp, the 52 µA current source at the GATE

pin turns on Q1. If the fault condition is still present, the Fault Timeout Period and the restart cycle repeat.

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ILIMIT

Load

Current

GATE

TIMER

Pin 1 2 3 7 8

2.2 mA

pulldown

Fault Timeout

Period

0.3V

Fault

Detection

tRESTART

1.25V

85 PA

52 PA

Gate Charge

All voltages are with respect to VEE

2.5 PA

Figure 8-5. Restart Sequence (LM5067-2)

8.3.7 Undervoltage Lock-Out (UVLO)

The series pass MOSFET (Q1) is enabled when the input supply voltage (VSYS) is within the operating range

defined by the programmable undervoltage lockout (UVLO) and overvoltage lock-out (OVLO) levels. Typically

the UVLO level at VSYS is set with a resistor divider (R1-R3) as shown in Figure 9-1. When VSYS is less than the

UVLO level, the internal 22 µA current sink at UVLO/EN is enabled, the current source at OVLO is off, and Q1 is

held off by the 2.2 mA pull-down current at the GATE pin. VSYS reaches its UVLO level when the voltage at the

UVLO/EN pin reaches 2.5V above VEE. Upon reaching the UVLO level, the 22 µA current sink at the UVLO/EN

pin is switched off, increasing the voltage at the pin, providing hysteresis for this threshold. With the UVLO/EN

pin above 2.5V, Q1 is switched on by the 52 µA current source at the GATE pin.

See Application Information for a procedure to calculate the values of the threshold setting resistors (R1-R3).

The minimum possible UVLO level can be set by connecting the UVLO/EN pin to VCC. In this case Q1 is

enabled when the operating voltage (VCC – VEE) reaches the POREN threshold (8.4V).

8.3.8 Overvoltage Lock-Out (OVLO)

The series pass MOSFET (Q1) is enabled when the input supply voltage (VSYS) is within the operating range

defined by the programmable undervoltage lockout (UVLO) and overvoltage lock-out (OVLO) levels. Typically

the OVLO level at VSYS is set with a resistor divider (R1-R3) as shown in Figure 9-1. If VSYS raises the OVLO pin

voltage more than 2.5 V above VEE Q1 is switched off by the 2.2 mA pull-down current at the GATE pin, denying

power to the load. When the OVLO pin is above 2.5 V, the internal 22 µA current source at OVLO is switched on,

raising the voltage at OVLO and providing threshold hysteresis. When the voltage at the OVLO pin is reduced

below 2.5 V the 22 µA current source is switched off, and Q1 is enabled. See Figure 9-1 for a procedure to

calculate the threshold setting resistor values.

8.3.9 Power Good Pin

The Power Good output indicator pin (PGD) is connected to the drain of an internal N-channel MOSFET. An

external pull-up resistor is required at PGD to an appropriate voltage to indicate the status to downstream

circuitry. The off-state voltage at the PGD pin must be more positive than VEE, and can be up to 80V above VEE

with transient capability to 100 V. PGD is switched high at the end of the turn-on sequence when the voltage

from OUT to SENSE (the external MOSFET’s VDS) decreases below 1.23 V. PGD switches low if the MOSFET’s

VDS increases past 2.5 V, if the system input voltage goes below the UVLO threshold or above the OVLO

threshold, or if a fault is detected. The PGD output is high when the operating voltage (VCC-VEE) is less than 2

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8.4 Device Functional Modes

8.4.1 Shutdown / Enable Control

Figure 8-6 shows how to use the UVLO/EN pin for remote shutdown and enable control. Taking the UVLO/EN

pin below its 2.5V threshold (with respect to VEE) shuts off the load current. Upon releasing the UVLO/EN pin

the LM5067 switches on the load current with in-rush current and power limiting. In Figure 8-7 the OVLO pin is

used for remote shutdown and enable control. When the external transistor is off, the OVLO pin is above its 2.5

V threshold (with respect to VEE) and the load current is shut off. Turning on the external transistor allows the

LM5067 to switch on the load current with in-rush current and power limiting.

Shutdown

Control

VCC

OVLO

VEE

System Gnd VEE

SENSE

VSYS

CIN

RIN

UVLO/EN

LM5067

Figure 8-6. Shutdown/Enable Using the UVLO/EN

Shutdown

Control

VCC

OVLO

VEE

System Gnd VEE

SENSE

VSYS

CIN

RIN

100k

UVLO/EN

LM5067

Figure 8-7. Shutdown/Enable Using the OVLO Pin

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9 Application and Implementation

Note

Information in the following applications sections is not part of the TI component specification, and TI

does not warrant its accuracy or completeness. TI’s customers are responsible for determining

suitability of components for their purposes. Customers should validate and test their design

implementation to confirm system functionality.

