KMA221J - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

The KMA221 is a magnetic angle sensor module. The MagnetoResistive (MR) sensor

bridges, the mixed signal Integrated Circuit (IC) and the required capacitors are integrated

into a single package.

This angular measurement module KMA221 is pre-programmed, pre-calibrated and

therefore, ready to use.

The KMA221 allows user-specific adjustment s of an gular r ange, zer o angle and clamping

voltages. The settings are stored permanently in a non-volatile memory.

1.2 Features and benefits

KMA221

Programmable angle sensor

Rev. 1 — 16 July 2013 Product data sheet

High precision sensor for magnetic

angular measurement

High temperature range up to 160 C

Single package sensor module with

integrated filters for improved

ElectroMagnetic Compatibility (EMC)

Analog ratiometric output voltage

Automotive qualified in accordance with

AEC-Q100 Rev-G

Overvoltage protection up to 16 V

Programmab le user adjustmen ts,

including zero angle and angular range

Programming via One-Wire Interface

(OWI)

Fail-safe non-volatile memory with write

protection using lock bit

User-programmable 32-bit identifier

Independent from magnetic field

strength above 35 kA/m

Magnet-loss, power-loss and broken

bond wire detection

Ready to use without external

components

Factory calibrated

Product data sheet Rev. 1 — 16 July 2013 2 of 36

NXP Semiconductors KMA221

Programmable angle sensor

2. Pinning information

3. Ordering information

Table 1. Pinning

Pin Symbol Description Simplified outline

1 OUT/DATA analog output or data interface

2 GND ground

DD supply voltage

4 n.c. not connected

4321

Table 2. Orderin g information

Type number Package

Name Description Version

KMA221 SIL4 plastic, single in-line package SOT1188-1

xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx

xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx

xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx

xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x

Product data sheet Rev. 1 — 16 July 2013 3 of 36

NXP Semiconductors KMA221

Programmable ang le sens or

4. Functional diagram

Fig 1. Functional diagram of KMA221

GND

POWER-LOSS

DETECTION

ONE-WIRE

INTERFACE

SERIAL

INTERFACE

ANGULAR

RANGE

ADJUSTMENT

ANGLE

CALCULATION

POWER-LOSS

DETECTION

output

buffer

DACADC

MULTIPLEXER (MUX)

differential

amplifier

LOW-PASS

FILTER

GND

LOW-PASS

FILTER

OSCILLATOR

OFFSET

CORRECTION

CLOCK

GENERATOR

TEST

CONTROL

ANALOG

VOLTAGE

REGULATOR

(CLEAN)

NON-VOLATILE

MEMORY

MAGNETORESISTIVE

SENSOR BRIDGES

INTEGRATED

CAPACITANCES

SIGNAL CONDITIONING INTEGRATED CIRCUIT

DIGITAL

FILTER AND

AVERAGING

DEMUX

ANALOG

VOLTAGE

REGULATOR

(SWITCHING)

DIGITAL

VOLTAGE

REGULATOR

UNDERVOLTAGE

DETECTION/

POR

Cblock

VDD

OUT/DATA

GND

001aan661

Product data sheet Rev. 1 — 16 July 2013 4 of 36

NXP Semiconductors KMA221

Programmable angle sensor

5. Functional description

The KMA221 amplifies two orthogonal differential signals from MR sensor bridges and

converts them into the digital domain . The angle is calculated using the COordinate

Rotation DIgital Computer (CORDIC) algorithm. After a digital-to-analog conversion, the

analog signal is provided to the output as a linear representation of the angular value.

Zero angle, clamping voltages and angular range are programmable. In addition, two

16-bit registe rs are available for cust om e r purposes, such as sample identification.

The KMA221 comprises a Cyclic Redundancy Check (CRC) and an Error Detection and

Correction (EDC). It also has magnet-loss and broken bond wire detection to ensure

a fail-safe operation. If either the supply voltage or the ground line of the mixed signal IC

is interrupted, a power-loss detection circuit pulls the analog outpu t to the remaining

connection.

After multiplexing the two MR Wheatstone bridge signals and their successive

amplification, the signal is converted into the digit al domain by an Analog-to-Digital

Converter (ADC). Further processing is done within an on-chip state machine. This state

machine controls offset cancelation, calculation of the mechanical angle using the

CORDIC algorithm, as well as zero angle and angular range adjustment. The internal

Digital-to- Analog Converte r (DAC) and analog output st age are used for the con version of

the angle information into an analog output voltage, which is ratiometric to the supply

voltage.

The configuration parameters are stored in a user-programmable non-volatile memory.

The OWI (accessible using pin OUT/DATA) is used for accessing the memory. In order to

protect the memory content, a lock bit can be set. After locking the non-volatile memory,

its content cannot be changed anymore.

5.1 Angular measurement directions

The differential signals of the MR sensor bridges depend only on the direction of the

external magnetic field strength Hext, which is applied p arallel to the plane of the sensor.

In order to obtain a correct output signal, exceed the minimum saturation field strength.

Product data sheet Rev. 1 — 16 July 2013 5 of 36

NXP Semiconductors KMA221

Programmable angle sensor

Since the Anisotropic MR (AMR) effect is periodic over 180, the sensor output is also

180-periodic. The angle is calculated relative to a freely programmable zero angle. The

dashed line indicates the mechanical zero degree position.

6. Analog output

The KMA221 provides one analog output signal on pin OUT/DATA. The measured angle

 is converted linearly into a value, which is ratiometric to the supply voltage VDD. Either a

positive or a negative slope is provided for this pur pose.

Table 3 describes the analog output behavior for a positive slope. For exam p le, if

a magnetic field angle, above the pr ogrammed maximum angle max but below the clamp

switch angle sw(CL), is applied to the sensor, the analog output is set to th e upper

clamping voltage. If the magnetic field angle is larger than the clamp switch angle, the

analog output switches from up pe r to lower cla mping vo ltage. If there is a negative slope,

the clamping voltages are changed.

The analog output volt age range encodes both angular and diagno stic information. A valid

angle value is between the upper and lower clamp ing voltage. If the analog output is in the

diagnostic range, that is below 4 %VDD or above 96 %VDD, an error condition has been

detected. The analog output repeats every 180.

Fig 2. Angular measurement directions

008aaa276

Hext

4321

Table 3. Analog output behavior for a po sitive slope

Magnetic field angle Analog output

max <  < sw(CL) V(CL)u

sw(CL) <  < ref + 180V(CL)l

Product data sheet Rev. 1 — 16 July 2013 6 of 36

NXP Semiconductors KMA221

Programmable angle sensor

7. Diagnostic features

The KMA221 provides several diagnostic features:

7.1 CRC and EDC supervision

The KMA221 includes a supervision of the programmed data. At power-on, a CRC of the

non-volatile memory is performed. Furthermore the memory is protected against bit

errors. Every 16-bit data word is saved internally as a 22-bit word for this purpose. The

protection logic corrects any single-bit error in a data word, while the sensor continues in

normal operation mode. Furthermore the logic detects double-bit error per word and

switches the output into diagnostic mode.

7.2 Magnet-loss detection

If the applied magnetic field strength is not sufficient, the KMA221 can raise a diagnostic

condition. In order to enter the diagnostic m ode, d ue to magnet- loss, enable the detection

first. The device can be programmed into active diagnostic mode, where the output is

driven below 4 %VDD or above 96 %VDD.

7.3 Power-loss detection

The power-loss detection circuit enables the detection of an interrupted supply or ground

line of the mixed signal IC. If there is a power-loss condition, two internal switches in the

sensor are closed, connecting the pin of the analog output to the supply voltage and the

ground pins.

max =ref +rng

Fig 3. Characteristic of the analog output

001aag811

αrng

0αref αmax

αsw(CL) αref + 180°

α (deg)

180

(%VDD)

V(CL)u

V(CL)I

Product data sheet Rev. 1 — 16 July 2013 7 of 36

NXP Semiconductors KMA221

Programmable angle sensor

Table 4 describes the power-loss behavior and gives the resulting output voltage

depending on the interrupted supply or ground line and the load resistance.

7.4 Broken bond wire detection

The broken bond wire detection circuit enables the detection of an interrupted supply or

ground line of the MR sensor bridge. If there is a broken bond wire, the device goes into

diagnostic mode and a status bit is set.

7.5 Low supply voltage detection and overvoltage protection

If the supply voltage is below the switch-off threshold voltage, a status bit is set and the

device goes into diagnostic mode. If the supply voltage is above th e overvoltage switch -on

threshold voltage, the device enters diagnostic mode. Table 5 describes the system

behavior depending on the voltage range of the supply voltage.

Fig 4. Equivalent output circuit in a power-loss condition

Table 4. Power-loss behavior

Load resistance Interrupted supply line Interrupted ground line

RL(ext) >5kVO4%V

DD VO96 %VDD

DDD

=2SO

287'$

*1'

.0$

Table 5. System behavior

Supply voltage State Description

0V to 1.8 V start-up power The output buffer drives an active LOW or is powered down.

The switches of the power-loss detection circuit are not fully

opened and set the output to a level between ground and half

the supply voltage.

1.8 V to VPOR power-on

reset The power-loss charge pump is fully operational and turns the

switches of the detection circuit off . Th e output buffer drives

an active LOW and sets the output to the lower diagnostic

level. During the reset phase, all circuits are in reset and/or

Power-down mode.

VPOR to Vth(on) or

Vth(off)

initialization The digital core and the oscillator are active. After reset, the

content of the non-volatile memory is copied into the shad ow

registers. The output buffer drives an active LOW and sets the

output to the lower diagnostic level.

Vth(on) or Vth(off) to

minimum VDD

functional

operation All analog circuits are active and the measured angle is

available at the analog outp ut. Not all paramete rs are within

the specified limits.

Product data sheet Rev. 1 — 16 July 2013 8 of 36

NXP Semiconductors KMA221

Programmable angle sensor

Table 6 describes the diagnostic behavior and the resulting output voltage dependin g on

the error case. Furthermore the duration and termination condition to enter and leave the

diagnostic mode are given, respectively.

[1] Status bit stays set in command register until power-on reset.

[2] Depending on the diagnostic level setting.

8. Limiting values

[1] Overvoltage on analog output and supply within the specified operating voltage range.

Minimum VDD to

maximum VDD

normal

operation All analog circuits are active and the measured angle is

available at the analog outp ut. All parameters are within the

specified limits.

Maximum VDD to

Vth(ov)

functional

operation All analog circuits are active and the measured angle is

available at the analog outp ut. Not all paramete rs are within

the specified limits.

Vth(ov) to 16 V overvoltage The digital core and the oscillator are active but all other

circuits are in Power-down mode. The output is set to the

lower diagnostic level.

Table 6. Diagnostic behavior

Diagnostic condition Duration Analog output Termination conditi on

Low voltage 1 s<t<10s4%V

DD functional or normal

operation

Overvoltage 1 s<t<10s4%V

DD functional or normal

operation

Checksum error n/a 4%V

DD or 96 %VDD[2] power-on reset[1]

Double-bit error n/a 4%V

DD or 96 %VDD[2] power-on reset[1]

Magnet-loss 0.5 ms < t < 6 ms 4%V

DD or 96 %VDD[2] magnet present[1]

Power-loss 2ms 4%V

DD or 96 %VDD[2] power-on reset

Broken bond wire 0.2 ms < t < 1 ms 4%V

DD or 96 %VDD[2] power-on reset[1]

Table 5. System behavior …continued

Supply voltage State Description

Table 7. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDD supply voltage 0.3 +16 V

VOoutput voltage 0.3 +16 V

VO(ov) overvoltage output volt age Tamb <140C

at t < 1 h [1] Vth(ov) 16 V

Irreverse current Tamb <70C- 150mA

Tamb ambient temperature 40 +160 C

Tamb(pr) programming ambient temperature 10 70 C

Tstg storage temperature 40 +125 C

Non-volatile memory

tret(D) data retention time Tamb =50C 17 - year

Nendu(W_ER) write or erase endurance Tamb(pr) =70C 100 - cycle

Product data sheet Rev. 1 — 16 July 2013 9 of 36

NXP Semiconductors KMA221

Programmable angle sensor

9. Recommended operating conditions

[1] Normal operation mode.

[2] Between ground and analog output.

[3] Command mode.

[4] Power-loss detection is only possible with a load resistance within the specified range connected to the

supply or ground line.

10. Thermal characteristics

11. Characteristics

[1] Normal operation and diagnostic mode excluding overvoltage and undervoltage within the specified

operating supply voltage range.

[2] Without load current at the analog output.

[3] Normal operation and diagnostic mode over full voltage range up to limiting supply voltage at steady state.

[4] With minimum load resistance at the analog output.

[5] Diagnostic mode for a supply voltage above the overvoltage threshold voltage up to the limiting supply

voltage.

Table 8. Operating conditions

In a homogenous magnetic field.

Symbol Parameter Conditions Min Typ Max Unit

VDD supply voltage [1] 4.55.05.5V

Tamb ambient temperature 40 - +160 C

Tamb(pr) programming ambient temperature 10 - 70 C

CL(ext) external load capacitance [1][2] 0 - 22 nF

[2][3] 0- 6.8nF

RL(ext) external load resistance [4] 5- k

Hext external magnetic field strength 35 - - kA/m

Table 9. Thermal characteris tics

Symbol Parameter Conditions Typ Unit

Rth(j-a) t herm al resis ta nce fr om junc tion to

ambient 100 K/W

Table 10. Mechan ical characteristics

Symbol Parameter Conditions Min Typ Max Unit

Flead mechanical force to the leads Tamb =25C --10N

Ffin mechanical force to the fin holder Tamb =25C --15N

Table 11. Supply curre nt

Characteristics are valid for the operating conditions, as specified in Section 9.

Symbol Parameter Conditions Min Typ Max Unit

IDD supply current [1][2] 5- 10.5mA

[3][4] --13mA

Ioff(ov) overvoltage switch-off current [5] --6mA

Product data sheet Rev. 1 — 16 July 2013 10 of 36

NXP Semiconductors KMA221

Programmable angle sensor

Table 12. Power-on reset

Characteristics are valid for the operating conditions, as specified in Section 9.