9.1 Application Information

The LM5067 is a hotswap controller which is used to manage inrush current and protect in case of faults.

When designing a hotswap, three key scenarios should be considered:

• Start-up

• Output of a hotswap is shorted to ground when the hotswap is on. This is often referred to as a hot-short.

• Powering-up a board when the output and ground are shorted. This is usually called a start-into-short.

All of these scenarios place a lot of stress on the hotswap MOSFET and need special care when designing the

hotswap circuit to keep the MOSFET within its SOA. A detailed design example is provided in the following

sections and similar procedure can be followed for a custom design with different system target specifications.

Alternatively, a spreadsheet design tool LM5067 Design Calculator is available for simplified calculations..

9.2 Typical Application

GND

LOAD

VCC

VEE SENSETIMER GATE

OVLO

PGD

LM5067

PWR

OUT

RPG

RIN

CIN

RPWR

VSYS

(- 48V)

UVLO / EN

Figure 9-1. Basic Application Circuit

9.2.1 Design Requirements

The recommended design-in procedure for the LM5067 is as follows:

• Determine the minimum and maximum system voltages (VEE). Select the input resistor (RIN) to provide at

least 2 mA into the VCC pin at the minimum system voltage. The resistor’s power rating must be suitable for

its power dissipation at maximum system voltage ((VSYS – 13V)2/RIN).

• Determine the current limit threshold (ILIM). This threshold must be higher than the normal maximum load

current, allowing for tolerances in the current sense resistor value and the LM5067 Current Limit threshold

voltage. Use equation 1 to determine the value for RS.

• Determine the maximum allowable power dissipation for the series pass FET (Q1), using the device’s SOA

information. Use equation 2 to determine the value for RPWR.

• Determine the value for the timing capacitor at the TIMER pin (CT) using Equation 3. The fault timeout

period (tFAULT) must be longer than the circuit’s turn-on-time. The turn-on time can be estimated using

the equations in the Turn-on Time section of this data sheet, but should be verified experimentally. Allow for

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tolerances in the values of the external capacitors, sense resistor, and the LM5067 Electrical Characteristics

for the TIMER pin, current limit and power limt. Review the resulting insertion time, and the restart timing if

the LM5067-2 is used.

• Choose option A, B, C, or D from the UVLO, OVLO section of the Application Information for setting the

UVLO and OVLO thresholds and hysteresis. Use the procedure in the appropriate option to determine the

resistor values at the UVLO and OVLO pins.

• Choose the appropriate voltage, and pull-up resistor, for the Power Good output.

9.2.2 Detailed Design Procedure

9.2.2.1 RIN, CIN

The LM5067 operating voltage is determined by an internal 13 V shunt regulator which receives its current from

the system voltage via RIN. When the system voltage exceeds 13V, the LM5067 operating voltage (VCC – VEE)

is between VEE and VEE + 13 V. The remainder of the system voltage is dropped across the input resistor RIN,

which must be selected to pass at least 2 mA into the LM5067 at the minimum system voltage. The resistor’s

power rating must be selected based on the power dissipation at maximum system voltage, calculated from:

PRIN = (VSYS(max) – 13 V)2/RIN (1)

9.2.2.2 Current Limit, RS

The LM5067 monitors the current in the external MOSFET (Q1) by measuring the voltage across the sense

resistor (RS), connected from SENSE to VEE. The required resistor value is calculated from:

LIM

50 mV

R =

(2)

where

• ILIM is the desired current limit threshold

When the voltage across RS reaches 50 mV, the current limit circuit modulates the gate of Q1 to regulate the

current at ILIM. While the current limiting circuit is active, the fault timer is active as described in the Fault Timer

and Restart section. For proper operation, RS must be no larger than 100 mΩ.

While the maximum load current in normal operation can be used to determine the required power rating for

resistor RS, basing it on the current limit value provides a more reliable design since the circuit can operate near

the current limit threshold continuously. The resistor’s surge capability must also be considered since the circuit

breaker threshold is approximately twice the current limit threshold. Connections from RS to the LM5067 should

be made using Kelvin techniques. In the suggested layout of Figure 9-2 the small pads at the upper corners of

the sense resistor connect only to the sense resistor terminals, and not to the traces carrying the high current.

With this technique, only the voltage across the sense resistor is applied to VEE and SENSE, eliminating the

voltage drop across the high current solder connections.

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72026)(7¶6

SOURCE

HIGH CURRENT PATH

VEE

SENSE

RESISTOR

FROM

SYSTEM

INPUT

VOLTAGE

LM5067

Figure 9-2. Sense Resistor Connections

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9.2.2.3 Power Limit Threshold

The LM5067 determines the power dissipation in the external MOSFET (Q1) by monitoring the drain current (the

current in RS), and the VDS of Q1 (OUT to SENSE pins). The resistor at the PWR pin (RPWR) sets the maximum

power dissipation for Q1, and is calculated from the following equation:

RPWR = 1.42 x 105 x RS x PFET(LIM) (3)

where

• PFET(LIM) is the desired power limit threshold for Q1

• RS is the current sense resistor described in the Current Limit section

For example, if RS is 10 mΩ, and the desired power limit threshold is 60W, RPWR calculates to 85.2 kΩ. If the Q1

power dissipation reaches the power limit threshold, the Q1 gate is modulated to control the load current,

keeping Q1 power from exceeding the threshold. For proper operation of the power limiting feature, RPWR must

be ≤150 kΩ. While the power limiting circuit is active, the fault timer is active as described in the Fault Timer and

Restart section. Typically, power limit is reached during startup, or when the VDS of Q1 increases due to a severe

overload or short circuit.

The programmed maximum power dissipation should have a reasonable margin relative to the maximum power

defined by the SOA chart if the LM5067-2 is used since the FET will be repeatedly stressed during fault restart

cycles. The FET manufacturer should be consulted for guidelines. The PWR pin can be left open if the

application does not require use of the power limit function.

9.2.2.4 Turn-On Time

The output turn-on time depends on whether the LM5067 operates in current limit only, or in both power limit and

current limit, during turn-on.

9.2.2.4.1 Turn-on With Current Limit Only

If the current limit threshold is less than the current defined by the power limit threshold at maximum VDS the

circuit operates only at the current limit threshold during turn-on. Referring to Figure 9-5a, as the drain current

reaches ILIM, the gate-to-source voltage is controlled at VGSL to maintain the current at ILIM. As the output voltage

reaches its final value (VDS ≊ 0 V) the drain current reduces to the value defined by the load, and the gate is

charged to approximately 13 V (VGATE). The time for the OUT pin voltage to transition from zero volts to VSYS is

equal to:

SYS L

LIM

V x C

t =

(4)

where

• CL is the load capacitance

For example, if VSYS = –48 V, CL = 1000 µF, and ILIM = 1 A, tON calculates to 48 ms. The maximum

instantaneous power dissipated in the MOSFET is 48W. This calculation assumes the time from t1 to t2 in Figure

9-5a is small compared to tON, and the load does not draw any current until after the output voltage has reached

its final value, and PGD switches high (Figure 9-3).

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VCC

PGD

OUT

GND

GATESENSEVEE

VEE

LM5067

CIN

RIN

VSYS

Figure 9-3. No Load Current During Turn-on

If the load draws current during the turn-on sequence (Figure 9-4), the turn-on time is longer than the above

calculation, and is approximately equal to:

 

ª º

« »

¬ ¼

LIM L SYS

ON L L LIM L

I x R - V

t = - (R x C ) x I x R

(5)

where

• RL is the load resistance and VSYS is the absolute value of the system input voltage

Note

The Fault Timeout Period must be set longer than tON to prevent a fault shutdown before the turn-on

sequence is complete.

VCC

OUT

GND

GATESENSEVEE

VEE

LM5067

CIN

RIN

VSYS

Figure 9-4. Load Draws Current During Turn-On

9.2.2.4.2 Turn-on With Power Limit and Current Limit

The power dissipation limit in Q1 (PFET(LIM)) is defined by the resistor at the PWR pin, and the current sense

resistor RS. See Power Limit Threshold. If the current limit threshold (ILIM) is higher than the current defined by

the power limit threshold at maximum VDS (PFET(LIM)/VSYS) the circuit operates initially in power limit mode when

the VDS of Q1 is high, and then transitions to current limit mode as the current increases to ILIM as VDS

decreases. See Figure 9-5b. Assuming the load (RL) is not connected during turn-on, the time for the output

voltage to reach its final value is approximately equal to:

2L FET(LIM)

L SYS

ON FET(LIM) LIM

C x P

C x V

t = +

2 x P 2 x I 2

(6)

For example, if VSYS = –48 V, CL = 1000 µF, ILIM = 1 A, and PFET(LIM) = 20 W, tON calculates to ≊ 68 ms, and the

initial current level (IP) is approximately 0.42A.

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Note

The Fault Timeout Period must be set longer than tON

Drain Current

0t2 t3

a) Current Limit Only

VSYS VDS

ILIM

VGATE

VGSL

VTH tON

Source Voltage-toGate-

b) Power Limit and Current Limit

VDS

Drain Current

tON

VSYS

ILIM

VGATE

VGSL

VTH

Source Voltage-toGate-

Figure 9-5. MOSFET Power Up Waveforms

9.2.2.5 MOSFET Selection

It is recommended that the external MOSFET (Q1) selection be based on the following criteria:

• The BVDSS rating should be greater than the maximum system voltage (VSYS), plus ringing and transients

which can occur at VSYS when the circuit card, or adjacent cards, are inserted or removed.