Symbol Parameter Conditions Min Typ Max Unit

Vth(on) switch-on threshold

voltage analo g ou t pu t sw itches on, if

VDD >V

th(on)

- 4.30 4.45 V

Vth(off) switch-off threshold

voltage analo g output switch es off, if

VDD <V

th(off)

3.90 4.10 - V

Vhys hysteresis voltage Vhys =V

th(on) Vth(off) 0.1 0.2 - V

VPOR power-on reset voltage IC is initialized - 3.3 3.6 V

Vth(ov) overvoltage threshold

voltage analo g output switch es off, if

VDD >V

th(ov)

6.5 7.5 8.0 V

Vhys(ov) overvoltage hysteresis

voltage 0.1 0.3 - V

Table 13. Module performance

Characteristics are valid for the operating conditions, as specified in Section 9.

Symbol Parameter Conditions Min Typ Max Unit

res angle resolution [1] - - 0.04 deg

max maximum angle programmable angular range

for V(CL)u V(CL)l 80 %VDD

[2] 5 - 180 deg

ref reference angle programmable zero angle [2] 0 - 180 deg

VO(nom) nominal output voltage at full supply operating range 5 - 95 %VDD

VO(udr) upper diagnostic range

output voltage [3][4][5] 96 - 100 %VDD

VO(ldr) lower diagnostic range

output voltage [3][4][5] 0-4%V

V(CL)u upper clamping voltage [4][5][6] 40 - 95 %VDD

V(CL)l lower clamping volt age [4][5][6] 5-30.5%V

V(CL) clamping voltage variation deviation from programmed

value [4][5] 0.3 - +0.3 %VDD

Vn(o)(RMS) RMS output noise voltage equivalent power noise [1][4] -0.42.5mV

lin linearity error temperature range

40 Cto+160C[4][7] 1.2 - +1.2 deg

temperature range

40 Cto+140C[4][7] 1 - +1 deg

temp temperature drift error temperature range

40 Cto+160C[1][4][7]

[8] - - 0.8 deg

temperature range

40 Cto+140C[1][4][7]

[8] - - 0.65 deg

tempRT temperature drift error at

room temperature temperature range

40 Cto+160C[7][8][9] - - 0.65 deg

temperature range

40 Cto+140C[7][8][9] - - 0.55 deg

hys hysteresis error referred to input [4][7] - - 0.09 deg

lin microlinearity error referred to input [4][7] 0.1 - +0.1 deg

Product data sheet Rev. 1 — 16 July 2013 11 of 36

NXP Semiconductors KMA221

Programmable angle sensor

[1] At a nominal output voltage between 5 %VDD and 95 %VDD and a maximum angle of max = 180.

[2] In steps of resolution < 0.022.

[3] Activation is dependent on the programmed diagnostic mode.

[4] At a low-pass filtered analog output with a cut-off frequency of 0.7 kHz.

[5] Settling to these values is limited by 0.7 kHz low-pass filtering of analog output.

[6] In steps of 0.02 %VDD.

[7] Definition of errors is given in Section 12.

[8] Based on a 3 standard deviation.

[9] Room temperature is given for an ambient temperature of 25 C.

[10] Graph of angular error is shown in Figure 5.

ang angular error temperature range

40 Cto+160C[4][7]

[10] 1.35 - +1.35 deg

temperature range

40 Cto+140C[4][7]

[10] 1.1 - +1.1 deg

mang slope of angular error [4][7]

[10] - - 0.04 deg/deg

ZO(pl) power-loss output

impedance impedance to remaining

supply line in case of lost

supply voltage or lost ground

--210

Table 13. Module performance …continued

Characteristics are valid for the operating conditions, as specified in Section 9.

Symbol Parameter Conditions Min Typ Max Unit

(1) 40 C to +160 C

(2) 40 C to +140 C

Fig 5. Envelope curve for the magnitude of angular error

001aal765

1.40

1.35

|Δφang|

(deg)

1.10

0.75

0.65

0−16 −12.25 −1 0 1 12.25 α1 − α0 (deg)

16 20

−20

(1)

(2)

Product data sheet Rev. 1 — 16 July 2013 12 of 36

NXP Semiconductors KMA221

Programmable angle sensor

[1] Measured at 1 MHz.

Table 14. Dynamics

Characteristics are valid for the operating conditions, as specified in Section 9.

Symbol Parameter Conditions Min Typ Max Unit

ton turn-on time until first valid result - - 5 ms

fupd update frequency 2.4 3.125 - kHz

tssettling time after an ideal mechanical

angle step of 45, until 90 %

of the final val u e is re ach e d

--1.8ms

tcmd(ent) enter command mode time after power-on 20 - 30 ms

trec(ov) overvoltage recovery time after overvoltage - - 4 ms

Table 15. Digital interface

Characteristics are valid for the operating conditions, as specified in Section 9.

Symbol Parameter Conditions Min Typ Max Unit

VIH HIGH-level input voltage 80 - - %VDD

VIL LOW-level input voltage - - 20 %VDD

VOH HIGH-level output voltage IO=2mA 80 - - %V

VOL LOW-level output voltage IO=2mA - - 20 %V

Iod overdrive current absolute value for overdriving

the output buffer --20mA

tstart start time LOW level before rising edge 5 - - s

tstop stop time HIGH level before falling edge 5 - - s

Tbit bit period the load capacit ance limits the

minimum period 10 - 100 s

Tbit bit period deviation deviation between received

clock and sent clock 0.8Tbit 1Tbit 1.2Tbit s

tw0 pulse width 0 0.175Tbit 0.25Tbit 0.375Tbit s

tw1 pulse width 1 0.625Tbit 0.75Tbit 0.825Tbit s

tto time-out time communication reset

guaranteed after maximum tto

--220s

ttko(slv) slave takeover time duration of LOW level for

slave takeover 1-5s

ttko(mas) mast er takeover time duration of LOW l eve l for

master takeover 0Tbit -0.5T

bit s

tprog programming time for a single memory address 20 - - ms

tcp charge pump time waiting time after enabling the

non-volatile memory charge

pump clock

1-- ms

Table 16. I nternal capacitances

Characteristics are valid for the operating conditions, as specified in Section 9.

Symbol Parameter Conditions Min Typ Max Unit

Cblock blocking capacitance [1] 50 100 150 nF

CLload capacitance [1] 1.1 2.2 3.3 nF

Product data sheet Rev. 1 — 16 July 2013 13 of 36

NXP Semiconductors KMA221

Programmable angle sensor

12. Definition of errors

12.1 General

Angular measurement er ror s by th e KMA22 1 result fr om linearity err ors , temper atur e dr ift

errors and hysteresis errors. Figure 6 shows the output signal of an ideal sensor, where

the measured angle meas corresponds ideally to the magnetic field angle . This curve

represents the angle reference line ref() with a slope of 0.5 %VDD/degree.

The angular range is set to max =180 and the clamping voltag es are programmed to

V(CL)l =5%V

DD and V(CL)u =95%V

DD for a valid definition of errors.

12.2 Hysteresis error

The device output performs a positive (clockwise) rotation and negative (counter

clockwise) rotation over an an g ula r ra ng e of 180 at a constant temperature.

The maximum difference between the angles defines the hysteresis error hys.

Equation 1 gives the mathema tical descr ipt i on for the hysteresis value hys:

(1)

Fig 6. Definition of the reference line

001aag812

180 α (deg)

meas

(deg)

ref

(α)

Fig 7. Definition of the hysteresis erro r

001aag813

180 α (deg)

meas

(deg)

Δφ

hys

hys

() meas 180

()meas 0

()–=

Product data sheet Rev. 1 — 16 July 2013 14 of 36

NXP Semiconductors KMA221

Programmable angle sensor

12.3 Linearity error

The KMA221 outp ut signal deviation from a best straight line BSL, with the same slop e as

the reference line, is defined as linearity error. The magnetic field angle is varied at fixed

temperatures for measurement of this linearity error. The output signal deviation from the

best straight line at the given temperature is the linearity error lin. It is a function of the

magnetic field angle  and the temperature of the device Tamb.

12.4 Microlinearity error

 is the magnetic field angle. If  =1, the microlinearity error lin is the device output

deviation from 1.

Fig 8. Definition of the linearity error

001aag814

180 α (deg)

φmeas

(deg)

Δφlin(α, Tamb)

φref(α)

φBSL(α, Tamb)

Fig 9. Definition of the microlinearity error

001aag815

α (deg)

meas

(deg)

Δφ

meas

= 1° + Δφ

μlin

(α)

ref

(α)

Δα = 1°

Product data sheet Rev. 1 — 16 July 2013 15 of 36

NXP Semiconductors KMA221

Programmable angle sensor

12.5 Temperature drif t error

The temperature drift temp is defined as the envelope over the deviation of the angle

versus the temperature range. It is considered as the pure thermal effect.

Equation 2 gives the mathematical description for temperature drift value temp:

(2)

with:

Tx: temperature for maximum meas at angle 

Ty: temperature for minimum meas at angle 

The deviation from the value at room temperature tempRT describes the temperature

drift of the angle, compared to the value , wh ich the sensor provides at room temperature:

(3)

with:

TRT: room temperature (25 C)

12.6 Angular error

The angular error ang is the difference between mechanical angle and sensor output

during a movement from 0 to 1. Here 0 and 1 are arbitrary angles within the angular

range. The customer initially programs the angle measurement at 0 at room te mperature

and zero hour upon p roduction. The angle measuremen t at 1 is made at any temperature

within the ambient temperature range:

(4)

with:

0, 1: arbitrary mechanical angles within the angular range

meas(0, TRT): programmed an gle at 0, TRT =25C and zero hour upon prod uction

meas(1, Tamb): the sensor measures angle at 1 and any temperature within Tamb

Fig 10. Definition of the temperat ure drift error

001aag816

180 α (deg)

meas

(deg)

Δφ

temp

temp

() meas  Tx

,()meas  Ty

,()–=

temp RT  Tamb

,()meas  Tamb

,()meas  TRT

,()–=

ang meas 1 Tamb

,()meas 0 TRT

,()–

10

––=

Product data sheet Rev. 1 — 16 July 2013 16 of 36

NXP Semiconductors KMA221

Programmable angle sensor

This error comprises non-linearity and temperature drift related to the room temperature.

Figure 11 shows the envelope curve for the magnitude of angular error |ang| versus 1

for all angles 0 and all temperatures Tamb within the ambient temper ature range. If 1 is

in the range of 1 around 0, |ang| has its minimum. Here only the microlinearity error

lin and the temperature drift related to the room temperature |tempRT| occurs. If 1

deviates from 0 by more than 1 in either direction, |ang| can increase. Slope mang

defines the gradient.

Equation 5 to Equation 8 express the angular err or:

for |1

0|1

(5)

for 1<|1

0|<*

(6)

for |1

0|*

(7)

with:

(8)

Fig 11. Envelope curve for the magnitude of angular error

001aal766

|Δφ

μlin

+ Δφ

temp|RT

−α*α

− 1°

|Δφ

ang

+ 1°+α*

ang

|Δφ

ang(peak)

 ang  lin temp RT

+mang 10

–1–+=

 ang  lin



2temp RT



 ang(peak)  lin temp RT

+–

mang

----------------------------------------------------------------------------------- 01++=

Product data sheet Rev. 1 — 16 July 2013 17 of 36

NXP Semiconductors KMA221

Programmable angle sensor

13. Programming

13.1 General description

The KMA221 provides an OWI to enable programming of the device which uses

pin OUT/DATA bidirectionally.

In general the device runs in analog output mode, the normal operation mode.

The embedded progra mming data configures this mode. After a p ower-on reset once time

ton has elapsed,it start s. In this mode, the magnetic field angle is converted into the

correspond in g ou tp ut voltage.

A second mode, the command mode enables programming. In this mode, the customer

can adjust all required p arameters (for example zero a ngle and angular range) to mee t the

application requirements. After enabling the internal charge pump and waiting for tcp,

the data is stored in the non-volatile memory. After changing the contents of the memory,

recalculate an d writ e th e che cksum (see Section 13.4).

In order to enter the command mode, send a specific command sequence after

a power-on reset and during the time slot tcmd(ent). The external source used to send the

command sequence must overdrive the output buffers of the KMA221. In doing so,

it provides current Iod.

During communication, the KMA221 is always the slave and the external programming

hardware is always the master. Figure 12 illustrates the structure of the OWI data format.

The master provides the start condition, which is a rising edge after a LOW level. Then

a command byte which can be either a read or a write command is sent. Depending on

the command, the master or the slave has to send the data immediately after the

command sequence. If th ere is a read command, an a dditional handover or takeover bit is

inserted before and a fte r the data bytes. The master must close each communication with

a stop condition. If the slave does not receive a rising edge for a time longer than tto,

a time-out condition occurs. Th e bus is reset to the idle sta te and waits for a start condition

and a new command. This behavior can be used to synchronize the device regardless of

the previous state.

All communication is based on this structure (see Figure 12), even for entering the

command mode. The customer can access the non-volatile memory, CTRL1,

TESTCTRL0 and SIGNATURE registers (described in Section 13.5). Only a power-on

reset leaves the command mode. A more deta iled description of the program ming is given

in the next sections.

Fig 12. OWI data format

001aag742

write

IDLE IDLESTART STOPCOMMAND DATA BYTE 1 DATA BYTE 2

IDLE START COMMAND HANDOVER TAKEOVER STOP IDLEDATA BYTE 1 DATA BYTE 2

read

Product data sheet Rev. 1 — 16 July 2013 18 of 36

NXP Semiconductors KMA221

Programmable angle sensor

13.2 T iming characteristics

As described in the previous section, a start and stop condition is necessary for

communication. The LOW-level duration before the rising edge of the start condition is

defined as tstart. The HIGH-level duration af ter the rising edge of the stop condition is

defined as tstop. These parameters, together with all other timing characteristics are

shown in Table 15.

Figure 14 shows the coding of a single bit with a HIGH level of VIH and a LOW level of VIL.

Here the pulse width tw1 or tw0 represents a logic 1 or a logic 0 of a full bit period Tbit,

respectively.

13.3 Sending and receiving data

The master has to control the communication during sending or receiving data.

The command byte defines the region, address and type of command the master

requests. Read commands need an additional handover or takeover bit. Insert this bit

before and after the two data bytes (see Figure 12). However the OWI is a serial data

transmission, whereas the Most Significant Byte (MSB) send at first.