• The maximum continuous current rating should be based on the current limit threshold (50 mV/RS), not the

maximum load current, since the circuit can operate near the current limit threshold continuously.

• The Pulsed Drain Current spec (IDM) must be greater than the current threshold for the circuit breaker

function (100 mV/RS).

• The SOA (Safe Operating Area) chart of the device, and the thermal properties, should be used to determine

the maximum power dissipation threshold set by the RPWR resistor. The programmed maximum power

dissipation should have a reasonable margin from the maximum power defined by the FET's SOA chart if the

LM5067-2 is used since the FET will be repeatedly stressed during fault restart cycles. The FET

manufacturer should be consulted for guidelines.

• RDS(on) should be sufficiently low that the power dissipation at maximum load current (IL(max) 2 x RDS(on)) does

not raise its junction temperature above the manufacturer’s recommendation.

If the device chosen for Q1 has a maximum VGS rating less than 13V, an external zener diode must be added

from its gate to source, with the zener voltage less than the maximum VGS rating. The zener diode’s forward

current rating must be at least 110 mA to conduct the GATE pull-down current during startup and in the circuit

breaker mode.

9.2.2.6 Timer Capacitor, CT

The TIMER pin capacitor (CT) sets the timing for the insertion time delay, fault timeout period, and restart timing

of the LM5067-2.

9.2.2.6.1 Insertion Delay

- Upon applying the system voltage (VSYS) to the circuit, the external MOSFET (Q1) is held off during the

insertion time (t1 in Figure 8-2) to allow ringing and transients at VSYS to settle. Since each backplane’s

response to a circuit card plug-in is unique, the worst case settling time must be determined for each application.

The insertion time starts when the operating voltage (VCC-VEE) reaches the PORIT threshold, at which time the

internal 6 µA current source charges CT from 0 V to 4 V. The required capacitor value is calculated from:

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6

t1 x 6 A

C = = t1 x 1.5 x 10

4 V

(7)

where

• t1 is the desired insertion delay

For example, if the desired insertion delay is 250 ms, CT calculates to 0.38 µF. At the end of the insertion delay,

CT is quickly discharged by a 1.5 mA current sink.

9.2.2.6.2 Fault Timeout Period

- During turn-on of the output voltage, or upon detection of a fault condition where the current limit and/or power

limit circuits regulate the current through Q1, CT is charged by the fault timer current source (85 µA). The Fault

Timeout Period is the time required for the TIMER pin voltage to reach 4.0V above VEE, at which time Q1 is

switched off. The required capacitor value for the desired Fault Timeout Period tFAULT is calculated from:

5

FAULT

T FAULT

t x 85 A

C = = t x 2.13 x 10

4 V

(8)

For example, if the desired Fault Timeout Period is 16 ms, CT calculates to 0.34 µF. After a fault timeout, if the

LM5067-1 is in use, CT must be allowed to discharge to < 0.3 V by the 2.5 µA current sink, after which a power

up sequence can be initiated by external circuitry. See Fault Timer and Restart and Latched Fault Restart

Control. If the LM5067-2 is in use, after the Fault Timeout Period expires a restart sequence begins as described

below (Restart Timing).

Since the LM5067 normally operates in power limit and/or current limit during a power up sequence, the Fault

Timeout Period MUST be longer than the time required for the output voltage to reach its final value. See Turn-

On Time.

9.2.2.6.3 Restart Timing

If the LM5067-2 is in use, after the Fault Timeout Period described above, CT is discharged by the 2.5 µA current

sink to 1.25 V. The TIMER pin then cycles through seven additional charge/discharge cycles between 1.25 V

and 4 V as shown in Figure 8-5. The restart time ends when the TIMER pin voltage reaches 0.3 V during the

final high-to-low ramp. The restart time, after the Fault Timeout Period, is equal to:

ª º

« »

P P P

¬ ¼

RESTART T T

7 x 2.75 V 7 x 2.75 V 3.7 V

t = C x + + = C x 9.4 x 10

2.5 A 85 A 2.5 A

(9)

For example, if CT = 0.33 µF, tRESTART = 3.1 seconds. At the end of the restart time, Q1 is switched on. If the

fault is still present, the fault timeout and restart sequence repeats. The on-time duty cycle of Q1 is

approximately 0.5% in this mode.

9.2.2.7 UVLO, OVLO

By programming the UVLO and OVLO thresholds the LM5067 enables the series pass device (Q1) when the

input supply voltage (VSYS) is within the desired operational range. If VSYS is below the UVLO threshold, or

above the OVLO threshold, Q1 is switched off, denying power to the load. Hysteresis is provided for each

threshold.