Fig 13. OWI start and stop cond iti on

Fig 14. OWI timing

001aag817

start

stop

001aag818

0.175

bit = 0 bit = 1

0.25

0.375

bit

0.625

0.75

0.825

bit

Table 17. Format of a command byte

76543210

CMD7 CMD6 CMD5 CMD4 CMD3 CMD2 CMD1 CMD0

Table 18. Comman d by te bit desc ription

Bit Symbol Description

7 to 5 CMD[7:5] region bits

000 = 16-bit non-volatile memory

001 to 011 = reserved

100 = 16-bit register

101 to 111 = reserved

Product data sheet Rev. 1 — 16 July 2013 19 of 36

NXP Semiconductors KMA221

Programmable angle sensor

A more detailed description of all customer accessible registers is given in Section 13.5.

Both default value and the complete command including the address and write or read

request are als o liste d.

13.3.1 Write access

To write data to the non-volatile memory, enable the internal charge pump. Set bits

CP_CLOCK_EN and WRITE_EN and wait for tcp enables the internal charge pump.

Perform the followin g pr oc ed u re for writ e ac cess:

1. Start condition: The master drives a rising edge after a LOW level

2. Command: The master sends a write command (CMD0 = 0)

3. Data: The master sends two data bytes

4. Stop condition: The master drives a rising edge after a LOW level

Figure 15 shows the write access of the digital interface. The signal OWI represents the

data on the bus from the master or slave. The signals: master output enable and slave

output enable indicate when the master or the slave output is enabled or disabled,

respectively.

Note: As already mentioned in Section 13.1, use the write procedure to enter the

command mode. If command mode is not ente red, communica tion is not possible and the

sensor operates in no rmal operation m ode. Afte r changing an address, the time tprog must

elapse before changing another address. After changing the contents of the non-volatile

memory, recalculate and write the checksum (see Section 13.4).

4 to 1 CMD[4:1] address bits

0 CMD0 read/write

0 = write

1 = read

Table 18. Comman d by te bit desc ription …continu ed

Bit Symbol Description

(1) Missing rising edges generate a time-out condition and the written data is ignored.

(2) If the master does not drive the bus, the bus-pull defines the bus.

Fig 15. OWI write access

001aag743

master

output

enable

slave

output

enable

START CMD7 CMD0 STOP

(1)

(2)

IDLEWDATA15 WDATA0

OWI

Product data sheet Rev. 1 — 16 July 2013 20 of 36

NXP Semiconductors KMA221

Programmable angle sensor

13.3.2 Read access

To read data from the sensor, perform the following procedure:

1. Start condition: The master drives a rising edge after a LOW level

2. Command: The master sends a read command (CMD0 = 1)

3. Handover: The master se nds a handover bit, that is a logic 0 and disables the output

after a three-quarter bit period

4. Takeover: The slave drives a LOW level after the falling edge for ttko(slv)

5. Data: The slave sends two data bytes

6. Handover: The slave sends a handover bit, that is a logic 0 and disables the output

after a three-quarter bit period

7. Takeover: The master drives a LOW level after the falling edge for ttko(mas)

8. Stop condition: The master drives a rising edge after a LOW level

Figure 16 shows the read access of the digital interface. The signal OWI represents the

data on the bus from the master or slave. The signals: master output enable and slave

output enable indicate when the master or the slave output is enabled or disabled,

respectively.

(1) Duration of LOW level for slave takeover ttko(slv).

(2) The master output enable and the slave output enable overlap, because both drive a LOW level.

However this behavior ensures the independency from having a pull-up or pull-down on the bus. In

addition, it improves the EMC robustness, because all levels are actively driven.

(3) Duration of LOW level for master takeover ttko(mas).

(4) If the master does not take over, the pull-up generates the stop condition. Otherwise a time-out is

generated if there is a pull-down and the slave waits for a rising edge as start condition.

(5) If the master does not drive the bus, the bus-pull defines the bus.

Fig 16. OWI read access

001aag744

master

output

enable

slave

output

enable

START CMD7 CMD0 RDATA0

(1)

(2) (2) (4)

(5)

(3)

HANDSHAKE HANDSHAKERDATA15 IDLESTOP

OWI

Product data sheet Rev. 1 — 16 July 2013 21 of 36

NXP Semiconductors KMA221

Programmable angle sensor

13.3.3 Entering the command mode

After a power-on reset, the sensor provides a time slot tcmd(ent) for entering the command

mode. Send a specific command sequence (see Figure 17). If command mode is not

entered, the sensor starts in the normal operation mode. If the sensor stays in the

diagnostic mode, the master can write the signatur e with o ut a powe r- on res et.

During the command mode sequence, the analog output is enabled. The external

programming hardware has to overdrive the output with current Iod. If command mode is

activated, the analog output is disable d and pin OUT/DATA operates as a digital inter face.

13.4 Cyclic redundancy check

As already mentioned in Section 7, there is an 8-bit checksum for the non-volatile memory

data. To calculate this value, the MSB of the memory data word generates the CRC at first

over all corresponding addresses in increasing order.

Read out all addresses from 8h to Fh for calculating the checksum. The Least Significant

Byte (LSB) of address Fh which contains the previous checksum must be overwritten with

0h before the calculation can be started.

Setting bits CP_CLOCK_EN and WRITE_EN (see Section 13.5.1) and waiting for tcp

enables the internal charge pump for programming.

The generator polynomial for the calculation of the checksum is:

(9)

With a start value of FFh and the data bits are XOR at the x8 point.

Fig 17. OWI co mma nd mode procedure

008aaa263

tcmd(ent)

signaturecommand

STARTOWI

VDD

94h 16h F4h STOP

Gx() x8x2x1+++=

Product data sheet Rev. 1 — 16 July 2013 22 of 36

NXP Semiconductors KMA221

Programmable angle sensor

13.4.1 Software example in C

1 #include <stdio.h.>

3 // calc_crc accepts unsigned 16-bit data in data

4int calc_crc(int crc, unsigned int data)

6const int gpoly = 0x107; // generator polynomial

7int i; //index variable

8for (i = 15; i >= 0; i--)

10 crc <<= 1; //shift left

11 crc = (int) ((data & (1u<<i))>>i);

12 // XOR of with generator polynomial when MSB(9) = HIGH

13 if (crc & 0x100) crc ^= gpoly;

14 }

15 return crc;

16 }

17 int main(void)

18 {

19 int crc, crc_res, i;

20 // 8 LSB are CRC field filled with 0

21 unsigned int data_seq[] = {0x0000, 0xFFC1, 0x0400, 0x0100,

22 0x1300, 0x0000, 0x0000, 0x0000};

23 // calculate checksum over all data

24 crc = 0xFF; // start value of crc register

25 printf(“Address\tValue\n”);

26 for (i = 0; i <= 7; i++)

27 {

28 printf(“0x%1X\t0x%04X\n”, i, data_seq[i]);

29 crc = calc_crc(crc, data_seq[i]);

30 }

31 crc_res = crc; // crc_res = 0xA9

32 printf(“\nChecksum\n0x%02X\n”, crc_res);

33 // check procedure for preceding data sequence

34 crc = 0xFF;

35 for (i = 0; i <= 6; i++)

36 crc = calc_crc(crc, data_seq[i]);

37 // last word gets crc inserted

38 crc = calc_crc(crc, data_seq[i]  crc_res);

39 printf(“\nCheck procedure for data sequence: must be 0x00 is 0x%02X.\n”, crc);

40 return 1;

41 }

The checksum of this data sequence is A9h.

Product data sheet Rev. 1 — 16 July 2013 23 of 36

NXP Semiconductors KMA221

Programmable angle sensor

13.5 Registers

13.5.1 Command registers

To enter the command mode, write the signature given in Table 19 into the specific

command, the signature follows it, but after a power-on reset and not later than tcmd(ent).

Table 19. Command registers

Command

write/read Register Bit Access Field Description

82h/83h CTRL1 15 R IN_DIAG_MODE shows if there is a diagnostic condition present; the

setting of register field FORCE_DIAG_OFF does

not affect this bit

14 W FORCE_DIAG_OFF force diagnostic mode off; default: 0b

13 - - reserved

12 R LOW_VOLTAGE_DET low voltage condition detected

11 R/W CP_CLOCK_EN charge pump clock enabled (must be set after

setting write enable signal for writing to non-volatile

memory); default: 0b

10 and 9 - - reserved

8 R ERR_CORRECT single-bit error of non-volatile memory has been

detected and corrected; updated every memory

readout; remains set until the diagnostic condition

disappears and a power-on reset is done

7 R UNCORR_ERR double-bit error of non-volatile memory has been

detected; updated every memory readout; remains

set until the diagnostic condition disa ppears and a

power-on reset is done

6 R MAGNET_LOSS_DET magnet-loss detected; bit remains set until the

diagnostic condition disappears and a power-on

reset is done; enable magnet-loss detection for

entering diagnostic mode

5 R BROKEN_BOND_DET broken bond wire detected; bit remains set until the

diagnostic condition disappears and a power-on

reset is done

4 R CRC_BAD checksum error detected; updated every start-up

3to0 - - reserved

94h/- SIGNATURE 15 to 0 W SIGNATURE to enter command mode, write signature 16F4h

within tcmd(ent); for more details, see Section 13.3.3

96h/97h TESTCTRL0 15 to 12 - - reserved

11 W WRITE_EN write enable signal; set before writing to

non-volatile memory; defau lt: 0b

10 to 0 - - reserved

Product data sheet Rev. 1 — 16 July 2013 24 of 36

NXP Semiconductors KMA221

Programmable angle sensor

13.5.2 Non-volatile memory registers

The device includes several internal registers which are used for customization and

identification.

The initial signature allows read access to all areas but only write access to customer

registers. Write accesses to reserved areas are ignored. Since these registers are

implemented as non-volatile memory cells, writing to the registers needs a specific time

tprog after each write access to complete.

As there is no check for th e pr og ra m m ing ti me, make sure that no other accesses to the

non-volatile mem o ry ar e m ade du rin g the pr og r amm i ng cycle . Do no t ad dr es s

the non-volatile memory during the time tprog.

Note: Before data can be stored in the non-volat ile memory, switch on the internal charge

pump for the progr amming duration by setting register CTRL1, bit 1 1 CP_CLOCK_ EN and

Table 20. Non-v olatile memory registers

Address Command

write/read Register Bit Description Default

MSB/LSB

0h -/01h reserved - addresses are reserved for calibration purposes [1]

1h -/03h

2h -/05h

3h -/07h

4h -/09h

5h -/0Bh

6h -/0Dh

7h -/0Fh

8h 10h/11h ZERO_ANGLE 15 to 0 mechanical zero degree position; see Table 21 00h/00h

9h 12h/13h ANG_RNG_MULT_MSB 15 to 6 CLAMP_SW_ANGLE; when the measured angle

is bigger than CLAMP_SW_ANGLE the output

switches to CLAMP_LO for a positive slope;

see Table 26

FFh/C1h

5 to 0 ANG_RNG_MULT_MSB; most significant bits of

the angular range multiplicator; see Table 24

Ah 14h/15h ANG_RNG_MULT_LSB 15 and 14 DIAGNOSTIC_LEVEL; diagnostic level behavior

of the analog output; see Table 25

00b — active LOW (in lower diagnostic range)

with driver strength of the analog output

01b — active HIGH (in upper diagnostic range)

with driver strength of the analog output

10b — reserved

11b — reserved

04h/00h

13 SLOPE_DIR; slope of analog output

0b — rising (not inverted)

1b — falling (inverted)

12 to 0 ANG_RNG_MULT_LSB; least significant bits of

the angular range multiplicator

Product data sheet Rev. 1 — 16 July 2013 25 of 36

NXP Semiconductors KMA221

Programmable angle sensor

[1] Variable and individual for each device.

[2] Undefined; write as zero for default.

Mechanical an gu la r rang e 00 0 0h = 0 to FFFFh = 1801 LSB.

Examples:

•Mechanical zero angle 0= 0000h

•Mechanical zero angle 10=0E38h

•Mechanical zero angle 45= 4000h

[1] Undefined; write as zero for default; returns any value when read.

Values 0 to 255 are reserved. It is not permitted to use such values.

Examples:

•100 %VDD = 5120 (reserved)

•10 %VDD =512

•5%V

DD =256

Bh 16h/17h CLAMP_LO 15 0b — reserved 01h/00h

14 and 13 undefined[2]

12 to 0 lower clamping level; see Table 22

Ch 18h/19h CLAMP_HI 15 to 13 undefined[2] 13h/00h

12 to 0 upper clamping level; see Table 23

Dh 1Ah/1Bh ID_LO 15 to 0 lower 16 bits of identification code 00h/00h

Eh 1Ch/1Dh ID_HI 15 to 0 upper 16 bits of identification code 00h/00h

Fh 1Eh/1Fh CTRL_C UST 15 LOCK; irreversible write protection of no n - vo l at il e

memory

1b — enabled

00h/[1]

14 to 8 MAGNET_LOSS; magnet-loss detection

00h — disabled

49h — enabled

7 to 0 CRC; checksum (see Section 13.4)

Table 20. Non-v olatile memory registers …continued

Address Command

write/read Register Bit Description Default

MSB/LSB

Table 21. ZERO_ANGLE - mechanical zero degree position (address 8h) bit allocation

Data format: unsigned fixed point; resolution: 2



16.

Bit 15 14 13 12 11 10 9876543210

Value 212223242526272829210 211 212 213 214 215 216

Table 22. CLAMP_LO - lower clamping level (address Bh) bit allocation

Data format: unsigned integer (DAC values 256 to 4864); resolution: 20.

Bit 15 14 13 12 11 10 9876543210

Value 0 U[1] U[1] 212 211 210 29282726252423222120

Product data sheet Rev. 1 — 16 July 2013 26 of 36

NXP Semiconductors KMA221

Programmable angle sensor

[1] Undefined; write as zero for default; returns any value when read.

Values 4865 to 5120 are reserved. It is not permitted to use such values.

Examples:

•100 %VDD = 5120 (reserved)

•95 %VDD = 4864

•90 %VDD = 4608

(10)

Examples:

•

[1] Variable; depending on the setting of diagnostic level and slope of analog output.

(11)

Mechanical an gu la r rang e 00 0 0h = 0 to 3FFh = 1801LSB.

(12)

If the magnetic field angle is larger than the CLAMP_SW_ANGLE, the output switches to

CLAMP_LO for a positive slope. Program the value of CLAM P_SW_ANGLE, which can

be calculated from other non-volatile memory constants.

Table 23. CLAMP_HI - upper clamping level (address Ch) bit allocation

Data format: unsigned integer (DAC values 256 to 4864); resolution: 20.