Note

All voltages are with respect to Vee in the discussions below. Use absolute values in the equations.

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9.2.2.7.1 Option A:

The configuration shown in Figure 9-6 requires three resistors (R1-R3) to set the thresholds.

OVLO

VEE

TIMER AND GATE

LOGIC CONTROL

GND

VEE

To Load

Vee

LM5067

22 PA

CIN

RIN

VSYS

UVLO/EN

22 PA

Vee

2.50V

VCC

Figure 9-6. UVLO and OVLO Thresholds Set By R1-R3

The procedure to calculate the resistor values is as follows:

• Determine the upper UVLO threshold (VUVH) to enable Q1, and the lower UVLO threshold (VUVL) to disable

Q1.

• Determine the upper OVLO threshold (VOVH) to disable Q1.

• The lower OVLO threshold (VOVL), to enable Q1, cannot be chosen in advance in this case, but is determined

after the values for R1-R3 are determined. If VOVL must be accurately defined in addition to the other three

thresholds, see Option B below.

The resistors are calculated as follows:

P P

UV(HYS)

UVH UVL

UVL

OVH UVL

UVL

V - V

R1 = =

22 A 22 A

2.5 V x R1 x V

R3 = V x ( V - 2.5 V)

2.5 V x R1

R2 = - R3

V - 2.5 V)

(10)

The lower OVLO threshold is calculated from:

ª º

§ ·

¨ ¸

« »

¬ ¼

OVL

2.5 V

V = + (R1 + R2 x - 22 A + 2.5 V

(11)

As an example, assume the application requires the following thresholds: VUVH = -36V, VUVL = -32V, VOVH =

-60V.

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P P

:: :

36 V - 32 V 4 V

R1 = = = 182 k

22 A 22 A

2.5 V x 182 k x 32 V

R3 = = 8.23 k

60 V x (32 V - 2.5 V)

2.5 V x 182 k

R2 = = -8.23 k = 7.19 k

(32 V - 2.5 V)

(12)

The lower OVLO threshold calculates to -55.8V, and the OVLO hysteresis is 4.2V. Note that the OVLO

hysteresis is always slightly greater than the UVLO hysteresis in this configuration.

When the R1-R3 resistor values are known, the threshold voltages and hysteresis are calculated from the

following:

ª º

§ ·

¨ ¸

« »

¬ ¼

ª º

§ ·

¨ ¸

« »

¬ ¼

UVH

UVL

UV(HYS)

OVH

OVL

OV(

2.5 V

V = 2.5 V + R1 x 22 A +

R2 + R3

2.5 V x (R1 + R2 + R3)

V = R2 + R3

V = R1 x 22 A

2.5 V x (R1 + R2 + R3)

V = R3

2.5 V

V = (R1 + R2) x - 22 A + 2.5 V

HYS) = (R14 + R2) x 22 A

(13)

Note

Ensure the voltages at the UVLO and OVLO pins do not exceed the Absolute Maximum ratings for

those pins when the system voltage is at maximum.

9.2.2.7.2 Option B:

If all four thresholds must be accurately defined, the configuration in Figure 9-7 can be used.

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VCC

OVLO

VEE

TIMER AND GATE

LOGIC CONTROL

GND

VEE

To Load

Vee

LM5067

22 PA

CIN

RIN

VSYS

UVLO/EN

2.50V

22 PA

Figure 9-7. Programming the Four Thresholds

The four resistor values are calculated as follows:

• Determine the upper UVLO threshold (VUVH) to enable Q1, and the lower UVLO threshold (VUVL) to disable

Q1.

UV(HYS)

UVH UVL

UVL

V - V

R1 = =

22 $ $

2.5 V x R1

R2 = (V - 2.5 V)

(14)

• Determine the upper OVLO threshold (VOVH) to disable Q1, and the lower OVLO threshold (VOVL) to enable

Q1.

OV(HYS)

OVH OVL

OVL

V - V

R3 = =

22 $ $

2.5 V x R3

R4 = (V - 2.5 V)

(15)

As an example, assume the application requires the following thresholds: VUVH = –22 V, VUVL = –17 V, VOVH = –

60 V, and VOVL = –58 V. Therefore VUV(HYS) = 5 V, and VOV(HYS) = 2 V. The resistor values are:

R1 = 227 kΩ, R2 = 39.1 kΩ

R3 = 90.9 kΩ, R4 = 3.95 kΩ

Where the R1-R4 resistor values are known, the threshold voltages and hysteresis are calculated from the

following:

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ª º

§ ·

¨ ¸

« »

¬ ¼

ª º

§ ·

¨ ¸

« »

¬ ¼

UVH

UVL

UV(HYS)

OVH

OVL

OV(HYS)

2.5 V

V = 2.5 V + R1 x + 22 A

2.5 V x (R1 + R2)

V = R2

V = R1 x 22 A

2.5 V x (R3 + R4)

V = R4

2.5 V

V = 2.5 V + R3 x - 22 A

V = R3 x 22 A

(16)

Note

Ensure the voltages at the UVLO and OVLO pins do not exceed the Absolute Maximum ratings for

those pins when the system voltage is at maximum.

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9.2.2.7.3 Option C:

The minimum UVLO level is obtained by connecting the UVLO pin to VCC as shown in Figure 9-8. Q1 is

switched on when the operating voltage reaches the POREN threshold (≊8.4V). The OVLO thresholds are set by

R3 and R4 using the procedure in Option B.

Note

Ensure the voltage at the OVLO pin does not exceed the Absolute Maximum ratings for that pin when

the system voltage is at maximum.

50k

OVLO

VEE

TIMER AND GATE

LOGIC CONTROL

GND

VEE

To Load

Vee

LM5067

22 PA

CIN

RIN

VSYS

UVLO/EN 2.5V

2.5V

22 PA

VCC

Figure 9-8. UVLO = POREN

9.2.2.7.4 Option D:

The OVLO function can be disabled by connecting the OVLO pin to VEE. The UVLO thresholds are set as

described in Option B or Option C.

9.2.2.8 Thermal Considerations

The LM5067 should be operated so that its junction temperature does not exceed 125°C. The junction

temperature is equal to:

TJ = TA + (RθJA x PD)(17)

where

• TA is the ambient temperature

• RθJA is the thermal resistance of the LM5067

PD is the power dissipated within the LM5067, calculated from:

PD = 13V x ICC (18)

where

• ICC is the current into the VCC pin (the current through the RIN resistor).

Values for RθJA and RθJC are in Thermal Information.

9.2.2.9 System Considerations

Continued proper operation of the LM5067 hot swap circuit requires capacitance be present on the supply side

of the connector into which the hot swap circuit is plugged in, as depicted in Figure 8-1. The capacitor in the

“Live Backplane” section is necessary to absorb the transient generated whenever the hot swap circuit shuts off

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the load current. If the capacitance is not present, inductance in the supply lines will generate a voltage transient

at shut-off which can exceed the absolute maximum rating of the LM5067, resulting in its destruction.

If the load powered via the LM5067 hot swap circuit has inductive characteristics, a diode is required across the

LM5067’s output to provide a recirculating path for the load’s current. Adding the diode prevents possible

damage to the LM5067 as the OUT pin will be taken above ground by the inductive load at shutoff. See Figure

9-9

Inductive

Load

VCC

GND

BACKPLANE

PGD

OUT

LIVE

Q1 VOUT

GATESENSEVEE

VSYS

RIN

LM 5067

- 48V

PLUG-IN BOARD

CIN

Figure 9-9. Output Diode Required for Inductive Loads

9.2.2.9.1 System Considerations During Surge Events

The control MOSFET, Q1, has a body-diode, illustrated in Figure 9-10, where current can freely flow in the

reverse direction. The most common cause of a reverse current is a discharge event at the input of the hot-swap

circuit when the output capacitance discharges to the input. Normally, reverse current flow presents no issue for

hotswap devices during events such as shutdown and minor input power perturbations. However, extreme

situations such as high energy lighting surge line disturbances can expose the hot-swap circuit to pulses of ultra

fast - high amplitude reverse currents. It is common to observe current amplitudes on the order of 1000 A in

these situations. Figure 9-10 illustrates what an extreme input discharge event may look like and how it affects

the circuit.

LM5067

VEE

OUT

SENSE GATE

VCC

GND

INPUT

RAIL OUTPUT

GND

0 V

VCC - VEE

Reverse

Curent

(IREVERSE)

Region

IREVERSE

+ VRS -

RSQ1

+ VBD -

Input Rail

Discharge

Event

As the input dips, the output capacitor discharges causing a reverse transient current flow.

Z1D1COUT

Figure 9-10. Differential Voltage Across Sense Resistor

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Figure 9-10 shows how the induced reverse current spike causes a differential voltage across the sense resistor,

VRS, and the Q1 body-diode, VBD. The transient reverse current, IREVERSE, is approximately equal to

IREVERSE = COUT x dVIN/dt because the output capacitor is discharged through the input. Faster discharge

rates (dVIN/dt) will induce larger IREVERSE currents. If IREVERSE is extremely high, it can cause a large

negative voltage at the SENSE and OUT pins with respect to the VEE pin of the LM5067. If the negative

absolute maximum voltage rating is greatly exceeded, harmful currents can flow into the affected pins. Series pin

resistors can be implemented to limit the pin current caused by the negative voltage excursion. Schottky diodes

may also be implemented to completely clamp the voltage at these pins, Figure 9-11 illustrates this.