Bit 15 14 13 12 11 10 9876543210

Value U[1] U[1] U[1] 212 211 210 29282726252423222120

Table 24. ANG_RNG_MULT_ MSB - most significant bits of angular range multiplicator (address 9h) bit allocation

Data format: unsigned fixed point; resolution: 2



Bit 15 14 13 12 11 10 9876543210

Value CLAMP_SW_ANGLE 242322212021

ANG_RNG_MULT CLAMP_HI CLAMP_LO–

8192

-------------------------------------------------------------------180

ANGULAR_RANGE

---------------------------------------------------

=

ANG_RNG_MULT 4864 256–

8192

---------------------------180

180

-----------

0.5625==

ANG_RNG_MULT 4864 256–

8192

---------------------------180

90

-----------

1.125==

Table 25. ANG_RNG_MULT_LSB - least significant bits of angular range multiplica tor (address Ah) b it allo cation

Data format: unsigned fixed point; resolution: 2



14.

Bit 15 14 13 12 11 10 9876543210

Value V[1] V[1] 2223242526272829210 211 212 213 214

ANG_RNG_MULT CLAMP_HI CLAMP_LO–

8192

-------------------------------------------------------------------180

ANGULAR_RANGE

---------------------------------------------------

=

Table 26. CLAMP_SW_ANGLE - clamp switch angle (address 9h) bit allocation

Data format: unsigned fixed point; resolution: 2



10.

Bit 15 14 13 12 11 10 9876543210

Value 212223242526272829210 ANG_RNG_MULT_MSB

CLAMP_SW_ANGLE 1

---1CLAMP_HI CLAMP_LO–

8192

-------------------------------------------------------------------- 1

ANG_RNG_MULT

-----------------------------------------------

+





=

Product data sheet Rev. 1 — 16 July 2013 27 of 36

NXP Semiconductors KMA221

Programmable angle sensor

14. Electromagnetic compatibility

EMC is verified in an independent and certified test laboratory.

14.1 Emission (CISPR 25)

Tests according to CISPR 25 were fulfilled.

14.1.1 Conducted radio disturbance

Test of the device according to CISPR 25, third edition (2008-03), Chapter 6.2.

Classification level: 5.

14.1.2 Radiated radio disturbance

Test of the device according to CISPR 25, third edition (2008-03), Chapter 6.4.

Classification level: 5 (without addition of 6 dB in FM band).

14.2 Radiated disturbances (ISO 11452-1 third edition (2005-02),

ISO 11452-2, ISO 11452-4 and ISO 11452-5)

The common understanding of the requested function is that an effect is tolerated as

described in Table 27 during the disturbance. The reachable values are setup-dependent

and differ from the final application.

14.2.1 Absorber lined shielded enclosure

Tests according to ISO 11452-2, second edition (2004-11), were fulfilled.

Test level: 200 V/m; ex te nd ed up to 4 GHz.

State: A.

14.2.2 Bulk-current injection

Tests according to ISO 11452-4, third edition (2005-04), were fulfilled.

Test level: 200 mA.

State: A.

14.2.3 Strip line

Tests according to ISO 11452-5, second edition (2002-04), were fulfilled.

Test level: 200 V/m; extended up to 1 GHz.

State: A.

Table 27. Fa ilure condition for radiat ed disturbances

Parameter Comment Min Max Unit

Variation of output signal in analog

output mode value meas ure d rel at i ve to the

output at test start -0.9 %VDD

Product data sheet Rev. 1 — 16 July 2013 28 of 36

NXP Semiconductors KMA221

Programmable angle sensor

14.2.4 Immunity against mobile phones

Tests according to ISO 11452-2, second edition (2004-11), were fulfilled.

State: A.

Definition of Global System for Mobile Communications (GSM) signal:

•Pulse modulation: per GSM specification (217 Hz; 12.5 % duty cycle)

•Modulation grade: 60 dB

•Sweep: linear 800 MHz to 3 GHz (duration 10 s at 890 MHz, 940 MHz and 1.8 GHz

band)

•Antenna polarization: vertical, horizontal

•Field strength: 200 V/m during on-time [calibration in Continuous Wave (CW)]

In deviation of ISO 11452-2, a GSM signal instead of an AM signal was used.

14.3 Electrical transient transmission by capacitive coupling [ISO 7637-3,

second edition (2007-07)]

The common understanding of the requested function is that an effect is tolerated as

described in Table 28 during the disturbance.

Tests according to ISO 7637-3 were fulfilled.

Te st level: IV (for 12 V electrical system).

Classification level: B for pulse Fast a, B for pulse Fast b.

15. ElectroStatic Discharge (ESD)

15.1 Human body model (AEC-Q100-002)

The KMA221 is protected up to 8 kV, according to the human body model at 100 pF and

1.5 k. This protection is ensured at all pins.

Classification level: H3B.

Table 28. Fa ilure condition for electrical transient transmission

Parameter Comment Min Max Unit

Variation of output signal in analog

output mode value measured relative to the

output at test start -0.9 %VDD

Product data sheet Rev. 1 — 16 July 2013 29 of 36

NXP Semiconductors KMA221

Programmable angle sensor

15.2 Human metal model (ANSI/ESD SP5.6-2009)

The KMA221 is protected up to 8 kV, according to the human metal model at 150 pF and

330  inside the ESD gun. This test utilizes waveforms of the IEC 61000-4-2 standard on

component level. Apply the contact discharge in an unsupplied state at pins OUT/DATA

and VDD referred to GND which is conn ec te d dir ec tly to th e gr ou nd pla ne .

Test setup: A.

Test level: 5.

15.3 Machine model (AEC-Q100-003)

The KMA221 is protected up to 400 V, according to the machine model. This protection is

ensured at all pins.

Classification level: M4.

All pins have latch-up protection.

15.4 Charged-device model (AEC-Q100-011)

The KMA221 is protected up to 750 V, according to the ch ar ge d- device model. This

protection is ensured at all pins.

Classification level: C4.

16. Application information

(1) Power-loss detection is only possible with a load resistance within the specified range connected to

the supply or ground line.

(2) The load capacitance between ground and analog output can be used to improve the

electromagnetic immunity of the device. A blocking capacitance to suppress noise on the supply

line of the device is integrated into the package and thus not required externally.

Fig 18. Application diagram of KMA221

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Product data sheet Rev. 1 — 16 July 2013 30 of 36

NXP Semiconductors KMA221

Programmable angle sensor

17. Test information

17.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q100 Rev-G - Failure mechanism based stress test qualification for

integrated circuits, and is suitable for use in automotive app licat ion s.

18. Marking

A: leading letters of type name

B: batch number

C: date code

X: product manufacturing code; m for manufacturing Manila [Assembly Plant Philippines (APP)]

YYY: day of year

Z: year of production (last figure)

D: additional marking

C: capacitor type (T: TDK)

B: burn-in information (0: without burn-in; 1: with burn-in)

V: IC version (1, 2, 3, ...)

S: development status (X: development; C: validated; blank: released)

Fig 19. Marking

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111111

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Product data sheet Rev. 1 — 16 July 2013 31 of 36

NXP Semiconductors KMA221

Programmable angle sensor

19. Package information

19.1 Reading point position

19.2 Terminals

Lead frame material: CuZr with 99.9 % Cu and 0.1 % Zr.