LM5067

VEE

OUT

SENSE GATE

VCC

GND

INPUT

RAIL OUTPUT

GND

RSQ1

Series resistors are used to limit harmful negative pin currents and schottky diodes are used to clamp the voltage at each pin.

Z1D1COUT

VEE

Dpin Rpin

Figure 9-11. Schottky Diodes Used to Clamp Pin Voltage

A typical value of Rpin can be 22 Ω to effectively limit the pin current during extreme negative voltage spikes. If

schottky diodes are used, they only need to be applied to SENSE_K, SENSE, and OUT. Each schottky diode

return pin should be coupled closely with the VEE plane to provide the most effective clamping. The schottky

diode at OUT should be able to withstand at least 100 V. VEE_K needs a series resistor even though it’s not

subjected to negative voltage spikes in order to balance the differential current sense voltage signal. Protecting

the SENSE_K, SENSE, and OUT pins from negative voltage spikes will facilitate a robust hot-swap circuit and

smooth operation during extreme reverse current surge events.

9.2.2.10 Power Good Pin

During initial power up, the Power Good pin (PGD) is high until the operating voltage (VCC – VEE) increases

above ≊2V. PGD then switches low, remaining low as the system voltage and the operating voltage increase.

After Q1 is switched on, when the voltage at the OUT pin is within 1.23 V of the SENSE pin (Q1 VDS <1.23 V),

PGD switches high indicating the output voltage is at, or nearly at, its final value. Any of the following situations

will cause PGD to switch low within ≊10 µs:

• The VDS of Q1 increases above 2.5 V.

• The system input voltage decreases below the UVLO level.

• The system input voltage increase above the OVLO level.

• The TIMER pin increases to 4V due to a fault condition.

A pull-up resistor is required at PGD as shown in Figure 9-12. The pull-up voltage (VPGD) can be as high as 80 V

above VEE, with transient capability to 100 V, and can be higher or lower than the system ground.

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Figure 9-12. Power Good Output

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If a delay is required at PGD, suggested circuits are shown in the following figure. In Figure 9-13, capacitor CPG

adds delay to the rising edge, but not to the falling edge. In Figure 9-14, the rising edge is delayed by RPG1 +

RPG2 and CPG, while the falling edge is delayed a lesser amount by RPG2 and CPG. Adding a diode across RPG2.

Figure 9-15 allows for equal delays at the two edges, or a short delay at the rising edge and a long delay at the

falling edge.

Figure 9-13. Adding Delay to the Power Good

Output Pin - Delay Rising Edge Only

Figure 9-14. Adding Delay to the Power Good

Output Pin - Long Delay at Rising Edge, Short

Delay at Falling Edge

Figure 9-15. Adding Delay to the Power Good Output Pin - Short Delay at Rising Edge and Long Delay

at Falling Edge, or Equal Delays

9.2.3 Application Curves

Figure 9-16. Insertion Delay Figure 9-17. Overload During Steady State

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Figure 9-18. Overload With Retry Figure 9-19. Power Into Short

Figure 9-20. Power Into Short Retry Zoomed Out Figure 9-21. Power Limited Startup

Figure 9-22. Short Circuit and Release Figure 9-23. Short Circuit Zoomed In

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Figure 9-24. Short Circuit Zoomed Out

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10 Power Supply Recommendations

10.1 Operating Voltage

The LM5067 operating voltage is the voltage from VCC to VEE. The maximum operating voltage is set by an

internal 13V zener diode. With the IC connected as shown in Figure 9-1, the LM5067 controller operates in the

voltage range between VEE and VEE+13V. The remainder of the system voltage is dropped across the input

resistor RIN, which must be selected to pass at least 2 mA into the LM5067 at the minimum system voltage.

11 Layout

11.1 Layout Guidelines

The following guidelines should be followed when designing the PC board for the LM5067:

• Place the LM5067 close to the board’s input connector to minimize trace inductance from the connector to

the FET.

• Place RIN and CIN close to the VCC and VEE pins to keep transients below the Absolute Maximum rating of

the LM5067. Transients of several volts can easily occur when the load current is shut off.

• The sense resistor (RS) should be close to the LM5067, and connected to it using the Kelvin techniques

shown in Figure 9-2.

• The high current path from the board’s input to the load, and the return path (via Q1), should be parallel and

close to each other wherever possible to minimize loop inductance.

• The VEE connection for the various components around the LM5067 should be connected directly to each

other, and to the LM5067’s VEE pin, and then connected to the system VEE at one point. Do not connect the

various components to each other through the high current VEE track.

• Provide adequate heat sinking for the series pass device (Q1) to help reduce thermal stresses during turn-on

and turn-off.