Dimensions in mm

Fig 20. Reading point posi tion

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Product data sheet Rev. 1 — 16 July 2013 32 of 36

NXP Semiconductors KMA221

Programmable angle sensor

20. Package outline

Fig 21. Package outline SOT1 188-1 (SIL4)

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1188-1 - - -

- - -

sot1188-1_po

Unit

max

nom

min

2.05

1.95

1.85

0.85

0.80

0.75

11.15

11.00

10.85

10.62

10.47

10.32

7.81

7.5

7.4

7.3

7.9

7.8

7.7

1.8 7.9

Dimensions

Note

1. Gate area, up to 0.2 mm protrusion possible at both sides.

2. Terminal and plastic uncontrolled in this area.

3. Burr not included.

4. Measured at the cutting edge of the fin radius.

5. Measured along the straight edge of the package above note 1.

6. Alignment area, up to 1.5 mm long rim break outs can reduce E1 dimension.

SIL4: plastic, single in-line package SOT1188-1

(3)

0.30

0.27

0.24

1D2(1) E

1.7

1.6

1.5

2.05

1.95

1.85

0.2 0.8

0.2

sqzw

D5(4, ref)

0.27

D6(ref)

12.93

E1(5,6)

8.05

8.00

7.95

E2eH

20.7

20.5

20.3

HE1

5.85

5.80

5.75

HE2

6.20 4.05

4.00

3.95

0.95

0.90

0.85

1.05

1.00

0.95

L(ref) pp

0.95

0.90

0.85

0 5 10 mm

scale

12-05-14

12-08-20

alignment

area(6)

gate area(1)

(L)

(4x)

(3x)

(2)

(1)

(2)

p(D5)

(D6 )

HE1

HE2

pin 1 index

burr side

Product data sheet Rev. 1 — 16 July 2013 33 of 36

NXP Semiconductors KMA221

Programmable angle sensor

21. Handling information

22. Solderability information

The solderability qualification is according to AEC-Q100 Rev-G. Recommended soldering

process for leaded devices is wave soldering. The maximum soldering temperature is

260 C for maximum 5 s. Device terminals are compatible with laser and electrical

welding.

23. Revision history

Dimensions in mm

(1) No bending allowed.

(2) Plastic body and interface plastic body - leads: application of bending forces not allowed.

Fig 22. Bending recommendation

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Table 29. Revision history

Document ID Release date Data sh eet status Change notice Supersedes

KMA221 v.1 20130716 Product data sheet - -

Product data sheet Rev. 1 — 16 July 2013 34 of 36

NXP Semiconductors KMA221

Programmable angle sensor

24. Legal information

24.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

24.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond tho se described in the

Product data sheet.

24.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. Unless ot herwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, lif e-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications an d ther efo re su ch inclusi on a nd/or use is at the cu stome r's own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product develop ment.

Preliminary [short] dat a sheet Qualification T his document contains data fro m the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 16 July 2013 35 of 36

NXP Semiconductors KMA221

Programmable angle sensor

No offer to sell or license — Nothing in this document may be interpret ed or

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

24.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

25. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors KMA221

Programmable angle sensor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 16 July 2013

Document identifier: KMA221

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

26. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3

5 Functional description . . . . . . . . . . . . . . . . . . . 4

5.1 Angular measurement directions . . . . . . . . . . . 4

6 Analog output. . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Diagnostic features . . . . . . . . . . . . . . . . . . . . . . 6

7.1 CRC and EDC supervision. . . . . . . . . . . . . . . . 6

7.2 Magnet-loss detection . . . . . . . . . . . . . . . . . . . 6

7.3 Power-loss detection . . . . . . . . . . . . . . . . . . . . 6

7.4 Broken bond wire detection . . . . . . . . . . . . . . . 7

7.5 Low supply voltage detection and overvoltage

protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Recommended operating conditions. . . . . . . . 9

10 Thermal characteristics . . . . . . . . . . . . . . . . . . 9

11 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Definition of errors. . . . . . . . . . . . . . . . . . . . . . 13

12.1 General. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.2 Hysteresis error . . . . . . . . . . . . . . . . . . . . . . . 13

12.3 Linearity error . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.4 Microlinearity error . . . . . . . . . . . . . . . . . . . . . 14

12.5 Temperature drift error . . . . . . . . . . . . . . . . . . 15

12.6 Angular error. . . . . . . . . . . . . . . . . . . . . . . . . . 15

13 Programming . . . . . . . . . . . . . . . . . . . . . . . . . . 17

13.1 General description . . . . . . . . . . . . . . . . . . . . 17

13.2 Timing characteristics. . . . . . . . . . . . . . . . . . . 18

13.3 Sending and receiving data . . . . . . . . . . . . . . 18

13.3.1 Write access. . . . . . . . . . . . . . . . . . . . . . . . . . 19

13.3.2 Read access. . . . . . . . . . . . . . . . . . . . . . . . . . 20

13.3.3 Entering the command mode . . . . . . . . . . . . . 21

13.4 Cyclic redundancy check . . . . . . . . . . . . . . . . 21

13.4.1 Software example in C . . . . . . . . . . . . . . . . . . 22

13.5 Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

13.5.1 Command registers . . . . . . . . . . . . . . . . . . . . 23

13.5.2 Non-volatile memory registers . . . . . . . . . . . . 24

14 Electromagnetic compatibility . . . . . . . . . . . . 27

14.1 Emission (CISPR 25) . . . . . . . . . . . . . . . . . . . 27

14.1.1 Conducted radio disturbance . . . . . . . . . . . . . 27

14.1.2 Radiated radio disturbance. . . . . . . . . . . . . . . 27

14.2 Radiated disturbances (ISO 11452-1 third

edition (2005-02), ISO 11452-2, ISO 11452-4

and ISO 11452-5). . . . . . . . . . . . . . . . . . . . . . 27

14.2.1 Abso rber lined shielded enclosure. . . . . . . . . 27

14.2.2 Bulk-current injection . . . . . . . . . . . . . . . . . . . 27

14.2.3 Strip line. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

14.2.4 Immunity against mobile phones . . . . . . . . . . 28

14.3 Electrical transient transmission by capacitive

coupling [ISO 7637-3, second edition

(2007-07)] . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

15 ElectroStatic Discharge (ESD). . . . . . . . . . . . 28

15.1 Human body model (AEC-Q100-002) . . . . . . 28

15.2 Human metal model (ANSI/ESD SP5.6-2009) 29

15.3 Machine model (AEC-Q100-003). . . . . . . . . . 29

15.4 Charged-device model (AEC-Q100-011). . . . 29

16 Application information . . . . . . . . . . . . . . . . . 29

17 Test information . . . . . . . . . . . . . . . . . . . . . . . 30

17.1 Quality information. . . . . . . . . . . . . . . . . . . . . 30

18 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

19 Package information. . . . . . . . . . . . . . . . . . . . 31

19.1 Reading point position . . . . . . . . . . . . . . . . . . 31

19.2 Terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

20 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 32

21 Handling information . . . . . . . . . . . . . . . . . . . 33

22 Solderability information . . . . . . . . . . . . . . . . 33

23 Revision history . . . . . . . . . . . . . . . . . . . . . . . 33

24 Legal information . . . . . . . . . . . . . . . . . . . . . . 34

24.1 Data sheet status. . . . . . . . . . . . . . . . . . . . . . 34

24.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

24.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 34

24.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 35

25 Contact information . . . . . . . . . . . . . . . . . . . . 35

26 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36