• The board’s edge connector can be designed to shut off the LM5067 as the board is removed, before the

supply voltage is disconnected from the LM5067. In Figure 11-1 the voltage at the UVLO/EN pin goes to VEE

before VSYS is removed from the LM5067 due to the shorter edge connector pin. When the board is inserted

into the edge connector, the system voltage is applied to the LM5067’s VEE and VCC pins before voltage is

applied to the UVLO/EN pin.

• If power dissipation within the LM5067 is high, an exposed copper pad should be provided beneath the

package, and that pad should be connected to exposed copper on the board’s other side with as many vias

as possible. See Thermal Considerations.

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11.2 Layout Example

GND

CARD EDGE

CONNECTOR

SENSE

VCC

UVLO

OVLO

VEE

GATE

OUT

PGD

PWR

TIMER

RIN

LM5067

CIN

Load

PLUG - IN CARD

VSYS

Figure 11-1. Suggested Board Connector Design

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12 Device and Documentation Support

12.1 Trademarks

All other trademarks are the property of their respective owners.

12.2 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

12.3 Glossary

TI Glossary This glossary lists and explains terms, acronyms, and definitions.

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13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead finish/

Ball material

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LM50672NPAR ACTIVE SOIC NPA 14 1000 RoHS & Green SN Level-3-260C-168 HR -40 to 125 LM50672

NPA

LM5067MM-1/NOPB ACTIVE VSSOP DGS 10 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SRUB

LM5067MM-2/NOPB ACTIVE VSSOP DGS 10 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SRVB

LM5067MMX-2/NOPB ACTIVE VSSOP DGS 10 3500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 SRVB

LM5067MW-1/NOPB ACTIVE SOIC NPA 14 50 RoHS & Green SN Level-3-260C-168 HR LM5067

MW-1

LM5067MWX-1/NOPB ACTIVE SOIC NPA 14 1000 RoHS & Green SN Level-3-260C-168 HR -40 to 125 LM5067

MW-1

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

Addendum-Page 2

(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LM50672NPAR SOIC NPA 14 1000 330.0 16.4 10.9 9.5 3.2 12.0 16.0 Q1

LM5067MM-1/NOPB VSSOP DGS 10 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LM5067MM-2/NOPB VSSOP DGS 10 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LM5067MMX-2/NOPB VSSOP DGS 10 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LM5067MWX-1/NOPB SOIC NPA 14 1000 330.0 16.4 10.9 9.5 3.2 12.0 16.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 30-Aug-2020

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LM50672NPAR SOIC NPA 14 1000 367.0 367.0 38.0

LM5067MM-1/NOPB VSSOP DGS 10 1000 210.0 185.0 35.0

LM5067MM-2/NOPB VSSOP DGS 10 1000 210.0 185.0 35.0

LM5067MMX-2/NOPB VSSOP DGS 10 3500 367.0 367.0 35.0

LM5067MWX-1/NOPB SOIC NPA 14 1000 367.0 367.0 38.0

PACKAGE MATERIALS INFORMATION

www.ti.com 30-Aug-2020

Pack Materials-Page 2

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PACKAGE OUTLINE

TYP

5.05

4.75

1.1 MAX

8X 0.5

10X 0.27

0.17

0.15

0.05

TYP

0.23

0.13

0 - 8

0.25

GAGE PLANE

0.7

0.4

NOTE 3

3.1

2.9

NOTE 4

3.1

2.9

4221984/A 05/2015

VSSOP - 1.1 mm max heightDGS0010A

SMALL OUTLINE PACKAGE

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.15 mm per side.

4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.

5. Reference JEDEC registration MO-187, variation BA.

110

0.1 C A B

PIN 1 ID

AREA

SEATING PLANE

0.1 C

SEE DETAIL A

DETAIL A

TYPICAL

SCALE 3.200

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EXAMPLE BOARD LAYOUT

(4.4)

0.05 MAX

ALL AROUND 0.05 MIN

ALL AROUND

10X (1.45)

10X (0.3)

8X (0.5)

(R )

TYP

0.05

4221984/A 05/2015

VSSOP - 1.1 mm max heightDGS0010A

SMALL OUTLINE PACKAGE

SYMM

LAND PATTERN EXAMPLE

SCALE:10X

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

METAL

SOLDER MASK

OPENING

NON SOLDER MASK

DEFINED

SOLDER MASK DETAILS

NOT TO SCALE

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

DEFINED

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EXAMPLE STENCIL DESIGN

(4.4)

8X (0.5)

10X (0.3)

10X (1.45)

(R ) TYP0.05

4221984/A 05/2015

VSSOP - 1.1 mm max heightDGS0010A

SMALL OUTLINE PACKAGE

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

SYMM

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:10X

MECHANICAL DATA

NPA0014B

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